公开(公告)号：US20160163834A1

公开(公告)日：2016-06-09

申请号：US15009843

申请日：2016-01-29

申请人： Jae-Hwan LEE ,  Sangsu KIM ,  Changjae YANG

发明人： Jae-Hwan LEE ,  Sangsu KIM ,  Changjae YANG

IPC分类号： H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L21/02

CPC分类号： H01L29/66795 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/785

摘要： A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.

公开(公告)号：US07993565B2

公开(公告)日：2011-08-09

申请号：US12411309

申请日：2009-03-25

申请人： Jae Hak Kim ,  Joong Won Han ,  Jae Hwan Lee ,  Do Young Lee ,  Jin Hyun Kim

发明人： Jae Hak Kim ,  Joong Won Han ,  Jae Hwan Lee ,  Do Young Lee ,  Jin Hyun Kim

IPC分类号： B29C70/44 ,  B29C51/10 ,  B32B31/00

CPC分类号： B29C70/44 ,  B29C53/025 ,  B29C2791/006 ,  B29L2031/003 ,  Y10T156/1028

摘要： Disclosed is a folding and shape-forming apparatus for a prepreg which includes a vacuum chamber which can generate a vacuum pressure in the inside thereof, an expanding portion disposed inside the vacuum chamber, provided with a prepreg thereon, and expanding because of the vacuum pressure inside the vacuum chamber, a heating portion disposed inside the vacuum chamber for heating the prepreg, a mandrel loaded at a portion of an upper surface of the prepreg, a first pressing portion which is brought into contact with an upper surface of the mandrel to press the mandrel, and a second pressing portion which simultaneously presses both another portion of the upper surface of the prepreg and the expanding portion.

摘要翻译： 公开了一种用于预浸料的折叠和成形装置，其包括可在其内部产生真空压力的真空室，设置在真空室内的膨胀部分，在其上设置有预浸料，并且由于真空压力而膨胀 在真空室内部，设置在真空室内用于加热预浸料的加热部分，装在预浸料坯上表面部分的芯棒，与心轴上表面接触的第一按压部分 心轴以及同时按压预浸料坯的上表面的另一部分和膨胀部的第二挤压部。

公开(公告)号：US20070004533A1

公开(公告)日：2007-01-04

申请号：US11171292

申请日：2005-07-01

申请人： Jae-Young Lee ,  Jae-Guen Lee ,  Jae-Hwan Lee

发明人： Jae-Young Lee ,  Jae-Guen Lee ,  Jae-Hwan Lee

IPC分类号： A63B53/00

CPC分类号： A63B53/02 ,  A63B53/0487 ,  A63B60/00 ,  A63B60/52 ,  A63B2053/025 ,  A63B2053/026 ,  A63B2053/0416 ,  A63B2053/0441

摘要： A putter assembly is disclosed. The putter assembly has a loft angle between a face of a head of the putter and a lie angle between a longitudinal horizontal center line and a shaft, and includes loft and lie angle adjustors pivotally installed in a connection neck for connecting the head and the shaft. The loft angle adjustor includes a hinge channel depressed in the upper side of the head and a hinge arm inserted into the hinge channel. The hinge arm and the hinge channel are connected by a bolt penetrating boltholes formed in the hinge arm and the hinge channel to freely change the loft angle. The lie angle adjustor includes an upper neck, and a frictional member formed between ends of the lower and upper neck. The upper and lower necks are coupled with each other via an adjusting bolt fixed at a freely changed lie angle.

摘要翻译： 公开了推杆组件。 推杆组件在推杆头部的表面与纵向水平中心线和轴之间的倾角之间具有倾斜角，并且包括枢转地安装在连接颈部中的杆和角度调节器，用于连接头部和轴部 。 顶角调节器包括在头部的上侧凹陷的铰链通道和插入铰链通道的铰链臂。 铰链臂和铰链通道通过在铰链臂和铰链通道中形成的螺栓穿透螺栓连接，以自由地改变顶角。 躺角调节器包括上颈部和形成在下颈部和上颈部的端部之间的摩擦部件。 上颈部和下颈部通过固定在自由变化的角度的调节螺栓彼此连接。

公开(公告)号：US20070004525A1

公开(公告)日：2007-01-04

申请号：US11171291

申请日：2005-07-01

申请人： Jae-Young Lee ,  Jae-Guen Lee ,  Jae-Hwan Lee

发明人： Jae-Young Lee ,  Jae-Guen Lee ,  Jae-Hwan Lee

IPC分类号： A63B53/06

CPC分类号： A63B53/0466 ,  A63B53/047 ,  A63B53/0487 ,  A63B60/52 ,  A63B69/3685 ,  A63B2053/0416 ,  A63B2053/0433 ,  A63B2053/0437 ,  A63B2053/0441 ,  A63B2053/0445 ,  A63B2060/004 ,  A63B2225/01

摘要： A head assembly of a golf club includes at least one various-shaped aiming mark formed in a centerline aligned with an impact line in a face of a head of a driver, an iron, or putter, or at the position opposite to the aiming mark about the centerline. Since the golfer aims when striking the golf ball, the habit of continuously keeping the golfer's aim to the head of a golf club is accustomed to the golfer such that the golfer naturally habituates the careful swing of a golf club.

摘要翻译： 高尔夫球杆的头部组件包括至少一个各种形状的瞄准标记，形成在与驾驶员，铁杆或推杆的头部的面中的撞击线对准的中心线处或与瞄准标记相对的位置处形成的中心线 关于中心线。 由于高尔夫球手的目标是打高尔夫球时，不断将高尔夫球手的目标瞄准高尔夫球杆头的习惯就习惯于高尔夫球手，使高尔夫球手自然地习惯于高尔夫球杆的小心摆动。

公开(公告)号：US20050221824A1

公开(公告)日：2005-10-06

申请号：US11069050

申请日：2005-03-02

申请人： Jae-Hwan Lee ,  Ki-Ho Cho ,  Dong-Hee Lee ,  Hwa-Jin Cha

发明人： Jae-Hwan Lee ,  Ki-Ho Cho ,  Dong-Hee Lee ,  Hwa-Jin Cha

IPC分类号： H04B7/26 ,  H04W36/14 ,  H04Q7/20

CPC分类号： H04W36/0066 ,  Y02D70/1224 ,  Y02D70/1242

摘要： Disclosed is a method for controlling activation/deactivation of two kinds of operation modes of an MMMB mobile terminal during handover between different types of systems. To control the activation/deactivation, a system controller instructs the mobile terminal to activate/deactivate the operation modes or provides activation/deactivation conditions to the mobile terminal. In particular, when the mobile terminal in communication is situated in a border cell neighboring a target system, the mobile terminal activates target system-related modules and then performs handover into the target system according to predetermined conditions after the passage of a predetermined time period. Such a handover method minimizes time required for performing handover, prevents deterioration of call quality during the handover, and saves power consumption of the mobile terminal.

摘要翻译： 公开了一种在不同类型的系统之间切换期间控制MMMB移动终端的两种操作模式的激活/去激活的方法。 为了控制激活/去激活，系统控制器指示移动终端激活/去激活操作模式或向移动终端提供激活/去激活条件。 特别地，当通信中的移动终端位于与目标系统相邻的边界小区中时，移动终端激活目标系统相关模块，然后根据预定时间段之后的预定条件执行到目标系统的切换。 这种切换方法使得执行切换所需的时间最小化，防止切换期间的呼叫质量恶化，并且节省了移动终端的功耗。

公开(公告)号：US20160329414A1

公开(公告)日：2016-11-10

申请号：US15093145

申请日：2016-04-07

申请人： Jae-Hwan LEE ,  Sangsu Kim ,  Sanghyuk Hong ,  Seung Mo Ha

发明人： Jae-Hwan LEE ,  Sangsu Kim ,  Sanghyuk Hong ,  Seung Mo Ha

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L29/40

CPC分类号： H01L29/66795 ,  H01L21/823821 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/7851

摘要： A method of fabricating a semiconductor device includes forming an active pattern protruding from a substrate, forming a liner layer on the active pattern, forming a sacrificial gate pattern on the liner layer and crossing the active pattern, forming source/drain regions on the active pattern and at both sides of the sacrificial gate pattern, forming an interlayer insulating layer to cover the source/drain regions, forming capping insulating patterns on the interlayer insulating layer to expose the sacrificial gate pattern, and removing the sacrificial gate pattern and the liner layer by an etching process using the capping insulating patterns as an etch mask to form a gap region exposing the active pattern. The active pattern includes a material having a lattice constant greater than a lattice constant of the substrate, and the capping insulating patterns include a material having an etch selectivity with respect to the liner layer.

摘要翻译： 制造半导体器件的方法包括形成从衬底突出的有源图案，在有源图案上形成衬垫层，在衬垫层上形成牺牲栅极图案并与有源图案交叉，在活性图案上形成源极/漏极区域 在牺牲栅极图案的两侧形成层间绝缘层以覆盖源极/漏极区域，在层间绝缘层上形成覆盖绝缘图案以暴露牺牲栅极图案，以及通过以下步骤去除牺牲栅极图案和衬底层： 使用封盖绝缘图案作为蚀刻掩模的蚀刻工艺来形成暴露活性图案的间隙区域。 活性图案包括晶格常数大于衬底的晶格常数的材料，并且封盖绝缘图案包括相对于衬垫层具有蚀刻选择性的材料。

公开(公告)号：US09425198B2

公开(公告)日：2016-08-23

申请号：US14289672

申请日：2014-05-29

申请人： Dong-Kyu Lee ,  Jae-Hwan Lee ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jung-Dal Choi

发明人： Dong-Kyu Lee ,  Jae-Hwan Lee ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jung-Dal Choi

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/06

CPC分类号： H01L27/0928 ,  H01L21/823807 ,  H01L21/823892 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/20

摘要： A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.

摘要翻译： 半导体器件包括衬底，衬底上的应变松弛缓冲层，应变松弛缓冲层中的至少一个阱，应变松弛缓冲层上的第一沟道层和阱上的第二沟道层。 构成第一阱的材料的晶格常数小于构成应变弛缓缓冲层的材料的晶格常数，但构成第二阱的材料的晶格常数大于构成应变弛豫缓冲层的材料的晶格常数 缓冲层。

公开(公告)号：US20150202497A1

公开(公告)日：2015-07-23

申请号：US14421121

申请日：2013-03-26

申请人： Jae Young Lee ,  Jae Guen Lee ,  Jae Hwan Lee

发明人： Jae Young Lee ,  Jae Guen Lee ,  Jae Hwan Lee

IPC分类号： A63B37/00

CPC分类号： A63B37/002 ,  A63B37/0006 ,  A63B37/0017 ,  A63B37/0022 ,  A63B43/008 ,  A63B45/00 ,  A63B2225/01 ,  G09F23/0066

摘要： The present invention relates to a golf ball including one or more non-dimple areas that do not have dimples are provided in relation to a dimple area having a plurality of dimples arranged on the entire outer surface of the golf ball. The non-dimple areas are two non-dimple areas which are positioned to face opposite directions from each other on an axial central line that passes through an axial center of the golf ball, and which are surrounded by other dimples, and recessed circular arcs of dimples in the dimple area are distributed with variable diameter sizes so as to compensate for the whole volume of the golf ball which is reduced by the provision of the non-dimple areas.

摘要翻译： 本发明涉及一种高尔夫球，其包括一个或多个不具有凹坑的非凹坑区域，其相对于具有布置在高尔夫球的整个外表面上的多个凹坑的凹坑区域设置。 非凹坑区域是两个非凹坑区域，它们在通过高尔夫球的轴向中心并且被其它凹坑包围的轴向中心线上彼此相对的方向定位，并且凹陷的圆弧 在凹坑区域中的凹坑以可变的直径尺寸分布，以补偿通过提供非凹坑区域减少的高尔夫球的整个体积。

公开(公告)号：US20150137263A1

公开(公告)日：2015-05-21

申请号：US14469615

申请日：2014-08-27

申请人： Jae-Hwan LEE ,  Sangsu KIM ,  Changjae YANG

发明人： Jae-Hwan LEE ,  Sangsu KIM ,  Changjae YANG

IPC分类号： H01L29/06 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/785

摘要： A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.

摘要翻译： 场效应晶体管包括翅片结构，其具有从衬底突出的侧壁和衬底上的器件隔离结构，所述器件隔离结构限定鳍结构的侧壁，其中鳍结构包括布置在 所述衬底和布置在所述缓冲半导体图案上的沟道图案，其中所述缓冲半导体图案具有与所述沟道图案不同的晶格常数，并且其中所述器件隔离结构包括间隙填充绝缘层，并且包括氧化阻挡层 设置在缓冲半导体图案和间隙填充绝缘层之间的图案。

公开(公告)号：US20140361378A1

公开(公告)日：2014-12-11

申请号：US14289672

申请日：2014-05-29

申请人： DONG-KYU LEE ,  JAE-HWAN LEE ,  TAE-YONG KWON ,  SANG-SU KIM ,  JUNG-DAL CHOI

发明人： DONG-KYU LEE ,  JAE-HWAN LEE ,  TAE-YONG KWON ,  SANG-SU KIM ,  JUNG-DAL CHOI

IPC分类号： H01L27/092

CPC分类号： H01L27/0928 ,  H01L21/823807 ,  H01L21/823892 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/20

摘要： A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.

摘要翻译： 半导体器件包括衬底，衬底上的应变松弛缓冲层，应变松弛缓冲层中的至少一个阱，应变松弛缓冲层上的第一沟道层和阱上的第二沟道层。 构成第一阱的材料的晶格常数小于构成应变弛缓缓冲层的材料的晶格常数，但构成第二阱的材料的晶格常数大于构成应变弛豫缓冲层的材料的晶格常数 缓冲层。