公开(公告)号：US08361177B2

公开(公告)日：2013-01-29

申请号：US12333170

申请日：2008-12-11

申请人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Park ,  Jea Gun Park ,  Yong Kuk Kim

发明人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Park ,  Jea Gun Park ,  Yong Kuk Kim

IPC分类号： B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  C09K13/00 ,  H01L21/302 ,  C09G1/02

CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C01P2004/52 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/22 ,  C09G1/02 ,  C09K3/1463

摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

摘要翻译： 公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。 更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（ 设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光基板的方法。

公开(公告)号：US20090133336A1

公开(公告)日：2009-05-28

申请号：US12333170

申请日：2008-12-11

申请人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Paik ,  Jea Gun Park ,  Yong Kuk Kim

发明人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Paik ,  Jea Gun Park ,  Yong Kuk Kim

IPC分类号： C09G1/02 ,  C09K3/14

CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C01P2004/52 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/22 ,  C09G1/02 ,  C09K3/1463

摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

公开(公告)号：US20130020976A1

公开(公告)日：2013-01-24

申请号：US13551388

申请日：2012-07-17

申请人： Jae Hyun JEON

发明人： Jae Hyun JEON

IPC分类号： H02P1/04

CPC分类号： H02M5/00 ,  H02M7/49

摘要： Provided is an apparatus and method for controlling medium voltage inverter, whereby a frequency outputted by the medium voltage inverter is fixed, in a case an instantaneous power interrupt occurs while the medium voltage inverter drives a motor, and a voltage level of an AC power generated by the medium voltage inverter is reduced and outputted in response to a predetermined deceleration slope to control the medium voltage inverter.

摘要翻译： 提供一种用于控制中压逆变器的装置和方法，由此中压逆变器输出的频率是固定的，在中压变频器驱动电动机时发生瞬时电力中断并产生交流电的电压电平 通过中压逆变器响应于预定的减速斜率而减小输出，以控制中压逆变器。

公开(公告)号：US08345455B2

公开(公告)日：2013-01-01

申请号：US12710295

申请日：2010-02-22

申请人： Jae Hyun Jeon

发明人： Jae Hyun Jeon

IPC分类号： H02M7/48 ,  H02M7/68 ,  H02M7/5387

CPC分类号： H02M7/49

摘要： The present invention relates to a control device and a control method of a high voltage inverter capable of automatically and accurately setting up neutral point information at a master controller and a plurality of cell controllers of the high voltage inverter, wherein a master controller determines information of neutral point set up to itself and performs a communication with the cell controllers each disposed at each of a plurality of U phase unit cells, a plurality of V phase unit cells and a plurality of W phase unit cells to determine the neutral point information preset on the cell controllers and to detect a cell controller set up with neutral point information different from that of the master controller, and to correct the neutral point information of the detected relevant cell controller using the neutral point information set up in the master controller, thereby operating the high voltage inverter.

摘要翻译： 本发明涉及能够在主控制器和高压逆变器的多个单元控制器上自动准确地建立中性点信息的高压逆变器的控制装置和控制方法，其中主控制器确定 中立点设定为自身并且执行与多个U相单元，多个V相单元和多个W相单元中的每一个配置的单元控制器的通信，以确定预设在 单元控制器，并且检测设置有与主控制器的中性点信息不同的中性点信息的单元控制器，并且使用在主控制器中设置的中性点信息来校正检测到的相关单元控制器的中性点信息，由此操作 高压变频器。

公开(公告)号：US20090100765A1

公开(公告)日：2009-04-23

申请号：US12333179

申请日：2008-12-11

申请人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Paik ,  Jea Gun Park ,  Yong Kuk Kim

发明人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Un Gyu Paik ,  Jea Gun Park ,  Yong Kuk Kim

IPC分类号： C09K3/14

CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C01P2004/52 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/22 ,  C09G1/02 ,  C09K3/1463

摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

摘要翻译： 公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。 更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（ 设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光衬底的方法。

公开(公告)号：US09093892B2

公开(公告)日：2015-07-28

申请号：US13551388

申请日：2012-07-17

申请人： Jae Hyun Jeon

发明人： Jae Hyun Jeon

IPC分类号： H02K17/32 ,  H02M5/00

CPC分类号： H02M5/00 ,  H02M7/49

摘要： Provided is an apparatus and method for controlling medium voltage inverter, whereby a frequency outputted by the medium voltage inverter is fixed, in a case an instantaneous power interrupt occurs while the medium voltage inverter drives a motor, and a voltage level of an AC power generated by the medium voltage inverter is reduced and outputted in response to a predetermined deceleration slope to control the medium voltage inverter.

摘要翻译： 提供一种用于控制中压逆变器的装置和方法，由此中压逆变器输出的频率是固定的，在中压变频器驱动电动机时发生瞬时电力中断并产生交流电的电压电平 通过中压逆变器响应于预定的减速斜率而减小输出，以控制中压逆变器。

公开(公告)号：US20130076285A1

公开(公告)日：2013-03-28

申请号：US13615606

申请日：2012-09-14

申请人： JUNG MUK CHOI ,  SEUNG HO NA ,  JAE HYUN JEON ,  SUNG GUK AHN

发明人： JUNG MUK CHOI ,  SEUNG HO NA ,  JAE HYUN JEON ,  SUNG GUK AHN

IPC分类号： H02P23/00

CPC分类号： H02P29/022 ,  H02M1/00 ,  H02M1/36 ,  H02M7/062 ,  H02M7/49 ,  H02P29/032

摘要： Provided are a method for compensating instantaneous power failure in medium voltage inverter and a medium voltage inverter system by using the same, the method for compensating instantaneous power failure in medium voltage inverter including a plurality of power cells supplying a phase voltage to a motor by being connected to the motor in series, the method including decreasing an output frequency of the plurality of power cells by as much as a predetermined value at a relevant point where an input voltage of the plurality of power cells is less than a reference value, decreasing the output frequency at a predetermined deceleration gradient, and maintaining the output frequency during restoration of input voltage as long as a predetermined time, in a case the input voltage is restored.

摘要翻译： 提供一种用于补偿中压逆变器和中压逆变器系统中的瞬时停电的方法，该方法用于补偿中压逆变器中的瞬时停电，包括通过以下方式将电压提供给电动机的多个电力单元： 所述方法包括：在所述多个功率单元的输入电压小于参考值的相关点将所述多个功率单元的输出频率降低多达预定值，减少所述多个功率单元的输出频率 输出频率以预定的减速梯度，并且在输入电压恢复的情况下，在输入电压恢复期间保持输出频率长达预定时间。

公开(公告)号：US08970159B2

公开(公告)日：2015-03-03

申请号：US13615606

申请日：2012-09-14

申请人： Jung Muk Choi ,  Seung Ho Na ,  Jae Hyun Jeon ,  Sung Guk Ahn

发明人： Jung Muk Choi ,  Seung Ho Na ,  Jae Hyun Jeon ,  Sung Guk Ahn

IPC分类号： H02P27/04 ,  H02P29/02 ,  H02M1/00

CPC分类号： H02P29/022 ,  H02M1/00 ,  H02M1/36 ,  H02M7/062 ,  H02M7/49 ,  H02P29/032

摘要： Provided are a method for compensating instantaneous power failure in medium voltage inverter and a medium voltage inverter system by using the same, the method for compensating instantaneous power failure in medium voltage inverter including a plurality of power cells supplying a phase voltage to a motor by being connected to the motor in series, the method including decreasing an output frequency of the plurality of power cells by as much as a predetermined value at a relevant point where an input voltage of the plurality of power cells is less than a reference value, decreasing the output frequency at a predetermined deceleration gradient, and maintaining the output frequency during restoration of input voltage as long as a predetermined time, in a case the input voltage is restored.

摘要翻译： 提供一种用于补偿中压逆变器和中压逆变器系统中的瞬时停电的方法，该方法用于补偿中压逆变器中的瞬时停电，包括通过以下方式将电压提供给电动机的多个电力单元： 所述方法包括：在所述多个功率单元的输入电压小于参考值的相关点将所述多个功率单元的输出频率降低多达预定值，减少所述多个功率单元的输出频率 输出频率以预定的减速梯度，并且在输入电压恢复的情况下，在输入电压恢复期间保持输出频率长达预定时间。

公开(公告)号：US20110050199A1

公开(公告)日：2011-03-03

申请号：US12710295

申请日：2010-02-22

申请人： Jae Hyun JEON

发明人： Jae Hyun JEON

IPC分类号： H02M1/00 ,  H01F38/38

CPC分类号： H02M7/49

摘要： The present invention relates to a control device and a control method of a high voltage inverter capable of automatically and accurately setting up neutral point information at a master controller and a plurality of cell controllers of the high voltage inverter, wherein a master controller determines information of neutral point set up to itself and performs a communication with the cell controllers each disposed at each of a plurality of U phase unit cells, a plurality of V phase unit cells and a plurality of W phase unit cells to determine the neutral point information preset on the cell controllers and to detect a cell controller set up with neutral point information different from that of the master controller, and to correct the neutral point information of the detected relevant cell controller using the neutral point information set up in the master controller, thereby operating the high voltage inverter.

摘要翻译： 本发明涉及能够在主控制器和高压逆变器的多个单元控制器上自动准确地建立中性点信息的高压逆变器的控制装置和控制方法，其中主控制器确定 中立点设定为自身并且执行与多个U相单元，多个V相单元和多个W相单元中的每一个配置的单元控制器的通信，以确定预设在 单元控制器，并且检测设置有与主控制器的中性点信息不同的中性点信息的单元控制器，并且使用在主控制器中设置的中性点信息来校正检测到的相关单元控制器的中性点信息，从而操作 高压变频器。

公开(公告)号：US07470295B2

公开(公告)日：2008-12-30

申请号：US11078538

申请日：2005-03-11

申请人： Dae Hyung Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

发明人： Dae Hyung Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

IPC分类号： C09G1/00 ,  C09G1/04 ,  C09G1/02

CPC分类号： B24B37/044 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

摘要翻译： 本文公开了用于化学机械抛光的抛光浆料。 抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。 抛光浆料还包括中值粒径为50-150nm的抛光颗粒。 本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。 本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。