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23 条记录 (耗时 0.018 秒)

    Dispersed solution of carbon nanotubes and method of preparing the same
    1.
    发明授权
    Dispersed solution of carbon nanotubes and method of preparing the same 有权
    碳纳米管分散溶液及其制备方法

    公开(公告)号：US08591771B2

    公开(公告)日：2013-11-26

    申请号：US11624928

    申请日：2007-01-19

    申请人： Seon-mi Yoon ,  Jae-young Choi ,  Un-gyu Paik ,  Jin-hyon Lee

    发明人： Seon-mi Yoon ,  Jae-young Choi ,  Un-gyu Paik ,  Jin-hyon Lee

    IPC分类号： H01B1/04 ,  B82Y40/00 ,  C01B31/00

    CPC分类号： C01B31/0273 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174

    摘要： Disclosed herein are a dispersed solution of carbon nanotubes including carbon nanotubes, an organic solvent, a spacer, and a dispersant, and a method of preparing the same. The dispersed solution of the carbon nanotubes includes both the spacer, which reduces the van der Waals force of the carbon nanotubes and prevents bundling of the carbon nanotubes, and the dispersant, which maintains the debundling and stability of the carbon nanotubes, thereby improving the dispersibility of the carbon nanotubes. The method of preparing the dispersed solution of the carbon nanotubes can easily produce a dispersed solution of carbon nanotubes without performing a separate chemical treatment.

    摘要翻译： 本文公开了包括碳纳米管，有机溶剂，间隔物和分散剂的碳纳米管的分散溶液及其制备方法。 碳纳米管的分散溶液包括间隔物，其降低了碳纳米管的范德华力并防止了碳纳米管的束缚，并且分散剂保持了碳纳米管的分解和稳定性，从而提高了分散性 的碳纳米管。 制备碳纳米管分散溶液的方法可以容易地生成碳纳米管的分散溶液，而不进行单独的化学处理。

    Polishing slurry, method of producing same, and method of polishing substrate
    2.
    发明授权
    Polishing slurry, method of producing same, and method of polishing substrate 有权
    抛光浆料，其制造方法以及抛光底物的方法

    公开(公告)号：US07470295B2

    公开(公告)日：2008-12-30

    申请号：US11078538

    申请日：2005-03-11

    申请人： Dae Hyung Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    发明人： Dae Hyung Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    IPC分类号： C09G1/00 ,  C09G1/04 ,  C09G1/02

    CPC分类号： B24B37/044 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

    摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

    摘要翻译： 本文公开了用于化学机械抛光的抛光浆料。 抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。 抛光浆料还包括中值粒径为50-150nm的抛光颗粒。 本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。 本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。

    Slurry for CMP and method of polishing substrate using same
    3.
    发明授权
    Slurry for CMP and method of polishing substrate using same 有权
    用于CMP的浆料和使用其的抛光衬底的方法

    公开(公告)号：US07364600B2

    公开(公告)日：2008-04-29

    申请号：US11127441

    申请日：2005-05-11

    申请人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    发明人： Dae Hyeong Kim ,  Seok Min Hong ,  Jae Hyun Jeon ,  Ho Seong Kim ,  Hyun Soo Park ,  Un Gyu Paik ,  Jae Gun Park ,  Yong Kuk Kim

    IPC分类号： C09G1/02 ,  C09G1/04

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.

    摘要翻译： 本文公开了抛光浆料及其制备方法。 抛光浆料在氧化物层的研磨速度与STI工艺的CMP中使用的氮化物层的研磨速度方面具有高选择性，该制造方法对于制造具有256兆D-RAM以上的设计规则的超高度集成半导体是必不可少的 ，例如，0.13mum以下的设计规则。 用于预处理抛光颗粒的方法和装置，分散装置和操作分散装置的方法，添加化学添加剂和添加量的方法以及用于转移样品的装置被适当地用于产生高性能 纳米二氧化铈浆料对于生产0.13毫米或更小的超高度集成半导体的工艺，特别是STI工艺。

    MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME
    10.
    发明申请
    MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME 审中-公开
    多选择性抛光浆料组合物和使用其的半导体元件生产方法

    公开(公告)号：US20120190201A1

    公开(公告)日：2012-07-26

    申请号：US13386494

    申请日：2010-07-09

    申请人： Jea-Gun Park ,  Un-Gyu Paik ,  Jin-Hyung Park ,  Hao Cui ,  Jong-Young Cho ,  Hee-Sub Hwang ,  Jae-Hyung Lim ,  Ye-Hwan Kim

    发明人： Jea-Gun Park ,  Un-Gyu Paik ,  Jin-Hyung Park ,  Hao Cui ,  Jong-Young Cho ,  Hee-Sub Hwang ,  Jae-Hyung Lim ,  Ye-Hwan Kim

    IPC分类号： H01L21/306 ,  C09K13/00

    CPC分类号： H01L21/31056 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

    摘要： Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.

    摘要翻译： 提供多选择性研磨浆料组合物和使用其的半导体元件制造方法。 具有元件图案的硅膜形成在具有第一区域和第二区域的基板的最上部。 第一区域上的元件图案密度高于第二区域上的元件图案密度。 在元件图案顶部依次形成第一氧化硅膜，氮化硅膜和第二氧化硅膜。 通过使用包含抛光剂，氮化硅膜钝化剂和硅膜钝化剂的抛光浆料组合物，对基材进行化学机械抛光，直到暴露硅膜。 抛光浆料组合物可以是100重量份的含有抛光剂的抛光剂悬浮液和40至120重量份的添加剂溶液的混合物，并且添加剂溶液可以包含100重量份的溶剂 ，0.01〜5重量份的氮化硅膜钝化剂和0.01〜5重量份的硅膜钝化剂。