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    METHODS, SYSTEMS AND DEVICES INCLUDING AN ENCODER FOR IMAGE PROCESSING
    1.
    发明申请
    METHODS, SYSTEMS AND DEVICES INCLUDING AN ENCODER FOR IMAGE PROCESSING 审中-公开
    包括图像处理编码器的方法，系统和设备

    公开(公告)号：US20160198156A1

    公开(公告)日：2016-07-07

    申请号：US14970571

    申请日：2015-12-16

    申请人： Young Beom Jung ,  Hyuk Jae Jang

    发明人： Young Beom Jung ,  Hyuk Jae Jang

    IPC分类号： H04N19/124 ,  H04N19/60 ,  H04N19/196 ,  H04N19/50 ,  H04N19/176 ,  H04N19/182

    CPC分类号： H04N19/124 ,  H04N19/136 ,  H04N19/176 ,  H04N19/182 ,  H04N19/196

    摘要： A method of operating an encoder is provided. The method includes generating predicted spatial-domain block values for current spatial-domain block pixel values, generating residual spatial-domain block values based on differences between the current spatial-domain block pixel values and the predicted spatial-domain block values, calculating a representative value of the residual spatial-domain block values, selecting a quantization parameter corresponding to the representative value from among a plurality of quantization parameters, and quantizing the residual spatial-domain block values using the selected quantization parameter.

    摘要翻译： 提供了一种操作编码器的方法。 该方法包括生成当前空间域块像素值的预测空间域块值，基于当前空间域块像素值与预测空间域块值之间的差异生成残余空间域块值，计算代表 剩余空间域块值的值，从多个量化参数中选择与代表值相对应的量化参数，以及使用所选择的量化参数量化剩余空间域块值。

    Thin film transistor with offset structure and electrodes in a symmetrical arrangement
    3.
    发明授权
    Thin film transistor with offset structure and electrodes in a symmetrical arrangement 有权
    具有偏移结构的薄膜晶体管和对称布置的电极

    公开(公告)号：US08476631B2

    公开(公告)日：2013-07-02

    申请号：US13084357

    申请日：2011-04-11

    申请人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

    发明人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

    IPC分类号： H01L29/786

    CPC分类号： H01L29/41733 ,  H01L29/78609 ,  H01L29/78624 ,  H01L29/78696

    摘要： A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.

    摘要翻译： 公开了一种具有偏移结构的薄膜晶体管（TFT）。 TFT保持足够低的“截止”电流和足够高的“导通”电流。 TFT包括有源区。 有源区包括栅电极; 与栅电极重叠的有源层; 栅电极和有源层之间的栅极绝缘层; 以及包括电连接到有源区的源极/漏极的源极/漏极电极层。 一些源极/漏极电极部分地与栅电极重叠。 源极/漏极中的其他源极与栅电极偏移。 源极/漏极和栅电极处于对称的布置。

    THIN FILM TRANSISTOR WITH OFFSET STRUCTURE
    4.
    发明申请
    THIN FILM TRANSISTOR WITH OFFSET STRUCTURE 有权
    具有偏移结构的薄膜晶体管

    公开(公告)号：US20110297937A1

    公开(公告)日：2011-12-08

    申请号：US13084357

    申请日：2011-04-11

    申请人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

    发明人： Ki-Hong Kim ,  Jeong-Hwan Kim ,  Yong-Jae Jang ,  Jung-Hyun Kim

    IPC分类号： H01L29/04

    CPC分类号： H01L29/41733 ,  H01L29/78609 ,  H01L29/78624 ,  H01L29/78696

    摘要： A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement.

    摘要翻译： 公开了一种具有偏移结构的薄膜晶体管（TFT）。 TFT保持足够低的“截止”电流和足够高的“导通”电流。 TFT包括有源区。 有源区包括栅电极; 与栅电极重叠的有源层; 栅电极和有源层之间的栅极绝缘层; 以及包括电连接到有源区的源极/漏极的源极/漏极电极层。 一些源极/漏极电极部分地与栅电极重叠。 源极/漏极中的其他源极与栅电极偏移。 源极/漏极和栅电极处于对称的布置。

    SALTS OF PYRROLOPYRIMIDINONE DERIVATIVES AND PROCESS FOR PREPARING THE SAME
    7.
    发明申请
    SALTS OF PYRROLOPYRIMIDINONE DERIVATIVES AND PROCESS FOR PREPARING THE SAME 审中-公开
    吡咯烷酮衍生物的制备方法及其制备方法

    公开(公告)号：US20100069632A1

    公开(公告)日：2010-03-18

    申请号：US12307144

    申请日：2007-07-03

    申请人： Nam Ho Kim ,  Jin-Young Lee ,  Jae-Sun Kim ,  Nam Kyu Lee ,  Woo Jae Jang ,  Joo Gyo Oh ,  Yoon-Jung Lee ,  Won-No Youn ,  Jin-Heung Sung ,  Key An Um

    发明人： Nam Ho Kim ,  Jin-Young Lee ,  Jae-Sun Kim ,  Nam Kyu Lee ,  Woo Jae Jang ,  Joo Gyo Oh ,  Yoon-Jung Lee ,  Won-No Youn ,  Jin-Heung Sung ,  Key An Um

    IPC分类号： C07D487/04

    CPC分类号： C07D487/04

    摘要： The present invention relates to salts of a pyrrolopyrimidinone derivative having superior PDE-5 inhibition activity and a process for preparing the same. More particularly, the present invention relates to a crystalline acid addition salt prepared by reacting a pyrrolopyrimidinone derivative with an acid selected from gentisic acid, maleic acid, citric acid, fumaric acid and tartaric acid. With no hygroscopic property and superior long-term storage stability, photostability and thermal stability, the salts of the pyrrolopyrimidinone derivative are appropriate to be prepared into medications and, with superior PDE-5 inhibition activity, are useful for the treatment and prevention of erectile dysfunction, pulmonary arterial hypertension, chronic obstructive pulmonary disease, benign prostatic hypertrophy and lower urinary tract diseases.

    摘要翻译： 本发明涉及具有优异的PDE-5抑制活性的吡咯并嘧啶酮衍生物的盐及其制备方法。 更具体地，本发明涉及通过使吡咯并嘧啶酮衍生物与选自龙胆酸，马来酸，柠檬酸，富马酸和酒石酸的酸反应制备的结晶酸加成盐。 无吸湿性和优异的长期储存稳定性，光稳定性和热稳定性，吡咯并嘧啶酮衍生物的盐适于制备成药物，并且具有优异的PDE-5抑制活性，可用于治疗和预防勃起功能障碍 肺动脉高压，慢性阻塞性肺疾病，良性前列腺肥大和下尿路疾病。

    REFRIGERATOR AND DISPENSER FOR THE SAME
    8.
    发明申请
    REFRIGERATOR AND DISPENSER FOR THE SAME 有权
    制冷机和分配器

    公开(公告)号：US20100043480A1

    公开(公告)日：2010-02-25

    申请号：US12524116

    申请日：2008-01-31

    申请人： Min-Bon Koo ,  Heon-Jae Jang

    发明人： Min-Bon Koo ,  Heon-Jae Jang

    IPC分类号： F25D3/00

    CPC分类号： F25D23/126 ,  F25C2400/10 ,  F25D2331/803

    摘要： According to the structure of the refrigerator and the dispenser for the same, water is easily dispensed as the water dispensing device and the ice dispensing device are separately provided and the water dispensing button is provided at the front of the chute cover, and the water dispensing device is minimally damaged due to the absorbing pad structure.

    摘要翻译： 根据冰箱及其分配器的结构，当水分配装置和冰分配装置分开设置时，水容易分配，并且水分配按钮设置在滑槽盖的前部，并且水分配 装置由于吸收垫结构而被最小程度地损坏。

    Fabrication method of polycrystalline silicon liquid crystal display device
    10.
    发明授权
    Fabrication method of polycrystalline silicon liquid crystal display device 有权
    多晶硅液晶显示装置的制造方法

    公开(公告)号：US07479415B2

    公开(公告)日：2009-01-20

    申请号：US11005646

    申请日：2004-12-06

    申请人： Hun Jeoung ,  Chang-Jae Jang

    发明人： Hun Jeoung ,  Chang-Jae Jang

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66757 ,  G02F1/1368 ,  H01L27/1248

    摘要： A method for fabricating a polysilicon silicon liquid crystal display device is disclosed in which a contact hole connecting source and drain electrodes to an active layer is formed without a stepped portion. An insulation layer containing a porous silicon nitride layer is formed. Wet etching the contact hole through the porous silicon nitride layer and an underlying silicon oxide layer does not generate the stepped portion as the etch rates of the porous silicon nitride layer and the silicon oxide layer are the same. Because the stepped portion is not generated at a contact hole, disconnection of source and drain electrodes formed in the contact hole is prevented, thereby preventing deterioration of the liquid crystal display device from occurring.

    摘要翻译： 公开了一种用于制造多晶硅硅液晶显示装置的方法，其中在没有阶梯部分的情况下形成将源极和漏极连接到有源层的接触孔。 形成包含多孔氮化硅层的绝缘层。 当多孔氮化硅层和氧化硅层的蚀刻速率相同时，通过多孔氮化硅层湿式蚀刻接触孔并且下面的氧化硅层不产生台阶部分。 由于在接触孔处不产生阶梯部，因此防止形成在接触孔中的源极和漏极的断开，从而防止液晶显示装置的劣化。