-
公开(公告)号：US06804272B2
公开(公告)日：2004-10-12
申请号：US10257680
申请日：2003-03-14
IPC分类号： H01S313
CPC分类号： H01S5/223 , H01S5/0658 , H01S5/20 , H01S5/204 , H01S5/2205 , H01S5/2231
摘要： A semiconductor self-pulsating laser diode (1) comprises a wave guiding layer (2) sandwiched between lower and upper cladding layers (4, 5). A current blocking layer (8) defining a slot (10) through which pumping current is directed through the laser diode between upper and lower contact plates (5, 6) defines an active wave guiding region (15). The current blocking layer (8) is shaped by the formation of longitudinally extending recesses (12) for defining the active wave guiding region (15) such that a central pulse light generating region (17) is formed surrounded by an outer light propagating region (18). As the laser diode is continuously pumped, an effective step change in refractive index between the wave guiding layer (2) and the outer light propagating region (18) is formed, and the carrier density and refractive index profiles across the active wave guiding region (15) vary as each light pulse cycle progresses. Initially, the carrier density in the central pulse light generating region 17 rises relative to the carrier density in the light propagating region 18 until the difference between the refractive index of the pulse light generating region 17 and the refractive index of the light propagating region 18 is at its greatest, and the carrier density of the pulse light generating region 17 reaches its lasing threshold value. At this stage lasing commences in the active wave guiding region 15. Lasing in the pulse light generating region 17 progressively reduces the carrier density therein, which in turn progressively reduces the relative difference between the refractive index of the pulse light generating region 17 and the light propagating region 18 until the refractive index of the pulse light generating region 17 approaches the refractive index of the light propagating region 18, thereby increasing guiding of lasing light into the pulse light generating region 17 for emission of the light pulse therefrom. At that stage the carrier density of the active wave guiding region 15 falls below its lasing threshold value, thus extinguishing the lasing light, and the next light pulse cycle commences.
-
公开(公告)号：US07557368B2
公开(公告)日：2009-07-07
申请号：US10506106
申请日：2003-03-03
IPC分类号： H01L29/205
CPC分类号： H01L31/105 , B82Y20/00 , H01L31/035236 , H01L31/108 , H01L31/1085
摘要： A semiconductor photodetector (1) for detecting short duration laser light pulses of predetermined wavelength in a light signal (2) comprises a micro-resonator (3) of vertical Fabry-Perot construction having a Bragg mirror pair, namely, a front mirror (5) and a rear mirror (6) with an active region (8) located between the front and rear mirrors (5,6). An N-type substrate (11) supports the rear mirror (6). The light signal (2) is directed into the active region (8) through the front mirror (5) while a pump beam (17) is directed into the active region (8) at an end (18) thereof. The spacing between the front and rear mirrors (5,6) is such as to cause light of the predetermined wavelength to resonate between the mirrors (5,6). The semiconductor material of the active region (8) is selected so that one photon from each of the light signal (2) and the pump beam (17) are required to transfer one electron from a valence band (21) of the active region (8) across a bandgap (22) to a conduction band (20) so that the active region operates on the principle of Two-Photon Absorption. On the active region (8) being simultaneously subjected to the pump beam and light of the predetermined wavelength in the light signal (2) electrons are transferred by Two-Photon Absorption from the valence band (21) to the conduction band (20), thus causing a change in the voltage developed across the active region (8). The change in voltage is detected between an electrode (15) on the substrate (11) and electrodes (8) on the front mirror (5) thereby indicating the presence of light of the predetermined wavelength in the light signal (2).
摘要翻译： 一种用于在光信号（2）中检测预定波长的短持续时间激光脉冲的半导体光电检测器（1）包括具有布拉格光束对的垂直法布里 - 珀罗结构的微谐振器（3），即前反射镜 ）和具有位于前后反射镜（5,6）之间的有源区域（8）的后反射镜（6）。 N型基板（11）支撑后反射镜（6）。 光信号（2）通过前反射镜（5）被引导到有源区域（8）中，而泵浦光束（17）在其端部（18）处被引导到有源区域（8）中。 前后反射镜（5,6）之间的间隔使得预定波长的光在反射镜（5,6）之间共振。 有源区域（8）的半导体材料被选择为使得来自光信号（2）和泵浦光束（17）中的每一个的一个光子需要从有源区域的价带（21）传送一个电子 8）穿过带隙（22）到导带（20），使得有源区域以双光子吸收原理工作。 在有源区域（8）同时经受泵浦光束和光信号（2）中的预定波长的光，电子通过双光子吸收从价带（21）转移到导带（20）， 从而导致在有源区（8）上产生的电压的变化。 在基板（11）上的电极（15）和前反射镜（5）上的电极（8）之间检测电压变化，从而指示在光信号（2）中存在预定波长的光。
-
公开(公告)号：US06978057B1
公开(公告)日：2005-12-20
申请号：US10088758
申请日：2000-09-25
申请人： James Christopher O'Gorman , Paul McEvoy , David McDonald , Frederick Paul Logue , Pascal Michel Landais
发明人： James Christopher O'Gorman , Paul McEvoy , David McDonald , Frederick Paul Logue , Pascal Michel Landais
CPC分类号： H01S5/4031 , H01S5/0654 , H01S5/10 , H01S5/1017 , H01S5/4087
摘要： A laser diode (1) having an optical path (15) defined in an active layer (2) which is sandwiched between a substrate layer (3) and a top layer (4) and defined by a ridge (14) formed in the top layer (4) outputs laser light of a single predetermined wavelength. Refractive index altering grooves (21) extending transversely in the top layer (4) are provided at spaced apart locations for altering the refractive index of the active layer (2) along the optical path at partial reflecting locations (20) for causing partial longitudinal reflections of the laser light generated in the optical path (15) so that standing waves or harmonics thereof of the single predetermined wavelength are set up between the respective partial reflecting locations (20) and a first mirror facet (8) in the optical path (15). In order that the standing waves set up between the partial reflecting locations (20) and the first mirror facet (8) are harmonics of the predetermined single wavelength, the refractive index altering grooves (21) are located along the ridge (14) for forming the reflecting locations (20) at distances from the first mirror facet (8) which correspond to the effective length of the optical path (15) resulting from the affect of the inclusion of the reflecting locations (20) rather than at locations corresponding to the actual length of the light path (15).
摘要翻译： 一种激光二极管（1），其具有限定在有源层（2）中的光路（15），该有源层（2）夹在基板层（3）和顶层（4）之间，并由形成在顶部 层（4）输出单个预定波长的激光。 在间隔开的位置处提供横向延伸在顶层（4）中的折射率改变槽（21），用于在部分反射位置（20）处沿着光路改变有源层（2）的折射率，以使局部纵向反射 在所述光路（15）中产生的激光的每个部分反射位置（20）和所述光路（15）中的第一镜面（8）之间建立其单个预定波长的驻波或谐波 ）。 为了在部分反射位置（20）和第一镜面（8）之间建立的驻波是预定单波长的谐波，折射率改变槽（21）沿着脊（14）定位成形 距离第一镜面（8）的距离对应于由包含反射位置（20）的影响而导致的光路（15）的有效长度的反射位置（20），而不是对应于 光路的实际长度（15）。
-
公开(公告)号：US06940883B2
公开(公告)日：2005-09-06
申请号：US10240390
申请日：2001-03-28
CPC分类号： H01S5/20 , H01S5/0655 , H01S5/2004 , H01S5/22 , H01S5/2231
摘要： A laser diode (1) for outputting light of a single mode comprises a substrate layer (5), a cladding layer (6) and a compound light propagating layer (7) comprising first, second, third and fourth layers (9 to 12). A wave guiding region (15) of refractive index lower than its adjacent regions is defined by the third layer (11) by two quantum wells (16) positioned at the anti-node of light of a single mode which is propagating in the third layer (11) for propagating and amplifying the single mode light. A central ridge (17) locates the wave guiding region transversely of the direction of light propagation. The wave guiding region (15) can also be defined by shaping the top cladding layer (6) by forming an elongated central channel through the central ridge (17).
摘要翻译： 用于输出单模光的激光二极管（1）包括基片层（5），包覆层（6）和复合光传播层（7），其包括第一，第二，第三和第四层（9至12） 。 由第三层（11）由位于第三层中传播的单模光的反节点的两个量子阱（16）限定折射率低于其相邻区域的波导区域（15） （11），用于传播和放大单模光。 中心脊（17）将波导区域横向于光传播方向定位。 波导区域（15）也可以通过通过中心脊（17）形成细长的中心通道来形成顶部包层（6）来限定。
-
-
-
搜索结果
4 条记录 (耗时 0.012 秒)