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公开(公告)号：US20110132810A1
公开(公告)日：2011-06-09
申请号：US12964567
申请日：2010-12-09
CPC分类号： B03C1/0335 , B03C1/005 , B03C1/035 , B03C2201/20
摘要： A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
摘要翻译： 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。
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2.发明授权Separating metallic and semiconductor SWNTs with varying dipole-inducing magnetic fields 有权分离具有变化的偶极诱导磁场的金属和半导体SWNT公开(公告)号：US08789705B2
公开(公告)日：2014-07-29
申请号：US12967637
申请日：2010-12-14
IPC分类号： B03C1/30
CPC分类号： C01B31/0266 , B03C1/005 , B03C1/0335 , B03C1/035 , B03C2201/20 , B03C2201/22 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B2202/02 , C01B2202/22 , Y10S977/751 , Y10S977/845
摘要： A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
摘要翻译： 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。
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3.发明申请GROWN CARBON NANOTUBE DIE ATTACH STRUCTURES, ARTICLES, DEVICES, AND PROCESSES FOR MAKING THEM 有权生产碳纳米管的附件结构，文章，设备及其制造工艺公开(公告)号：US20130234313A1
公开(公告)日：2013-09-12
申请号：US13414902
申请日：2012-03-08
CPC分类号： H01L23/373 , B82Y10/00 , C09J163/00 , H01L21/563 , H01L23/3107 , H01L23/49513 , H01L23/49541 , H01L23/49568 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L24/92 , H01L2224/29076 , H01L2224/291 , H01L2224/2919 , H01L2224/29193 , H01L2224/2929 , H01L2224/2939 , H01L2224/32245 , H01L2224/331 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/83104 , H01L2224/83139 , H01L2224/8314 , H01L2224/83141 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83862 , H01L2224/83897 , H01L2224/83951 , H01L2224/83986 , H01L2224/858 , H01L2224/85801 , H01L2224/8585 , H01L2224/85899 , H01L2224/9205 , H01L2924/10253 , H01L2924/12042 , H01L2924/15724 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/014
摘要： An article of manufacture includes a semiconductor die (110) having an integrated circuit (105) on a first side of the die (110), a diffusion barrier (125) on a second side of the die (110) opposite the first side, a mat of carbon nanotubes (112) rooted to the diffusion barrier (125), a die attach adhesive (115) forming an integral mass with the mat (112) of the carbon nanotubes, and a die pad (120) adhering to the die attach adhesive and (115) and the mat (112) of carbon nanotubes for at least some thermal transfer between the die (110) and the die pad (120) via the carbon nanotubes (112). Other articles, integrated circuit devices, structures, and processes of manufacture, and assembly processes are also disclosed.
摘要翻译： 一种制造方法包括在管芯（110）的第一侧上具有集成电路（105）的半导体管芯（110），在与第一侧相对的管芯（110）的第二侧上的扩散阻挡层（125） 基于所述扩散阻挡层（125）的碳纳米管（112）垫，与所述碳纳米管的所述垫（112）形成整体的芯片附接粘合剂（115）和粘附到所述模具 附着粘合剂和（115）和碳纳米管的垫（112），以经由碳纳米管（112）在管芯（110）和管芯焊盘（120）之间进行至少一些热转移。 还公开了其它制品，集成电路器件，结构以及制造工艺和组装工艺。
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公开(公告)号：US20110132811A1
公开(公告)日：2011-06-09
申请号：US12967637
申请日：2010-12-14
CPC分类号： C01B31/0266 , B03C1/005 , B03C1/0335 , B03C1/035 , B03C2201/20 , B03C2201/22 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B2202/02 , C01B2202/22 , Y10S977/751 , Y10S977/845
摘要： A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
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5.发明授权Grown carbon nanotube die attach structures, articles, devices, and processes for making them 有权生长碳纳米管管芯附着结构，制品，器件和制造它们的工艺公开(公告)号：US08753924B2
公开(公告)日：2014-06-17
申请号：US13414902
申请日：2012-03-08
CPC分类号： H01L23/373 , B82Y10/00 , C09J163/00 , H01L21/563 , H01L23/3107 , H01L23/49513 , H01L23/49541 , H01L23/49568 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L24/92 , H01L2224/29076 , H01L2224/291 , H01L2224/2919 , H01L2224/29193 , H01L2224/2929 , H01L2224/2939 , H01L2224/32245 , H01L2224/331 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/83104 , H01L2224/83139 , H01L2224/8314 , H01L2224/83141 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83862 , H01L2224/83897 , H01L2224/83951 , H01L2224/83986 , H01L2224/858 , H01L2224/85801 , H01L2224/8585 , H01L2224/85899 , H01L2224/9205 , H01L2924/10253 , H01L2924/12042 , H01L2924/15724 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/014
摘要： An article of manufacture includes a semiconductor die (110) having an integrated circuit (105) on a first side of the die (110), a diffusion barrier (125) on a second side of the die (110) opposite the first side, a mat of carbon nanotubes (112) rooted to the diffusion barrier (125), a die attach adhesive (115) forming an integral mass with the mat (112) of the carbon nanotubes, and a die pad (120) adhering to the die attach adhesive and (115) and the mat (112) of carbon nanotubes for at least some thermal transfer between the die (110) and the die pad (120) via the carbon nanotubes (112). Other articles, integrated circuit devices, structures, and processes of manufacture, and assembly processes are also disclosed.
摘要翻译： 一种制造方法包括在管芯（110）的第一侧上具有集成电路（105）的半导体管芯（110），在与第一侧相对的管芯（110）的第二侧上的扩散阻挡层（125） 基于所述扩散阻挡层（125）的碳纳米管（112）垫，与所述碳纳米管的所述垫（112）形成整体的芯片附接粘合剂（115）和粘附到所述模具 附着粘合剂和（115）和碳纳米管的垫（112），以经由碳纳米管（112）在管芯（110）和管芯焊盘（120）之间进行至少一些热转移。 还公开了其它制品，集成电路器件，结构以及制造工艺和组装工艺。
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