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公开(公告)号:US20140197530A1
公开(公告)日:2014-07-17
申请号:US13739045
申请日:2013-01-11
申请人: Thorsten Meyer , Sven Albers , Christian Geissler , Andreas Wolter , Markus Brunnbauer , David O'Sullivan , Frank Zudock , Jan Proschwitz
发明人: Thorsten Meyer , Sven Albers , Christian Geissler , Andreas Wolter , Markus Brunnbauer , David O'Sullivan , Frank Zudock , Jan Proschwitz
CPC分类号: H01L23/315 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L23/562 , H01L24/19 , H01L2224/02375 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要: A semiconductor device is described having at least one semiconductor chip, the chip having an active area on a top side thereof, the active area formed at least in part of low-k material, said low-k material defining a low-k subarea of said active area; an embedding material, in which said at least one semiconductor chip is embedded, at least part of the embedding material forming a coplanar area with said active area; at least one contact area within the low-k subarea; a redistribution layer on the coplanar area, the redistribution layer connected to said contact areas; at least one first-level interconnect, located outside said low-k subarea, the first-level interconnect electrically connected to at least one of said contact areas via the redistribution layer.
摘要翻译: 描述了半导体器件,其具有至少一个半导体芯片,该芯片在其顶侧具有有源区,至少部分形成在低k材料上的有源区,所述低k材料限定低k分区 说活跃区; 嵌入材料,其中所述至少一个半导体芯片被嵌入,所述嵌入材料的至少一部分与所述有源区域形成共面区域; 低k子区域内的至少一个接触区域; 在共面区域上的再分配层,再分配层连接到所述接触区域; 位于所述低k子区域外的至少一个第一级互连,所述第一级互连经由再分配层电连接到所述接触区域中的至少一个。
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公开(公告)号:US08786105B1
公开(公告)日:2014-07-22
申请号:US13739045
申请日:2013-01-11
申请人: Thorsten Meyer , Sven Albers , Christian Geissler , Andreas Wolter , Markus Brunnbauer , David O'Sullivan , Frank Zudock , Jan Proschwitz
发明人: Thorsten Meyer , Sven Albers , Christian Geissler , Andreas Wolter , Markus Brunnbauer , David O'Sullivan , Frank Zudock , Jan Proschwitz
CPC分类号: H01L23/315 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L23/562 , H01L24/19 , H01L2224/02375 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要: A semiconductor device is described having at least one semiconductor chip, the chip having an active area on a top side thereof, the active area formed at least in part of low-k material, said low-k material defining a low-k subarea of said active area; an embedding material, in which said at least one semiconductor chip is embedded, at least part of the embedding material forming a coplanar area with said active area; at least one contact area within the low-k subarea; a redistribution layer on the coplanar area, the redistribution layer connected to said contact areas; at least one first-level interconnect, located outside said low-k subarea, the first-level interconnect electrically connected to at least one of said contact areas via the redistribution layer.
摘要翻译: 描述了半导体器件,其具有至少一个半导体芯片,该芯片在其顶侧具有有源区,至少部分形成在低k材料上的有源区,所述低k材料限定低k分区 说活跃区; 嵌入材料,其中所述至少一个半导体芯片被嵌入,所述嵌入材料的至少一部分与所述有源区域形成共面区域; 低k子区域内的至少一个接触区域; 在共面区域上的再分配层,再分配层连接到所述接触区域; 位于所述低k子区域外的至少一个第一级互连,所述第一级互连经由再分配层电连接到所述接触区域中的至少一个。
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