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公开(公告)号:US20180092443A1
公开(公告)日:2018-04-05
申请号:US15282633
申请日:2016-09-30
申请人: Sven Albers , Klaus Reingruber , Andreas Wolter , Georg Seidemann , Christian Geissler , Thorsten Meyer , Gerald Ofner
发明人: Sven Albers , Klaus Reingruber , Andreas Wolter , Georg Seidemann , Christian Geissler , Thorsten Meyer , Gerald Ofner
IPC分类号: A44C5/02 , H04B1/3827 , A45F5/00 , A44C5/00 , G01D11/30 , A61B5/0205 , A61B5/00
CPC分类号: G06F1/163 , A44C5/00 , A44C5/02 , A44C5/105 , A45F5/00 , A45F2005/008 , A45F2200/0508 , A61B5/02055 , A61B5/021 , A61B5/02438 , A61B5/1112 , A61B5/681 , A61B2560/0257 , A61B2560/0443 , A61B2562/0219 , G04B37/1486 , G04B47/00 , H04B1/385
摘要: A flexible band wearable electronic device includes a plurality of rigid links. The flexible band wearable electronic device also includes a number of pivot joints coupling the plurality of rigid links together. The flexible band wearable electronic device further includes a first electronic device on a first of the plurality of rigid links, and a second electronic device on a second of the plurality of rigid links. The flexible band wearable electronic device still further includes an electrical communication pathway between first electronic device and the second electronic device and through at least a portion of one of the number of pivot joints.
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公开(公告)号:US20150333022A1
公开(公告)日:2015-11-19
申请号:US14280110
申请日:2014-05-16
申请人: Sven Albers , Georg Seidemann , Sonja Koller , Stephan Stoeckl , Shubhada H. Sahasrabudhe , Sandeep B. Sane
发明人: Sven Albers , Georg Seidemann , Sonja Koller , Stephan Stoeckl , Shubhada H. Sahasrabudhe , Sandeep B. Sane
IPC分类号: H01L23/00 , H01L23/498
CPC分类号: H01L24/05 , H01L23/49811 , H01L23/49816 , H01L24/03 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0401 , H01L2224/141 , H01L2224/16238 , H01L2924/15311 , H01L2924/3511 , H05K1/111 , H05K3/3436 , H05K2201/0373
摘要: Disclosed herein are contact pads for use with integrated circuit (IC) packages. In some embodiments, a contact pad disclosed herein may be disposed on a substrate of an IC package, and may include a metal projection portion and a metal recess portion. Each of the metal projection portion and the metal recess portion may have a solder contact surface. The solder contact surface of the metal recess portion may be spaced away from the solder contact surface of the metal projection portion. Related devices and techniques are also disclosed herein, and other embodiments may be claimed.
摘要翻译: 这里公开了与集成电路(IC)封装一起使用的接触焊盘。 在一些实施例中,本文公开的接触垫可以设置在IC封装的基板上,并且可以包括金属突出部分和金属凹部。 金属突出部和金属凹部中的每一个可以具有焊料接触表面。 金属凹部的焊接接触表面可以与金属突出部的焊接接触表面间隔开。 本文还公开了相关的设备和技术,并且可以要求保护其他实施例。
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公开(公告)号:US20150282308A1
公开(公告)日:2015-10-01
申请号:US14229476
申请日:2014-03-28
申请人: Thorsten Meyer , Gerald Ofner , Sven Albers , Reinhard Mahnkopf
发明人: Thorsten Meyer , Gerald Ofner , Sven Albers , Reinhard Mahnkopf
CPC分类号: H05K1/181 , H01L21/568 , H01L23/49822 , H01L23/49827 , H01L23/5227 , H01L23/66 , H01L24/00 , H01L24/96 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/18 , H01L2224/04042 , H01L2224/12105 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06568 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/19011 , H01L2924/19105 , H05K1/0233 , H05K1/0292 , H05K1/162 , H05K1/165 , H05K1/185 , H05K3/4644 , H05K2201/10636 , H05K2203/1469 , H05K2203/171 , H05K2203/173 , H05K2203/175 , Y02P70/611 , H01L2924/00012 , H01L2924/00
摘要: Passive electrical devices are described with a polymer carrier. In one example, a conductive layer is formed over a polymer substrate in a pattern to form a passive electrical device and at least two terminals of the device. A plurality of external connection pads are connected to the terminals of the device.
摘要翻译: 无源电器件用聚合物载体描述。 在一个示例中,导电层以图案形成在聚合物基板上,以形成无源电器件和器件的至少两个端子。 多个外部连接焊盘连接到设备的端子。
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公开(公告)号:US20140264914A1
公开(公告)日:2014-09-18
申请号:US13833514
申请日:2013-03-15
申请人: Thorsten Meyer , Sven Albers , Andreas Wolter
发明人: Thorsten Meyer , Sven Albers , Andreas Wolter
CPC分类号: H01L25/105 , H01L21/568 , H01L22/14 , H01L23/31 , H01L23/3107 , H01L23/3135 , H01L24/24 , H01L24/82 , H01L24/96 , H01L25/03 , H01L25/0657 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/18 , H01L2224/19 , H01L2224/24226 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/73267 , H01L2224/81005 , H01L2224/83005 , H01L2224/83192 , H01L2224/92244 , H01L2225/06517 , H01L2225/06524 , H01L2225/06548 , H01L2225/06572 , H01L2225/1023 , H01L2225/1035 , H01L2225/1058 , H01L2924/1461 , H01L2924/15192 , H01L2924/15311 , H01L2924/1533 , H01L2924/181 , H01L2924/18161 , H01L2924/19107 , H01L2924/00 , H01L2224/16225 , H01L2924/00012
摘要: An electronic package includes an interposer, a die attached to a first side of the interposer, an embedded electronic package attached to a second side of the interposer, an encapsulation compound, a set of vias providing electrical paths from a first side of the electronic package to the interposer through the encapsulation compound, and a redistribution layer electrically redistributing the set of vias to form a set of interconnect-pads. Either the die or the embedded electronic package, or both, are electrically connected to the interposer.
摘要翻译: 电子封装包括插入器,附接到插入件的第一侧的管芯,附接到插入件的第二侧的嵌入式电子封装,封装化合物,从电子封装的第一侧提供电路径的一组通孔 通过所述封装化合物施加到所述插入件,以及再分布层,电再重分配所述一组通孔以形成一组互连焊盘。 芯片或嵌入式电子封装或两者都电连接到插入器。
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公开(公告)号:US20140264832A1
公开(公告)日:2014-09-18
申请号:US13802848
申请日:2013-03-14
申请人: Thorsten Meyer , Hans-Joachim Barth , Reinhard Mahnkopf , Sven Albers , Andreas Augustin , Christian Mueller
发明人: Thorsten Meyer , Hans-Joachim Barth , Reinhard Mahnkopf , Sven Albers , Andreas Augustin , Christian Mueller
IPC分类号: H01L23/00
CPC分类号: H01L24/17 , H01L23/5256 , H01L23/5382 , H01L25/0657 , H01L2224/02379 , H01L2224/0401 , H01L2224/0557 , H01L2224/131 , H01L2224/16146 , H01L2224/1703 , H01L2224/17107 , H01L2224/17154 , H01L2224/17181 , H01L2224/17517 , H01L2224/81193 , H01L2924/12042 , H01L2924/014 , H01L2924/00
摘要: A chip arrangement may include: a first chip including a first contact, a second contact, and a redistribution structure electrically coupling the first contact to the second contact; a second chip including a contact; and a plurality of interconnects electrically coupled to the second contact of the first chip, wherein at least one interconnect of the plurality of interconnects electrically couples the second contact of the first chip to the contact of the second chip.
摘要翻译: 芯片布置可以包括:第一芯片,其包括第一触点,第二触点和将第一触点电耦合到第二触点的再分配结构; 包括触点的第二芯片; 以及电耦合到第一芯片的第二触点的多个互连,其中多个互连件中的至少一个互连将第一芯片的第二触点电耦合到第二芯片的触点。
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公开(公告)号:US20140252632A1
公开(公告)日:2014-09-11
申请号:US13786538
申请日:2013-03-06
申请人: Hans-Joachim Barth , Reinhard Mahnkopf , Thorsten Meyer , Sven Albers , Andreas Augustin , Christian Mueller
发明人: Hans-Joachim Barth , Reinhard Mahnkopf , Thorsten Meyer , Sven Albers , Andreas Augustin , Christian Mueller
IPC分类号: H01L23/538
CPC分类号: H01L23/5384 , H01L23/49816 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/19 , H01L25/0657 , H01L25/18 , H01L2224/02375 , H01L2224/0239 , H01L2224/0401 , H01L2224/04105 , H01L2224/05548 , H01L2224/05569 , H01L2224/05624 , H01L2224/05647 , H01L2224/12105 , H01L2224/13025 , H01L2224/131 , H01L2224/13147 , H01L2224/16146 , H01L2224/16227 , H01L2224/1703 , H01L2224/17181 , H01L2224/2518 , H01L2224/32225 , H01L2224/73204 , H01L2224/73259 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06548 , H01L2924/00014 , H01L2924/1421 , H01L2924/1431 , H01L2924/1432 , H01L2924/1434 , H01L2924/1436 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01L2224/16225 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor device includes: a semiconductor chip; an extension layer extending laterally from a boundary of the semiconductor chip; a redistribution layer disposed over at least one side of the extension layer and the semiconductor chip, wherein the redistribution layer electrically couples at least one contact of the semiconductor chip to at least one contact of an interface, wherein at least a part of the interface extends laterally beyond the boundary of the semiconductor chip.
摘要翻译: 半导体器件包括:半导体芯片; 延伸层,其从半导体芯片的边界横向延伸; 重新分配层,其设置在所述延伸层和所述半导体芯片的至少一侧上,其中所述再分配层将所述半导体芯片的至少一个触点电耦合到界面的至少一个触点,其中所述界面的至少一部分延伸 横向超出半导体芯片的边界。
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公开(公告)号:US08786105B1
公开(公告)日:2014-07-22
申请号:US13739045
申请日:2013-01-11
申请人: Thorsten Meyer , Sven Albers , Christian Geissler , Andreas Wolter , Markus Brunnbauer , David O'Sullivan , Frank Zudock , Jan Proschwitz
发明人: Thorsten Meyer , Sven Albers , Christian Geissler , Andreas Wolter , Markus Brunnbauer , David O'Sullivan , Frank Zudock , Jan Proschwitz
CPC分类号: H01L23/315 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L23/562 , H01L24/19 , H01L2224/02375 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要: A semiconductor device is described having at least one semiconductor chip, the chip having an active area on a top side thereof, the active area formed at least in part of low-k material, said low-k material defining a low-k subarea of said active area; an embedding material, in which said at least one semiconductor chip is embedded, at least part of the embedding material forming a coplanar area with said active area; at least one contact area within the low-k subarea; a redistribution layer on the coplanar area, the redistribution layer connected to said contact areas; at least one first-level interconnect, located outside said low-k subarea, the first-level interconnect electrically connected to at least one of said contact areas via the redistribution layer.
摘要翻译: 描述了半导体器件,其具有至少一个半导体芯片,该芯片在其顶侧具有有源区,至少部分形成在低k材料上的有源区,所述低k材料限定低k分区 说活跃区; 嵌入材料,其中所述至少一个半导体芯片被嵌入,所述嵌入材料的至少一部分与所述有源区域形成共面区域; 低k子区域内的至少一个接触区域; 在共面区域上的再分配层,再分配层连接到所述接触区域; 位于所述低k子区域外的至少一个第一级互连,所述第一级互连经由再分配层电连接到所述接触区域中的至少一个。
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公开(公告)号:US20140015131A1
公开(公告)日:2014-01-16
申请号:US13548705
申请日:2012-07-13
申请人: Thorsten Meyer , Gerald Ofner , Sven Albers
发明人: Thorsten Meyer , Gerald Ofner , Sven Albers
IPC分类号: H01L23/498 , H01L23/48
CPC分类号: H01L23/49816 , H01L21/561 , H01L23/5389 , H01L24/05 , H01L24/16 , H01L24/19 , H01L24/24 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L2224/02379 , H01L2224/0401 , H01L2224/04105 , H01L2224/05548 , H01L2224/12105 , H01L2224/13022 , H01L2224/131 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/24011 , H01L2224/24105 , H01L2224/24145 , H01L2224/24146 , H01L2224/24195 , H01L2224/2919 , H01L2224/2929 , H01L2224/29299 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73209 , H01L2224/73217 , H01L2224/73253 , H01L2224/73259 , H01L2224/73265 , H01L2224/73267 , H01L2224/81191 , H01L2224/82031 , H01L2224/82039 , H01L2224/821 , H01L2224/83191 , H01L2224/83385 , H01L2224/92124 , H01L2224/92224 , H01L2224/92244 , H01L2224/96 , H01L2224/97 , H01L2924/00014 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , H01L2924/19105 , H01L2224/16225 , H01L2924/00 , H01L2924/0665 , H01L2224/83 , H01L2924/01014 , H01L2924/01006 , H01L2224/82 , H01L2924/014 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A stacked semiconductor device and method of manufacturing a stacked semiconductor device are described. The semiconductor device may include a reconstituted base layer having a plurality of embedded semiconductor chips. A first redistribution layer may contact the electrically conductive contacts of the embedded chips and extend beyond the boundary of one or more of the embedded chips, forming a fan-out area. Another chip may be stacked above the chips embedded in the base layer and be electrically connected to the embedded chips by a second redistribution layer. Additional layers of chips may be included in the semiconductor device.
摘要翻译: 对叠层半导体器件及其制造方法进行说明。 半导体器件可以包括具有多个嵌入式半导体芯片的复原基底层。 第一再分配层可以接触嵌入式芯片的导电触点并且延伸超过一个或多个嵌入式芯片的边界,形成扇出区域。 另外的芯片可以堆叠在嵌入在基底层中的芯片之上,并通过第二再分布层与嵌入式芯片电连接。 芯片的附加层可以包括在半导体器件中。
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公开(公告)号:US07888703B2
公开(公告)日:2011-02-15
申请号:US12028667
申请日:2008-02-08
申请人: Sven Albers , Klaus Diefenbeck , Bernd Eisener , Gernot Langguth , Christian Lehrer , Karl-Heinz Malek , Eberhard Rohrer
发明人: Sven Albers , Klaus Diefenbeck , Bernd Eisener , Gernot Langguth , Christian Lehrer , Karl-Heinz Malek , Eberhard Rohrer
IPC分类号: H01L29/72
CPC分类号: H01L27/0262 , H01L29/7436
摘要: An ESD protection apparatus includes a substrate, a transistor structure arranged in the substrate, and a diode structure arranged in the substrate, a high-resistance electrical connection being provided between the transistor structure and the diode structure in the substrate.
摘要翻译: ESD保护装置包括衬底,布置在衬底中的晶体管结构和布置在衬底中的二极管结构,在晶体管结构和衬底中的二极管结构之间提供高电阻电连接。
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公开(公告)号:US20080192395A1
公开(公告)日:2008-08-14
申请号:US12028667
申请日:2008-02-08
申请人: Sven Albers , Klaus Diefenbeck , Bernd Eisener , Gernot Langguth , Christian Lehrer , Karl-Heinz Malek , Eberhard Rohrer
发明人: Sven Albers , Klaus Diefenbeck , Bernd Eisener , Gernot Langguth , Christian Lehrer , Karl-Heinz Malek , Eberhard Rohrer
IPC分类号: H02H9/00
CPC分类号: H01L27/0262 , H01L29/7436
摘要: An ESD protection apparatus includes a substrate, a transistor structure arranged in the substrate, and a diode structure arranged in the substrate, a high-resistance electrical connection being provided between the transistor structure and the diode structure in the substrate.
摘要翻译: ESD保护装置包括衬底,布置在衬底中的晶体管结构和布置在衬底中的二极管结构,在晶体管结构和衬底中的二极管结构之间提供高电阻电连接。
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