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    STRAIN ENGINEERED COMPOSITE SEMICONDUCTOR SUBSTRATES AND METHODS OF FORMING SAME
    1.
    发明申请
    STRAIN ENGINEERED COMPOSITE SEMICONDUCTOR SUBSTRATES AND METHODS OF FORMING SAME 有权
    应变工程复合半导体基片及其形成方法

    公开(公告)号：US20100127353A1

    公开(公告)日：2010-05-27

    申请号：US12610065

    申请日：2009-10-30

    申请人： Fabrice LETERTRE ,  Jean-Marc BETHOUX ,  Alice BOUSSAGOL

    发明人： Fabrice LETERTRE ,  Jean-Marc BETHOUX ,  Alice BOUSSAGOL

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/76254

    摘要： Composite substrates are produced that include a strained III-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the III-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The III-nitride material may be formed with a Ga polarity or a N polarity. The desired lattice strain may be developed by forming a buffer layer between the III-nitride material and a growth substrate, implanting a dopant in the III-nitride material to modify its lattice parameter, or forming the III-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.

    摘要翻译： 生产复合衬底，其包括在支撑衬底上的应变III族氮化物材料种子层。 制造复合衬底的方法包括在III族氮化物材料中开发所需的晶格应变，以产生基本上与要在复合衬底上形成的器件结构的晶格参数匹配的晶格参数。 III族氮化物材料可以形成为Ga极性或N极性。 可以通过在III族氮化物材料和生长衬底之间形成缓冲层来形成所需的晶格应变，在III族氮化物材料中注入掺杂剂以改变其晶格参数，或者用热系数形成III族氮化物材料 在具有不同CTE的生长衬底上的膨胀（CTE）。

    Strain engineered composite semiconductor substrates and methods of forming same
    2.
    发明授权
    Strain engineered composite semiconductor substrates and methods of forming same 有权
    应变工程复合半导体基板及其形成方法

    公开(公告)号：US08679942B2

    公开(公告)日：2014-03-25

    申请号：US12610065

    申请日：2009-10-30

    申请人： Fabrice Letertre ,  Jean-Marc Bethoux ,  Alice Boussagol

    发明人： Fabrice Letertre ,  Jean-Marc Bethoux ,  Alice Boussagol

    IPC分类号： H01L29/20

    CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/76254

    摘要： Composite substrates are produced that include a strained III-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the III-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The III-nitride material may be formed with a Ga polarity or an N polarity. The desired lattice strain may be developed by forming a buffer layer between the III-nitride material and a growth substrate, implanting a dopant in the III-nitride material to modify its lattice parameter, or forming the III-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.

    摘要翻译： 生产复合衬底，其包括在支撑衬底上的应变III族氮化物材料种子层。 制造复合衬底的方法包括在III族氮化物材料中开发所需的晶格应变，以产生基本上与要在复合衬底上形成的器件结构的晶格参数匹配的晶格参数。 III族氮化物材料可以形成为Ga极性或N极性。 可以通过在III族氮化物材料和生长衬底之间形成缓冲层来形成所需的晶格应变，在III族氮化物材料中注入掺杂剂以改变其晶格参数，或者用热系数形成III族氮化物材料 在具有不同CTE的生长衬底上的膨胀（CTE）。

    METHOD FOR FORMING A BURIED METAL LAYER STRUCTURE
    3.
    发明申请
    METHOD FOR FORMING A BURIED METAL LAYER STRUCTURE 有权
    形成金属层结构的方法

    公开(公告)号：US20130285067A1

    公开(公告)日：2013-10-31

    申请号：US13988196

    申请日：2011-11-16

    申请人： Jean-Marc Bethoux ,  Pascal Guenard

    发明人： Jean-Marc Bethoux ,  Pascal Guenard

    IPC分类号： H01L33/32 ,  H01L31/18 ,  H01L33/00

    CPC分类号： H01L33/32 ,  H01L21/76254 ,  H01L31/1852 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/40 ,  H01L2924/0002 ,  H01S5/0425 ,  H01S5/32341 ,  H01S2301/173 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

    摘要： The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy.

    摘要翻译： 本发明涉及一种用于制造包括半导体材料的结构的方法，包括：a）注入一种或多种离子物质以形成在半导体材料的衬底中限定至少一个种子层的弱化区域，b）在步骤之前或之后形成 a），在半导体材料中的衬底上的至少一个金属层，c）将至少一个金属层与转移衬底组装，然后在弱化区域处将植入的衬底压裂，d）在半导体材料中形成至少一层， 所述至少一个种子层，例如通过外延生长。

    HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS
    4.
    发明申请
    HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS 有权
    电子元件，光电或光伏组件的结构

    公开(公告)号：US20120241821A1

    公开(公告)日：2012-09-27

    申请号：US13513151

    申请日：2010-12-01

    申请人： Jean-Marc Bethoux ,  Fabrice Letertre ,  Chris Werkhoven ,  Ionut Radu ,  Oleg Kononchuck

    发明人： Jean-Marc Bethoux ,  Fabrice Letertre ,  Chris Werkhoven ,  Ionut Radu ,  Oleg Kononchuck

    IPC分类号： H01L29/205 ,  H01L21/205 ,  C30B23/02 ,  B32B15/02 ,  B32B18/00

    CPC分类号： H01L21/187 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10−3 ohm·cm and a thermal conductivity of greater than 100 W·m−1·K−1, a bonding layer, a first seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, a second seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and an active layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm2.

    摘要翻译： 一种异质结构，其依次包括具有小于10-3欧姆·厘米的电阻率和大于100W·m-1·K-1的导热率的材料的支撑基板，接合层，第一 组成为Al x In y Ga（1-xy）N的单晶材料的第二晶种层和组成为Al x In y Ga（1-xy）N的单晶材料的有源层的组成为Al x In y Ga（1-xy）N的单晶材料的籽晶层， N，并且以3至100微米的厚度存在。 支撑衬底，结合层和第一种子层的材料在大于750℃的温度下是难熔的，活性层和第二种子层的晶格参数差异小于0.005，活性层 无裂纹，并且异质结构在接合层和第一种子层之间具有小于或等于0.1欧姆·cm 2的比接触电阻。

    Heterostructure for electronic power components, optoelectronic or photovoltaic components
    6.
    发明授权
    Heterostructure for electronic power components, optoelectronic or photovoltaic components 有权
    电子元件的异质结构，光电或光电元件

    公开(公告)号：US08759881B2

    公开(公告)日：2014-06-24

    申请号：US13513151

    申请日：2010-12-01

    申请人： Jean-Marc Bethoux ,  Fabrice Letertre ,  Chris Werkhoven ,  Ionut Radu ,  Oleg Kononchuck

    发明人： Jean-Marc Bethoux ,  Fabrice Letertre ,  Chris Werkhoven ,  Ionut Radu ,  Oleg Kononchuck

    IPC分类号： H01L31/06

    CPC分类号： H01L21/187 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10−3 ohm·cm and a thermal conductivity of greater than 100 W·m−1·K−1, a bonding layer, a first seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, a second seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and an active layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm2.

    摘要翻译： 一种异质结构，其依次包括具有小于10-3欧姆·厘米的电阻率和大于100W·m-1·K-1的导热率的材料的支撑基板，接合层，第一 组成为Al x In y Ga（1-xy）N的单晶材料的第二晶种层和组成为Al x In y Ga（1-xy）N的单晶材料的有源层的组成为Al x In y Ga（1-xy）N的单晶材料的籽晶层， N，并且以3至100微米的厚度存在。 支撑衬底，结合层和第一种子层的材料在大于750℃的温度下是难熔的，活性层和第二种子层的晶格参数差异小于0.005，活性层 无裂纹，并且异质结构在接合层和第一种子层之间具有小于或等于0.1欧姆·cm 2的比接触电阻。