公开(公告)号：US06294016B1

公开(公告)日：2001-09-25

申请号：US09421028

申请日：1999-10-20

Applicant: Sang Woo Kim ,  Ji Myon Lee ,  Kwang Soon Ahn ,  Rae Man Park ,  Ja Soon Jang ,  Seong Ju Park

Inventor： Sang Woo Kim ,  Ji Myon Lee ,  Kwang Soon Ahn ,  Rae Man Park ,  Ja Soon Jang ,  Seong Ju Park

IPC: C30B110

CPC classification number: C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/3245 ,  H01L33/007 ,  H01L33/0095

Abstract: Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.

Abstract translation: 公开了通过组合使用氮化和RTA（快速热退火）制造电性和光学性能优异的高导电性p型GaN基薄膜的方法。 通过使用MOCVD法，将GaN基外延层生长至期望的厚度，同时用氢气载体用Mg掺杂剂掺杂。 将这样得到的膜用氮等离子体和RTA组合进行氮化。 p型GaN基薄膜具有高的空穴浓度以及低电阻率，因此可以在需要高电，光，热和结构性能的情况下使用。 该方法可用于制造蓝/白LED，激光二极管和其他电子设备。

公开(公告)号：US07179669B2

公开(公告)日：2007-02-20

申请号：US11414644

申请日：2006-04-27

Applicant: Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

Inventor： Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

IPC: H01L21/00

CPC classification number: H01S5/10 ,  G02B6/12004 ,  G02B6/124 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0607 ,  H01S5/06255 ,  H01S5/0654 ,  H01S5/101 ,  H01S5/1025 ,  H01S5/1082 ,  H01S5/12 ,  H01S5/1212 ,  H01S5/1237 ,  H01S5/1243 ,  H01S5/125 ,  H01S5/14

Abstract: A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.

Abstract translation: 公开了一种包括法布里 - 珀罗滤波器和电极阵列的可调谐半导体激光器。 空腔中的光束的传播方向可以连续地向电极施加电场或电流，并且可以通过腔内激光束的角度的连续移动在宽波长带上连续执行调谐。

公开(公告)号：US07130325B2

公开(公告)日：2006-10-31

申请号：US10749043

申请日：2003-12-29

Applicant: Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

Inventor： Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

IPC: H01S5/00 ,  H01S3/08

CPC classification number: H01S5/06256 ,  H01S5/028 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125 ,  H01S5/2205 ,  H01S5/227

Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.

Abstract translation: 本发明涉及具有能够调谐波长的结构的半导体激光器，其中采样光栅分布反馈SG-DFB结构部分和采样光栅分布布拉格反射器SG-DBR结构部分被集成。 在本发明中，折射率根据SG-DFB结构部分和SG-DBR结构部分中的相位控制区域的电流而变化，由此可以连续或不连续地调谐波长。 因此，在这种波长可调谐半导体激光器中，其结构相对简单，对制造和批量生产半导体激光器相对有用。 此外，这种波长可调谐半导体激光器具有优异的输出光学效率，同时可以调谐宽带的波长。

公开(公告)号：US07065108B2

公开(公告)日：2006-06-20

申请号：US10744457

申请日：2003-12-22

Applicant: Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

Inventor： Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

IPC: H01S3/10

CPC classification number: H01S5/10 ,  G02B6/12004 ,  G02B6/124 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0607 ,  H01S5/06255 ,  H01S5/0654 ,  H01S5/101 ,  H01S5/1025 ,  H01S5/1082 ,  H01S5/12 ,  H01S5/1212 ,  H01S5/1237 ,  H01S5/1243 ,  H01S5/125 ,  H01S5/14

Abstract: A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.

Abstract translation: 公开了一种包括法布里 - 珀罗滤波器和电极阵列的可调谐半导体激光器。 空腔中的光束的传播方向可以连续地向电极施加电场或电流，并且可以通过腔内激光束的角度的连续移动在宽波长带上连续执行调谐。