Schottky diode with diamond rod and method for manufacturing the same
    1.
    发明授权
    Schottky diode with diamond rod and method for manufacturing the same 有权
    具有金刚石棒的肖特基二极管及其制造方法

    公开(公告)号:US08309968B2

    公开(公告)日:2012-11-13

    申请号:US12847078

    申请日:2010-07-30

    CPC classification number: H01L29/872 H01L29/1602 H01L29/66143

    Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.

    Abstract translation: 本发明涉及具有金刚石棒的肖特基二极管,其包括:在其上形成栅极层的衬底; 设置在所述栅极层上的图案化绝缘层,其中所述图案化绝缘层包括第一接触区域和第二接触区域; 设置在所述图案化绝缘层上的金刚石棒,其中所述金刚石棒的第一端连接到所述第一接触区域,所述金刚石棒的第二端连接到所述第二接触区域; 第一电极对应于图案化绝缘层的第一接触区域,并覆盖金刚石棒的第一端; 以及对应于图案化绝缘层的第二接触区域并覆盖金刚石棒的第二端的第二电极及其制造方法。

    SCHOTTKY DIODE WITH DIAMOND ROD AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SCHOTTKY DIODE WITH DIAMOND ROD AND METHOD FOR MANUFACTURING THE SAME 有权
    肖特基二极管与金刚石棒及其制造方法

    公开(公告)号:US20110297962A1

    公开(公告)日:2011-12-08

    申请号:US12847078

    申请日:2010-07-30

    CPC classification number: H01L29/872 H01L29/1602 H01L29/66143

    Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.

    Abstract translation: 本发明涉及具有金刚石棒的肖特基二极管,其包括:在其上形成栅极层的衬底; 设置在所述栅极层上的图案化绝缘层,其中所述图案化绝缘层包括第一接触区域和第二接触区域; 设置在所述图案化绝缘层上的金刚石棒,其中所述金刚石棒的第一端连接到所述第一接触区域,所述金刚石棒的第二端连接到所述第二接触区域; 第一电极对应于图案化绝缘层的第一接触区域,并覆盖金刚石棒的第一端; 以及对应于图案化绝缘层的第二接触区域并覆盖金刚石棒的第二端的第二电极及其制造方法。

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