VAPOR PHASE SELF-ASSEMBLED MONOLAYER COATING APPARATUS
    2.
    发明申请
    VAPOR PHASE SELF-ASSEMBLED MONOLAYER COATING APPARATUS 审中-公开
    蒸气相自组装单层涂装装置

    公开(公告)号:US20110083607A1

    公开(公告)日:2011-04-14

    申请号:US12996326

    申请日:2009-06-04

    IPC分类号: C23C16/455

    摘要: Provided is a vapor phase self-assembled monolayer (SAM) coating apparatus having a small volume and reduced manufacturing costs. The apparatus includes: a chamber for providing space in which at least one substrate is mounted; one or more injection apparatuses, installed at a side of the chamber and in the form of an injector; and one or more supply units for supplying a liquid precursor into the precursor injection apparatus.

    摘要翻译: 提供了一种具有体积小且制造成本降低的气相自组装单层(SAM)涂布装置。 该装置包括:用于提供空间的室,其中安装有至少一个基板; 一个或多个注射装置,安装在腔室的一侧并以喷射器的形式; 以及用于将液体前体供应到前体注入装置中的一个或多个供应单元。

    Slurry for use in metal-chemical mechanical polishing and preparation method thereof
    4.
    发明申请
    Slurry for use in metal-chemical mechanical polishing and preparation method thereof 审中-公开
    用于金属化学机械抛光的浆料及其制备方法

    公开(公告)号:US20060157671A1

    公开(公告)日:2006-07-20

    申请号:US11326369

    申请日:2006-01-06

    IPC分类号: C09K13/00

    摘要: The present invention relates to a slurry for use in metal chemical-mechanical polishing (CMP) and a preparation method thereof. More particularly, the invention relates to a slurry for use in metal CMP, in which iron ions or divalent or higher valent metal ions are physico-chemically adsorbed on colloidal silica particles in the form of particles by a reduction, hydrolysis, impregnation or precipitation method, as well as a preparation method thereof. The slurry useful for metal CMP prepared according to the present invention has a uniform particle size distribution, and shows increased efficiencies as an oxidation catalyst and polishing slurry chemically adsorbed with metal particles, as compared to the prior metal CMP slurry distributed with metal ions. Also, the inventive slurry has long-term storage stability, since it does not show coagulation and precipitation phenomena even after it is stored for more than one year without a dispersant or a dispersion stabilizer. Furthermore, the prior fumed silica contains a large amount of environment-harmful substances for distribution stabilization, such as surfactants and amine compounds, whereas the inventive colloidal silica contains no environment-harmful substances as described above, and thus, is eco-friendly.

    摘要翻译: 本发明涉及一种用于金属化学机械抛光(CMP)的浆料及其制备方法。 更具体地说,本发明涉及一种用于金属CMP的浆料,其中铁离子或二价或更高价金属离子通过还原,水解,浸渍或沉淀法物理化学吸附在颗粒形式的胶体二氧化硅颗粒上 ,以及其制备方法。 与用金属离子分布的现有金属CMP浆料相比,用于根据本发明制备的金属CMP的浆料具有均匀的粒度分布,并且显示出作为氧化催化剂和与金属颗粒化学吸附的抛光浆料的效率提高。 此外,本发明的浆料具有长期的储存稳定性,因为即使在没有分散剂或分散稳定剂的情况下储存一年以上也不会出现凝结和沉淀现象。 此外,现有的热解法二氧化硅含有大量用于分布稳定化的环境有害物质,例如表面活性剂和胺化合物,而本发明的胶态二氧化硅不含有如上所述的环境有害物质,因此是环保的。

    Slurry recycling system and method for CMP apparatus
    5.
    发明授权
    Slurry recycling system and method for CMP apparatus 失效
    用于CMP设备的浆料回收系统和方法

    公开(公告)号:US06866784B2

    公开(公告)日:2005-03-15

    申请号:US10311274

    申请日:2001-06-27

    IPC分类号: B24B37/04 B24B57/02 B01D61/00

    摘要: A slurry recycling system for use in a chemical mechanical polishing (CMP) apparatus for polishing a workpiece by using a slurry containing an abrasive, a pH agent and a deionized water is provided. The slurry recycling system includes a slurry collection tank for storing the slurry used in the CMP apparatus as a recyclable slurry; an ultra filter for separating, from the recyclable slurry, a fluid ingredient containing the pH agent and the deionized water and the abrasive to allow the abrasive to be reintroduced into the slurry collection tank; and a reverse osmosis filter for separating, from the fluid ingredient, the pH agent and the deionized water to allow the pH agent to be reintroduced into the slurry collection tank and to allow the deionized water to be discharged out.

    摘要翻译: 提供了一种用于通过使用含有研磨剂,pH剂和去离子水的浆料抛光工件的化学机械抛光(CMP)设备中的浆料循环系统。 浆料回收系统包括用于将用于CMP设备中的浆料作为可再循环浆料储存的浆料收集罐; 超滤器,用于从可再循环浆料中分离含有pH剂和去离子水和研磨剂的流体成分,以使研磨剂重新引入浆料收集罐中; 以及反渗透过滤器,用于从流体成分中分离pH剂和去离子水,以使pH剂重新引入浆料收集罐中,并允许去离子水被排出。

    De-ionized water/ozone rinse post-hydrofluoric processing for the
prevention of silicic acid residue
    6.
    发明授权
    De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue 失效
    去离子水/臭氧冲洗后氢氟酸处理,以防止硅酸残渣

    公开(公告)号:US5803980A

    公开(公告)日:1998-09-08

    申请号:US725446

    申请日:1996-10-04

    CPC分类号: H01L21/02052 H01L21/31111

    摘要: One embodiment of the instant invention is a method of preventing the formation of silicic acid on exposed silicon of an electronic device formed on a silicon wafer and having silicon features, the method comprising: removing a portion of oxide (step 302) formed on the silicon wafer thereby exposing at least some portion of the silicon substrate or the silicon features; cleaning the silicon wafer by subjecting the silicon wafer to an ozonated solution (step 304), preferably deionized water; and drying the silicon wafer (step 306). Preferably, a thin oxide is formed on the silicon wafer during the step of subjecting the wafer to the ozonated solution. The thin oxide is, preferably, on the order of approximately 6 to 20 .ANG. thick. After removing said portions of oxide and thereby exposing portions of said silicon wafer and/or silicon feature, the exposed silicon becomes hydrophobic. However, after the exposed silicon is subjected to the ozonated solution, the silicon wafer becomes hydrophilic--thereby preventing the formation of silicic acid on the silicon wafer or the silicon features.

    摘要翻译: 本发明的一个实施方案是一种防止在硅晶片上形成并具有硅特征的电子器件的暴露硅上形成硅酸的方法,该方法包括:除去形成在硅上的一部分氧化物(步骤302) 从而暴露硅衬底或硅特征的至少一部分; 通过使硅晶片经受臭氧化溶液(步骤304),优选去离子水来清洁硅晶片; 并干燥硅晶片(步骤306)。 优选地,在将晶片经受臭氧化溶液的步骤期间,在硅晶片上形成薄氧化物。 优选地,薄氧化物的厚度约为6至20埃。 在去除氧化物的所述部分并且由此暴露所述硅晶片和/或硅特征的部分之后,暴露的硅变得疏水。 然而,在暴露的硅经受臭氧化溶液之后,硅晶片变得亲水,从而防止在硅晶片或硅特征上形成硅酸。