公开(公告)号：US20120178206A1

公开(公告)日：2012-07-12

申请号：US13424957

申请日：2012-03-20

申请人： Ju-Il Lee

发明人： Ju-Il Lee

IPC分类号： H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.

摘要翻译： 一种制造CMOS图像传感器的方法，包括：通过外延生长半导体衬底的上部来制备其中并入有p型外延层的半导体衬底; 在所述半导体衬底的一个预定位置中形成像素阵列，所述像素阵列具有多个晶体管和其中的光电二极管，其中每个晶体管采用厚度范围从-40到90的栅极绝缘体; 以及在所述半导体衬底的另一个预定位置中形成逻辑电路，所述逻辑电路具有至少一个晶体管，其中所述晶体管采用厚度范围为从...的栅极绝缘体。

公开(公告)号：US07691663B2

公开(公告)日：2010-04-06

申请号：US11657908

申请日：2007-01-24

申请人： Ju-Il Lee

发明人： Ju-Il Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.

摘要翻译： 一种制造CMOS图像传感器的方法，包括：通过外延生长半导体衬底的上部来制备其中并入有p型外延层的半导体衬底; 在所述半导体衬底的一个预定位置中形成像素阵列，所述像素阵列具有多个晶体管和其中的光电二极管，其中每个晶体管采用厚度范围从-40到90的栅极绝缘体; 以及在所述半导体衬底的另一个预定位置中形成逻辑电路，所述逻辑电路具有至少一个晶体管，其中所述晶体管采用厚度范围为从...的栅绝缘体。

公开(公告)号：US20060192250A1

公开(公告)日：2006-08-31

申请号：US11236047

申请日：2005-09-26

申请人： Ju-Il Lee

发明人： Ju-Il Lee

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor and a method for fabricating the same are provided. The CMOS image sensor includes: a pixel region provided with a plurality of unit pixels, each including a buried photodiode and a floating diffusion region; and a logic region provided with CMOS devices for processing data outputted from the unit pixels, wherein a self-aligned silicide layer is formed on gate electrodes and source/drain regions of the CMOS devices in the logic region while a self-aligned silicide blocking layer is formed over the pixel region.

摘要翻译： 提供互补金属氧化物半导体（CMOS）图像传感器及其制造方法。 CMOS图像传感器包括：具有多个单位像素的像素区域，每个像素区域包括掩埋光电二极管和浮动扩散区域; 以及设置有用于处理从单位像素输出的数据的CMOS器件的逻辑区域，其中自对准硅化物层形成在逻辑区域中的CMOS器件的栅极电极和源极/漏极区域上，而自对准硅化物阻挡层 形成在像素区域上。

公开(公告)号：US20060148232A1

公开(公告)日：2006-07-06

申请号：US11291383

申请日：2005-11-30

申请人： Kyung-Lak Lee ,  Ju-Il Lee

发明人： Kyung-Lak Lee ,  Ju-Il Lee

IPC分类号： H01L21/44 ,  H01L21/461

CPC分类号： H01L27/1469 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/00014

摘要： A method for fabricating a module of a semiconductor chip is provided. The method includes the steps of: forming a bump on a substrate provided with a pad; forming a protection layer over the bump; performing a grinding process on a rear surface of the substrate to reduce a thickness of the substrate; and exposing the bump by removing the protection layer.

摘要翻译： 提供一种制造半导体芯片的模块的方法。 该方法包括以下步骤：在设置有垫的基板上形成凸块; 在凸起上形成保护层; 在基板的后表面上进行研磨处理以减小基板的厚度; 并通过去除保护层来暴露凸块。

公开(公告)号：US20050130071A1

公开(公告)日：2005-06-16

申请号：US10877317

申请日：2004-06-25

申请人： Ju-Il Lee

发明人： Ju-Il Lee

IPC分类号： G02B3/00 ,  G03C5/00 ,  H01L21/00 ,  H01L27/14 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14627

摘要： The present invention relates to a method for fabricating an inorganic microlens. The method includes the steps of: depositing an inorganic layer on a substrate; forming a hemispherical photoresist pattern on the inorganic layer; and performing a blanket etch-back process to thereby form a hemispherical inorganic microlens.

摘要翻译： 本发明涉及无机微透镜的制造方法。 该方法包括以下步骤：在衬底上沉积无机层; 在无机层上形成半球形光刻胶图案; 并进行毯式回蚀处理，从而形成半球形无机微透镜。

公开(公告)号：US06369417B1

公开(公告)日：2002-04-09

申请号：US09931119

申请日：2001-08-16

申请人： Ju-Il Lee

发明人： Ju-Il Lee

IPC分类号： H01L31062

CPC分类号： H01L27/14692 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627

摘要： A CMOS image sensor fabrication method that is capable of preventing a surface of a metal line from being damaged or contaminated is provided. The formed CMOS image sensor includes: a semiconductor structure, wherein the semiconductor structure includes a unit pixel area and a pad area; a metal line formed on the pad area, wherein a portion of the metal line is exposed; a passivation layer formed on the unit pixel area and on the metal line such that the exposed portion is left exposed; a planarized photoresist formed on a portion of the passivation layer; a micro-lens formed on a portion of the planarized photoresist; and an oxide layer formed on the entire formed structure such that the exposed portion is left exposed.

摘要翻译： 提供了能够防止金属线的表面受到损伤或污染的CMOS图像传感器的制造方法。 形成的CMOS图像传感器包括：半导体结构，其中半导体结构包括单位像素区域和焊盘区域; 形成在所述焊盘区域上的金属线，其中所述金属线的一部分被暴露; 钝化层，其形成在所述单位像素区域和所述金属线上，使得所述暴露部分露出; 形成在所述钝化层的一部分上的平坦化光致抗蚀剂; 形成在平坦化光致抗蚀剂的一部分上的微透镜; 以及形成在整个形成结构上的氧化物层，使得露出部分露出。

公开(公告)号：US06180969B2

公开(公告)日：2001-01-30

申请号：US09258307

申请日：1999-02-26

申请人： Woodward Yang ,  Ju Il Lee ,  Nan Yi Lee

发明人： Woodward Yang ,  Ju Il Lee ,  Nan Yi Lee

IPC分类号： H01L31062

CPC分类号： H01L27/14609 ,  H01L27/1443

摘要： A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active region; a N− region formed within the P-epi layer, wherein the first impurity region is apart from the isolation layer; and a P0 region of the conductive type formed beneath a surface of the P-epi layer and on the N− region, wherein a width of the P0 region is wider than that of the N− region so that a portion of the P0 region is formed on the P-epi layer, whereby the P0 region has the same potential as the P-epi layer.

摘要翻译： 根据本发明的CMOS图像传感器具有在1.2-4.5V的偏压下完全耗尽的低电压光电二极管。 光电二极管包括：P-epi层; 将所述P外延层划分为场区域和有源区域的场氧化物层; 形成在所述P外延层内的N-区域，其中所述第一杂质区域与所述隔离层分离; 以及形成在P外延层的表面的N区域的下方的导电类型的P0区域，其中P0区域的宽度比N区域宽，使得P0区域的一部分为 形成在P外延层上，由此P0区域具有与P外延层相同的电位。

公开(公告)号：US6088112A

公开(公告)日：2000-07-11

申请号：US344823

申请日：1999-06-25

申请人： Ju Il Lee ,  Nan Yi Lee

发明人： Ju Il Lee ,  Nan Yi Lee

IPC分类号： G01R31/00 ,  G01J3/51 ,  G01B11/00

CPC分类号： G01J3/51

摘要： The present invention relates to an image sensor; and, more particularly, to an image sensor having test patterns for measuring characteristics of color filters. In accordance with the present invention, the separate quartz wafer or glass wafer is not required. Therefore, unnecessary cost can be saved and high price of light measuring instrument is not necessary any longer, because it is possible to measure the characteristic of exact color filter on substantial wafer. Moreover, since the measurement of color filter is available on the silicon wafer where substantial image sensor is manufactured, the results of measurement are much more exact and it is possible to promptly apply the results to successive wafer or lot. Thus, it contributes to the improvement of yield of the image sensors.

摘要翻译： 图像传感器技术领域本发明涉及一种图像传感器; 更具体地说，涉及具有用于测量滤色器特性的测试图案的图像传感器。 根据本发明，不需要单独的石英晶片或玻璃晶片。 因此，可以节省不必要的成本，并且不需要高价格的光测量仪器，因为可以测量基本晶片上的精确滤色器的特性。 此外，由于滤光片的测量在制造基本图像传感器的硅晶片上可用，因此测量结果更精确，并且可以将结果及时地应用于连续的晶片或批次。 因此，有助于提高图像传感器的产量。

公开(公告)号：US07358552B2

公开(公告)日：2008-04-15

申请号：US11236047

申请日：2005-09-26

申请人： Ju-Il Lee

发明人： Ju-Il Lee

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor and a method for fabricating the same are provided. The CMOS image sensor includes: a pixel region provided with a plurality of unit pixels, each including a buried photodiode and a floating diffusion region; and a logic region provided with CMOS devices for processing data outputted from the unit pixels, wherein a self-aligned silicide layer is formed on gate electrodes and source/drain regions of the CMOS devices in the logic region while a self-aligned silicide blocking layer is formed over the pixel region.

摘要翻译： 提供互补金属氧化物半导体（CMOS）图像传感器及其制造方法。 CMOS图像传感器包括：具有多个单位像素的像素区域，每个像素区域包括掩埋光电二极管和浮动扩散区域; 以及设置有用于处理从单位像素输出的数据的CMOS器件的逻辑区域，其中自对准硅化物层形成在逻辑区域中的CMOS器件的栅极电极和源极/漏极区域上，而自对准硅化物阻挡层 形成在像素区域上。

公开(公告)号：US20110108709A1

公开(公告)日：2011-05-12

申请号：US12956975

申请日：2010-11-30

申请人： Sung-Hyung Park ,  Ju-IL Lee

发明人： Sung-Hyung Park ,  Ju-IL Lee

IPC分类号： G01J1/44 ,  H01L21/36

CPC分类号： H01L27/14603 ,  H01L27/14629 ,  H01L27/1464

摘要： A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

摘要翻译： 背面照明图像传感器包括形成在半导体衬底的顶表面下方的光电二极管，用于接收从半导体衬底的背面照射的光以产生光电电荷;反射门，形成在光电二极管的上表面上 半导体衬底，用于反射从衬底的背面照射的光并接收偏置以控制光电二极管的耗尽区;以及传输门，用于将光电荷从光电二极管传送到像素的感测节点。