Abstract:
A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.
Abstract:
A display substrate includes an insulation substrate, a gate line formed on the insulation substrate, a data line formed on the insulation substrate and crossing the gate line, a switching element formed on the insulation substrate and electrically connected to the gate line and the data line, and a pixel electrode formed on the insulation substrate. The pixel electrode is electrically connected to the switching element and includes a reflective electrode layer which reflects light and an absorption electrode layer which absorbs light.
Abstract:
A display apparatus includes a substrate; a first insulating layer formed on the substrate and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features; a first storage electrode overlaying the upper surface and a side surface of the first insulating layer and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features, each concave feature of the first storage electrode overlying at least one respective concave feature of the first insulating layer, each convex feature of the first storage electrode overlying at least one respective convex feature of the first insulating layer; a second insulating layer formed on the first storage electrode; and a second storage electrode formed on the second insulating layer which separates the second storage electrode from the underlying first storage electrode.
Abstract:
A display apparatus includes a substrate; a first insulating layer formed on the substrate and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features; a first storage electrode overlaying the upper surface and a side surface of the first insulating layer and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features, each concave feature of the first storage electrode overlying at least one respective concave feature of the first insulating layer, each convex feature of the first storage electrode overlying at least one respective convex feature of the first insulating layer; a second insulating layer formed on the first storage electrode; and a second storage electrode formed on the second insulating layer which separates the second storage electrode from the underlying first storage electrode.
Abstract:
A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity.
Abstract:
A thin film transistor array panel according to the present invention includes: a gate line formed on a substrate and including a gate electrode; a gate insulating layer formed on the gate electrode; a mold layer formed on the gate insulating layer and having an opening overlapping the gate electrode; a semiconductor layer filled in the opening; a data line formed on the mold layer and including a source electrode contacted with the semiconductor layer; a drain electrode contacted with the semiconductor layer on the mold layer and facing the source electrode; a passivation layer formed on the data line and the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode, wherein the passivation layer, the source electrode, and the drain electrode have at least one through-hole connected to the opening.
Abstract:
A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.
Abstract:
A thin film transistor display substrate comprises a base substrate on which a pixel area including a first reflection area and a second reflection area is defined. A gate line formed on the base substrate and a data line formed on the base substrate. The data line is insulated from and intersected with the gate line to define the pixel area. A thin film transistor is formed in the pixel area and connected to the gate line and the data line. A first reflection layer is formed on the base substrate and corresponds to the first reflection area. A color filter is formed on the first reflection layer and corresponds to the pixel area. A second reflection layer is formed on the color filter and corresponds to the second reflection area. A pixel electrode is formed on the color filter and is electrically connected to the thin film transistor.
Abstract:
An electrophoretic display includes a thin film transistor array panel including a first substrate, a gate line on the first substrate having a gate electrode, a gate insulating layer on the gate line, a semiconductor on the gate insulating layer, a data line including a source electrode and a drain electrode on the semiconductor or the gate insulating layer, a passivation layer covering the data line and having a first contact hole exposing the drain electrode, a storage electrode on the passivation layer, a color filter on the storage electrode and having a second contact hole exposing the first contact hole, and a pixel electrode on the color filter and connected to the drain electrode; a common electrode panel facing the thin film transistor array panel, and including a common electrode, and a electrophoretic member between the pixel electrode and the common electrode.
Abstract:
Disclosed is a display substrate including a pixel electrode and a thin film transistor formed thereon. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode, and the pixel electrode is formed by extending the drain electrode thereby reducing the required number of process steps and photo masks.