公开(公告)号：US5365099A

公开(公告)日：1994-11-15

申请号：US202856

申请日：1994-02-25

申请人： John P. Phipps ,  Stephen P. Robb ,  Judy L. Sutor ,  Lewis E. Terry

发明人： John P. Phipps ,  Stephen P. Robb ,  Judy L. Sutor ,  Lewis E. Terry

IPC分类号： H01L29/866 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H01L29/861 ,  H03K17/08 ,  H03K17/16 ,  H01L29/10

CPC分类号： H01L29/7811 ,  H01L21/8221 ,  H01L27/0255 ,  H01L27/0688 ,  H01L29/7803 ,  H01L29/7808

摘要： A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes between the drain and the gate of the semiconductor device. The diodes protect the device by clamping the device's sustaining voltage to the total avalanche voltage of the diode. The device will dissipate any excessive energy in the conduction mode rather than in the more stressful avalanche mode. In addition, the plurality of diodes will provide for a temperature compensated sustaining voltage of the semiconductor device. The plurality of diodes are formed back-to-back in polysilicon. The positive temperature coefficient of the avalanching junction of each diode pair is compensated for by the negative temperature coefficient of the forward biased junction.

摘要翻译： 通过在半导体器件的漏极和栅极之间集成多个温度补偿电压参考二极管来提供具有改进的保护方案和温度补偿维持电压的半导体器件。 二极管通过将器件的维持电压钳位到二极管的总雪崩电压来保护器件。 该装置将在导通模式中消耗任何过多的能量，而不是在更紧张的雪崩模式下消耗。 此外，多个二极管将提供半导体器件的温度补偿维持电压。 在多晶硅中背对背地形成多个二极管。 每个二极管对的雪崩结的正温度系数由正向偏置结的负温度系数补偿。

公开(公告)号：US4701718A

公开(公告)日：1987-10-20

申请号：US509574

申请日：1983-06-30

申请人： Robert S. Wrathall ,  Judy L. Sutor

发明人： Robert S. Wrathall ,  Judy L. Sutor

IPC分类号： H03F1/34 ,  H03F1/08 ,  H03F1/38 ,  H03F3/18 ,  H03F3/16 ,  H03F3/45

CPC分类号： H03F1/086

摘要： A CMOS operational amplifier comprises an input stage for receiving first and second potentials, a bias stage and first and second gain stages. In order to improve the frequency response, capacitors are employed to provide positive feedback. The biasing stage maintains the output in its active region, and avoids the necessity of external biasing.

摘要翻译： CMOS运算放大器包括用于接收第一和第二电位的输入级，偏置级和第一和第二增益级。 为了提高频率响应，采用电容器提供正反馈。 偏置级将输出保持在其有源区域，并避免了外部偏置的必要性。

公开(公告)号：US5631187A

公开(公告)日：1997-05-20

申请号：US188975

申请日：1994-01-31

申请人： John P. Phipps ,  Stephen P. Robb ,  Judy L. Sutor ,  Lewis E. Terry

发明人： John P. Phipps ,  Stephen P. Robb ,  Judy L. Sutor ,  Lewis E. Terry

IPC分类号： H01L29/866 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H01L29/861 ,  H03K17/08 ,  H03K17/16 ,  H01L21/70

CPC分类号： H01L29/7811 ,  H01L21/8221 ,  H01L27/0255 ,  H01L27/0688 ,  H01L29/7803 ,  H01L29/7808

摘要： A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes between the drain and the gate of the semiconductor device. The diodes protect the device by clamping the device's sustaining voltage to the total avalanche voltage of the diode. The device will dissipate any excessive energy in the conduction mode rather than in the more stressful avalanche mode. In addition, the plurality of diodes will provide for a temperature compensated sustaining voltage of the semiconductor device. The plurality of diodes are formed back-to-back in polysilicon. The positive temperature coefficient of the avalanching junction of each diode pair is compensated for by the negative temperature coefficient of the forward biased junction.

摘要翻译： 通过在半导体器件的漏极和栅极之间集成多个温度补偿电压参考二极管来提供具有改进的保护方案和温度补偿维持电压的半导体器件。 二极管通过将器件的维持电压钳位到二极管的总雪崩电压来保护器件。 该装置将在导通模式中消耗任何过多的能量，而不是在更紧张的雪崩模式下消耗。 此外，多个二极管将提供半导体器件的温度补偿维持电压。 在多晶硅中背对背地形成多个二极管。 每个二极管对的雪崩结的正温度系数由正向偏置结的负温度系数补偿。