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    Electrolytic processing apparatus and electrolytic processing method
    1.
    发明申请
    Electrolytic processing apparatus and electrolytic processing method 审中-公开
    电解处理装置及电解处理方法

    公开(公告)号：US20100032315A1

    公开(公告)日：2010-02-11

    申请号：US12458956

    申请日：2009-07-28

    申请人： Junko Mine ,  Akira Susaki ,  Hiroyuki Kanda ,  Tsutomu Nakada

    发明人： Junko Mine ,  Akira Susaki ,  Hiroyuki Kanda ,  Tsutomu Nakada

    IPC分类号： C25F3/02

    CPC分类号： C25F5/00 ,  H01L21/02068 ,  H01L21/76861 ,  H01L21/76873

    摘要： An electrolytic processing apparatus, prior to carrying out plating directly on, e.g., a ruthenium film of a substrate using the ruthenium film as a seed layer, can securely remove a passive layer formed on a surface of the ruthenium film even when the substrate is a large-sized high-resistance substrate, such as a 300-mm wafer, thereby reducing the terminal effect during the subsequent plating, improving the quality of a plated film and enabling filling of a void-free plated film into a fine interconnect pattern. The electrolytic processing apparatus includes: an anode disposed opposite a seed layer of a noble metal or a high-melting metal, formed on a substrate; a porous body impregnated with an electrolytic solution, disposed in a space, filled with the electrolytic solution, between the substrate and the anode; and a control section for controlling an electric field on a surface of the seed layer so that a reduction reaction takes place in the seed layer, thereby electrolytically and electrochemically removing a passive layer formed in the surface of the seed layer.

    摘要翻译： 电解处理装置在使用钌膜作为种子层的基板钌膜直接进行电镀之前，可以可靠地除去形成在钌膜的表面上的钝化层，即使当基板为 大尺寸高电阻基板，例如300mm晶片，从而降低了后续电镀期间的端子效应，提高了镀膜的质量，并且能够将无空隙的镀膜填充到精细的互连图案中。 电解处理装置包括：在基板上形成的与贵金属或高熔点金属的种子层相对设置的阳极; 浸渍有电解液的多孔体，设置在填充有电解液的空间中，在基板和阳极之间; 以及控制部分，用于控制种子层表面上的电场，使得种子层中发生还原反应，从而电解和电化学去除形成在籽晶层表面的钝化层。

    Substrate Processing Apparatus
    4.
    发明申请
    Substrate Processing Apparatus 审中-公开
    基板加工装置

    公开(公告)号：US20070289604A1

    公开(公告)日：2007-12-20

    申请号：US11587974

    申请日：2005-04-27

    申请人： Yukio Fukunaga ,  Akira Susaki ,  Junji Kunisawa ,  Hiroyuki Ueyama ,  Shohei Shima ,  Akira Fukunaga ,  Hideki Tateishi ,  Junko Mine

    发明人： Yukio Fukunaga ,  Akira Susaki ,  Junji Kunisawa ,  Hiroyuki Ueyama ,  Shohei Shima ,  Akira Fukunaga ,  Hideki Tateishi ,  Junko Mine

    IPC分类号： C23G1/02 ,  B08B3/00 ,  G05D23/00 ,  G05D99/00

    CPC分类号： H01L21/76838 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/67253

    摘要： To provide an apparatus and a method capable of supplying a gas containing an evaporated reducing organic compound while strictly controlling the flow rate thereof to process a surface of a metal on a substrate without causing any deterioration of various types of films forming a semiconductor element with a simple apparatus configuration. The apparatus includes a process chamber 10 for keeping a substrate W therein, the process chamber 10 being gastight, an evacuation control system 20 for controlling the pressure in the process chamber 10, and a process gas supply system 30 for supplying a process gas containing a reducing organic compound to the process chamber 10. The process gas supply system 30 has an evaporator 32 keeping liquid material of the reducing organic compound therein and having an evaporating liquid surface S, a process gas pipe 18 for directing the process gas containing the reducing organic compound evaporated in the evaporator 32 into the process chamber 10, and a throttle element 40 disposed in the process gas pipe 18 for controlling the flow rate of the process gas to be supplied to the process chamber 10 by adjusting the opening of the throttle element 40. The opening of the throttle element 40 is so set that the pressure variation in the evaporator 32 can be maintained within a prescribed range.

    摘要翻译： 提供一种能够提供含有蒸发还原性有机化合物的气体的装置和方法，同时严格控制其流速来处理基板上的金属表面，而不会导致形成半导体元件的各种类型的膜的劣化 简单的设备配置。 该装置包括用于将基板W保持在其中的处理室10，气密的处理室10，用于控制处理室10中的压力的​​抽空控制系统20以及用于提供含有 将有机化合物还原成处理室10。 工艺气体供给系统30具有：蒸发器32，其中还原有机化合物的液体材料保持在其中并具有蒸发的液体表面S;一个工艺气体管道18，用于将含有在蒸发器32中蒸发的还原性有机化合物的工艺气体引导到过程 设置在处理气体管道18中的节流元件40，用于通过调节节流元件40的开口来控制供给处理室10的处理气体的流量。 节流元件40的开度被设定为使得蒸发器32中的压力变化可以保持在规定范围内。