公开(公告)号：US20110155581A1

公开(公告)日：2011-06-30

申请号：US12977592

申请日：2010-12-23

申请人： Akira SUSAKI ,  Tsutomu Nakada ,  Hideki Tateishi

发明人： Akira SUSAKI ,  Tsutomu Nakada ,  Hideki Tateishi

IPC分类号： C25D5/10 ,  C25D3/02 ,  C25D3/38 ,  C25D3/12 ,  C25D5/34 ,  C25D5/12

CPC分类号： C25D3/38 ,  C25D3/12 ,  C25D5/38 ,  C25D5/42 ,  C25D5/44

摘要： A metal film-forming method is capable of forming a metal film on a surface of a base metal film, formed on a surface of a substrate, with sufficient adhesion to the base metal film even when a natural oxide film is formed on the surface of the base metal film. The metal film-forming method includes: preparing a substrate having a base metal film formed on a surface; and carrying out electroplating of the substrate using the base metal film as a cathode and another metal as an anode while immersing the substrate in a solution containing a metal complex and a reducing material, both dissolved in a solvent, to form a metal film, deriving from a metal contained in the metal complex, on the surface of the base metal film.

摘要翻译： 金属膜形成方法能够在形成在基板表面上的基底金属膜的表面上形成金属膜，即使当在基体金属膜的表面上形成自然氧化膜时，也能够对基底金属膜具有足够的粘合力 贱金属膜。 金属膜形成方法包括：制备在表面上形成有贱金属膜的基板; 并且使用基底金属膜作为阴极和另一种金属作为阳极进行基板的电镀，同时将基板浸入含有溶解在溶剂中的金属络合物和还原材料的溶液中以形成金属膜，得到 从包含在金属络合物中的金属在基底金属膜的表面上。

公开(公告)号：US07947156B2

公开(公告)日：2011-05-24

申请号：US11907187

申请日：2007-10-10

申请人： Hiroyuki Kanda ,  Akira Susaki ,  Satoru Yamamoto ,  Tsutomu Nakada

发明人： Hiroyuki Kanda ,  Akira Susaki ,  Satoru Yamamoto ,  Tsutomu Nakada

IPC分类号： C25D17/00

CPC分类号： C25D5/34 ,  C25D7/12 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/76861 ,  H01L21/76873

摘要： A substrate processing apparatus can carry out removal of a passive layer (ruthenium oxide) present on a surface of a ruthenium film and electroplating successively, and can reduce the terminal effect at the time of the removal of the passive layer (ruthenium oxide) from the ruthenium film. The substrate processing apparatus includes: an electrolytic processing apparatus for electrochemically removing a passive layer, formed on a surface of a ruthenium film on a substrate, by electrolytic processing with the ruthenium film as a cathode; a copper electroplating apparatus for carrying out copper electroplating on the surface of the ruthenium film on the substrate; and an apparatus frame housing the electrolytic processing apparatus and the copper electroplating apparatus.

摘要翻译： 基板处理装置可以执行存在于钌膜表面上的钝化层（氧化钌）并依次电镀，并且可以降低在从钝化层（氧化钌）中除去时的终端效应 钌膜。 基板处理装置包括：电解处理装置，用于通过用钌膜作为阴极的电解处理在基板上的钌膜的表面上电化学去除钝化层; 用于在基板上的钌膜的表面上进行铜电镀的铜电镀装置; 以及容纳电解处理装置和铜电镀装置的装置框架。

公开(公告)号：US07659312B2

公开(公告)日：2010-02-09

申请号：US11757191

申请日：2007-06-01

申请人： Tsutomu Nakada ,  Vincent J. Huber

发明人： Tsutomu Nakada ,  Vincent J. Huber

IPC分类号： A61K31/18 ,  C07C303/00

CPC分类号： A61K31/421 ,  A61K31/423 ,  A61K31/426 ,  A61K31/428 ,  A61K31/433

摘要： This invention relates an inhibitory modulator of AQP4 protein regarding its transmembrane water transport properties, wherein the modulator selectively binds to the AQP4 protein, and inhibits AQP4 mediated water transport.

摘要翻译： 本发明涉及AQP4蛋白的抑制性调节剂，涉及其跨膜水转运性质，其中调节剂选择性结合AQP4蛋白，并抑制AQP4介导的水转运。

公开(公告)号：US07543938B2

公开(公告)日：2009-06-09

申请号：US11856216

申请日：2007-09-17

申请人： Tsutomu Nakada

发明人： Tsutomu Nakada

IPC分类号： A61B3/00

CPC分类号： A61H5/00 ,  A61B3/112

摘要： An electronic image shown on a display can be shifted to the left for left eye viewing and shifted to the right for right eye viewing. A left eye shutter can be positioned over the left eye and a right eye shutter positioned over the right eye. The left eye shutter can open when the image shown on the display is shifted to the left, and the right eye shutter can open when the image shown on the display is shifted to the right, such that each eye can view the image without substantial convergence. In addition to relieving convergence, embodiments of the present invention may relieve prolonged ciliary muscle spasms that can result in pseudomyopia, and may also decrease the onset and severity of myopia, for example developmental myopia.

摘要翻译： 显示器上显示的电子图像可以向左移动以进行左眼观看，并向右移动以进行右眼观看。 左眼快门可以位于左眼上方，右眼快门位于右眼上方。 当显示器上显示的图像向左移动时，左眼快门可以打开，并且当显示器上显示的图像向右移动时，右眼快门可以打开，使得每只眼睛可以在没有显着收敛的情况下观看图像 。 除了缓解收敛之外，本发明的实施例可以减轻可导致假性近视的延长的睫状肌痉挛，并且还可以降低近视的发作和严重性，例如发育性近视。

公开(公告)号：US20090073375A1

公开(公告)日：2009-03-19

申请号：US11856216

申请日：2007-09-17

申请人： Tsutomu Nakada

发明人： Tsutomu Nakada

IPC分类号： G02C7/16

CPC分类号： A61H5/00 ,  A61B3/112

摘要： An electronic image shown on a display can be shifted to the left for left eye viewing and shifted to the right for right eye viewing. A left eye shutter can be positioned over the left eye and a right eye shutter positioned over the right eye. The left eye shutter can open when the image shown on the display is shifted to the left, and the right eye shutter can open when the image shown on the display is shifted to the right, such that each eye can view the image without substantial convergence. In addition to relieving convergence, embodiments of the present invention may relieve prolonged ciliary muscle spasms that can result in pseudomyopia, and may also decrease the onset and severity of myopia, for example developmental myopia.

摘要翻译： 显示器上显示的电子图像可以向左移动以进行左眼观看，并向右移动以进行右眼观看。 左眼快门可以位于左眼上方，右眼快门位于右眼上方。 当显示器上显示的图像向左移动时，左眼快门可以打开，并且当显示器上显示的图像向右移动时，右眼快门可以打开，使得每只眼睛可以在没有显着收敛的情况下观看图像 。 除了缓解收敛之外，本发明的实施例可以减轻可能导致假性近视的延长的睫状肌痉挛，并且还可以降低近视的发作和严重性，例如发育性近视。

公开(公告)号：US20080099340A1

公开(公告)日：2008-05-01

申请号：US11907187

申请日：2007-10-10

申请人： Hiroyuki Kanda ,  Akira Susaki ,  Satoru Yamamoto ,  Tsutomu Nakada

发明人： Hiroyuki Kanda ,  Akira Susaki ,  Satoru Yamamoto ,  Tsutomu Nakada

IPC分类号： C25D5/34 ,  C25D17/00

CPC分类号： C25D5/34 ,  C25D7/12 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/76861 ,  H01L21/76873

摘要： A substrate processing apparatus can carry out removal of a passive layer (ruthenium oxide) present on a surface of a ruthenium film and electroplating successively, and can reduce the terminal effect at the time of the removal of the passive layer (ruthenium oxide) from the ruthenium film. The substrate processing apparatus includes: an electrolytic processing apparatus for electrochemically removing a passive layer, formed on a surface of a ruthenium film on a substrate, by electrolytic processing with the ruthenium film as a cathode; a copper electroplating apparatus for carrying out copper electroplating on the surface of the ruthenium film on the substrate; and an apparatus frame housing the electrolytic processing apparatus and the copper electroplating apparatus.

摘要翻译： 基板处理装置可以执行存在于钌膜表面上的钝化层（氧化钌）并依次电镀，并且可以降低在从钝化层（氧化钌）中除去时的终端效应 钌膜。 基板处理装置包括：电解处理装置，用于通过用钌膜作为阴极的电解处理在基板上的钌膜的表面上电化学去除钝化层; 用于在基板上的钌膜的表面上进行铜电镀的铜电镀装置; 以及容纳电解处理装置和铜电镀装置的装置框架。

公开(公告)号：US20050072683A1

公开(公告)日：2005-04-07

申请号：US10816168

申请日：2004-04-02

申请人： Tsutomu Nakada ,  Tsuyoshi Sahoda ,  Koji Mishima ,  Ryoichi Kimizuka ,  Takeshi Kobayashi

发明人： Tsutomu Nakada ,  Tsuyoshi Sahoda ,  Koji Mishima ,  Ryoichi Kimizuka ,  Takeshi Kobayashi

IPC分类号： C25D3/38 ,  C25D5/18 ,  H05K3/42

CPC分类号： C25D3/38 ,  C25D5/18 ,  H05K3/423

摘要： An acid copper plating solution comprises copper ions, an organic acid or an inorganic acid, chloride ions, a high molecular weight surfactant that controls the electrodeposition reaction, and a sulfur-containing saturated organic compound that promotes the electrocoating rate. The high molecular weight surfactant comprises two or more types of surfactants with different hydrophobicities. The plating solution is used for forming a plating film on a conductor layer.

摘要翻译： 酸性铜电镀液包含铜离子，有机酸或无机酸，氯离子，控制电沉积反应的高分子量表面活性剂，以及促进电泳率的含硫饱和有机化合物。 高分子量表面活性剂包含两种或多种具有不同疏水性的表面活性剂。 电镀液用于在导体层上形成镀膜。

公开(公告)号：US20050045486A1

公开(公告)日：2005-03-03

申请号：US10885136

申请日：2004-07-07

申请人： Tsuyoshi Sahoda ,  Tsutomu Nakada ,  Koji Mishima ,  Ryoichi Kimizuka

发明人： Tsuyoshi Sahoda ,  Tsutomu Nakada ,  Koji Mishima ,  Ryoichi Kimizuka

IPC分类号： C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  H01L21/288 ,  H01L21/445 ,  H01L21/768 ,  H05K3/18 ,  H05K3/42

CPC分类号： H05K3/423 ,  C25D3/38 ,  H01L21/2885 ,  H01L21/76877

摘要： The present invention provides a plating method which can embed copper in interconnect recesses, such as vias and interconnect trenches, having an opening width or size of several tens of μm and an aspect ratio of at least 1.5. The plating method comprises: providing a substrate having interconnect recesses, whose surfaces are covered with a conductive layer, formed in a surface of the substrate; bringing the surface of the substrate into contact with a plating solution containing copper ions, an organic or inorganic acid, chloride ions, a polymeric surfactant for suppressing electrodeposition, a sulfur-containing saturated organic compound for promoting the growth of a plated film, and a nitrogen-containing polymer for flattening a surface of the plated film; and applying a voltage between the conductive layer and an anode immersed in the plating solution.

摘要翻译： 本发明提供一种电镀方法，其可以将铜嵌入诸如通路和互连沟槽的互连凹槽中，其具有几十个开口宽度或尺寸，并且纵横比至少为1.5。 电镀方法包括：提供具有互连凹槽的基板，其表面被形成在基板的表面中的导电层覆盖; 使基板的表面与含有铜离子，有机或无机酸，氯离子的电镀溶液，用于抑制电沉积的聚合物表面活性剂接触，用于促进镀膜生长的含硫饱和有机化合物，以及 用于使镀膜表面变平的含氮聚合物; 以及在所述导电层和浸在所述电镀液中的阳极之间施加电压。

公开(公告)号：US6132512A

公开(公告)日：2000-10-17

申请号：US3948

申请日：1998-01-08

申请人： Kuniaki Horie ,  Tsutomu Nakada ,  Takeshi Murakami ,  Hidenao Suzuki ,  Masahito Abe ,  Yuji Araki

发明人： Kuniaki Horie ,  Tsutomu Nakada ,  Takeshi Murakami ,  Hidenao Suzuki ,  Masahito Abe ,  Yuji Araki

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45565 ,  C30B25/14

摘要： A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.

摘要翻译： 气相膜生长装置包括用于保持基板的基板保持器，气体喷射头和辐射热屏蔽装置。 衬底保持器在其中具有衬底加热器，并且气体喷射头具有用于将材料气体朝向由衬底保持器保持的衬底喷射的气体注入表面。 辐射热屏蔽装置以与气体喷射嘴的气体注入表面相对的关系设置在衬底保持器和气体注入头之间。 基本上平面的辐射热屏蔽装置可透气并具有加热能力。

公开(公告)号：US5951923A

公开(公告)日：1999-09-14

申请号：US861516

申请日：1997-05-22

申请人： Kuniaki Horie ,  Hidenao Suzuki ,  Tsutomu Nakada ,  Fumio Kuriyama ,  Takeshi Murakami ,  Masahito Abe ,  Yuji Araki

发明人： Kuniaki Horie ,  Hidenao Suzuki ,  Tsutomu Nakada ,  Fumio Kuriyama ,  Takeshi Murakami ,  Masahito Abe ,  Yuji Araki

IPC分类号： B01D1/22 ,  C23C16/448 ,  B01F3/04

CPC分类号： B01D1/22 ,  C23C16/4481 ,  C23C16/4485 ,  Y10S261/65

摘要： A vaporizer apparatus efficiently vaporizes difficult-to-vaporize materials such as complex feed materials for producing a high dielectric or ferroelectric material. The vaporizer apparatus includes a vaporizing passage formed by a pair of opposed walls separated by a minute spacing to a liquid feed entrance provided at one end of the vaporizing passage, a vaporized feed exit provided at an opposite end of the vaporizing passage, and a heating arrangement for heating the walls to a temperature in excess of a vaporizing temperature of the liquid feed so that the liquid feed material may be guided into the vaporizing passage to be vaporized.

摘要翻译： 蒸发器装置有效地蒸发诸如用于生产高电介质或铁电材料的复合进料的难以汽化的材料。 蒸发器装置包括：由与蒸发通道的一端设置的液体进料入口分开的一对相对的壁形成的蒸发通道，设置在蒸发通道的相对端的蒸发进料口，以及加热 用于将壁加热到超过液体进料的蒸发温度的温度的布置，使得液体进料可以被引导到蒸发通道中以被蒸发。