公开(公告)号：US20120000888A1

公开(公告)日：2012-01-05

申请号：US13014807

申请日：2011-01-27

Applicant: KATSUMASA KAWASAKI ,  BRYAN LIAO

Inventor： KATSUMASA KAWASAKI ,  BRYAN LIAO

IPC: H01L21/3065 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/38 ,  H03H7/46

Abstract: Methods and apparatus for minimizing reflected radio frequency (RF) energy are provided herein. In some embodiments, an apparatus may include a first RF energy source having frequency tuning to provide a first RF energy, a first matching network coupled to the first RF energy source, one or more sensors to provide first data corresponding to a first magnitude and a first phase of a first impedance of the first RF energy, wherein the first magnitude is equal a first resistance defined as a first voltage divided by a first current and the first phase is equal to a first phase difference between the first voltage and the first current, and a controller adapted to control a first value of a first variable element of the first matching network based upon the first magnitude and to control a first frequency provided by the first RF energy source based upon the first phase.

Abstract translation: 本文提供了用于最小化反射射频（RF）能量的方法和装置。 在一些实施例中，装置可以包括具有频率调谐以提供第一RF能量的第一RF能量源，耦合到第一RF能量源的第一匹配网络，一个或多个传感器，以提供对应于第一幅度的第一数据和 所述第一RF的能量的第一阻抗的第一相位，其中所述第一幅度等于被定义为第一电压除以第一电流的第一电阻，并且所述第一相位等于所述第一电压和所述第一电流之间的第一相位差 以及控制器，其适于基于所述第一量值来控制所述第一匹配网络的第一可变元件的第一值，并且基于所述第一阶段来控制由所述第一RF能量源提供的第一频率。

公开(公告)号：US20110031216A1

公开(公告)日：2011-02-10

申请号：US12851606

申请日：2010-08-06

Applicant: BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

Inventor： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

IPC: C23F1/00

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。

公开(公告)号：US08404598B2

公开(公告)日：2013-03-26

申请号：US12851606

申请日：2010-08-06

Applicant: Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

Inventor： Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

IPC: H01L21/302

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.