公开(公告)号：US07550130B2

公开(公告)日：2009-06-23

申请号：US11286342

申请日：2005-11-25

Applicant: Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

Inventor： Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

IPC: D01C5/00

CPC classification number: D01F9/127 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/34 ,  C01B2202/36 ,  Y10S977/743 ,  Y10S977/842 ,  Y10S977/843

Abstract: A method for producing vapor-grown carbon fibers (VGCF) having a three-dimensional linkage structure is disclosed. The method includes directly delivering heterogeneous catalysts dissolved in a liquid hydrocarbon raw material into a reaction chamber so as to continuously grow vapor-grown carbon fibers having a three-dimensional linkage structure without additional treatment. The method adopts a fluidized bed method, wherein a raw material solution consisting of a hydrocarbon compound, ferrocene (Fe(C5H5)2), thiophene and an organometalic (non-iron) compound is vaporized by preheat. Thereafter, the raw material gas and hydrogen gas are injected into a tubular reactor and pyrolized to produce vapor-grown carbon fibers with 3-D linkage structure.

Abstract translation: 公开了一种具有三维连杆结构的气相生长碳纤维（VGCF）的制造方法。 该方法包括将溶解在液态烃原料中的非均相催化剂直接输送到反应室中，以连续生长具有三维连接结构的气相生长碳纤维而无需另外处理。 该方法采用流化床法，其中由烃化合物，二茂铁（Fe（C5H5）2），噻吩和有机金属（非铁））化合物组成的原料溶液通过预热气化。 然后，将原料气体和氢气注入管式反应器中，进行热解，生成具有3-D连接结构的气相生长碳纤维。

公开(公告)号：US20050049812A1

公开(公告)日：2005-03-03

申请号：US10709425

申请日：2004-05-05

Applicant: Jie-Hong Wang ,  Kai-Jen Ko ,  An-Ru Cheng

Inventor： Jie-Hong Wang ,  Kai-Jen Ko ,  An-Ru Cheng

IPC: G01R31/28 ,  G06F19/00 ,  G01R31/00

CPC classification number: G01R31/2853

Abstract: A method for testing latch-up phenomenon of a chip is provided. The chip is tested on a test platform, the test platform storing a test program of the chip for testing the chip. The method includes (a) obtaining the test program of the chip tested on the test platform, (b) obtaining pin data of the chip by the test program of the chip, (c) setting up an input pin of the chip with an initial value, and (d) providing a test current to the pin of the chip, and then measuring the current between a power end and a ground end of the chip to see if it exceeds a first predetermined value.

Abstract translation: 提供了一种用于测试芯片闭锁现象的方法。 该芯片在测试平台上进行测试，测试平台存储芯片测试程序，用于测试芯片。 该方法包括：（a）获得在测试平台上测试的芯片的测试程序，（b）通过芯片的测试程序获取芯片的引脚数据，（c）以初始化的方式设置芯片的输入引脚 值，以及（d）向芯片的引脚提供测试电流，然后测量芯片的电源端和接地端之间的电流，以查看其是否超过第一预定值。

公开(公告)号：US20060147629A1

公开(公告)日：2006-07-06

申请号：US11286342

申请日：2005-11-25

Applicant: Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

Inventor： Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

IPC: C23C16/00

CPC classification number: D01F9/127 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/34 ,  C01B2202/36 ,  Y10S977/743 ,  Y10S977/842 ,  Y10S977/843

Abstract: A method for producing vapor-grown carbon fibers (VGCF) having a three-dimensional linkage structure is disclosed. The method includes directly delivering heterogeneous catalysts dissolved in a liquid hydrocarbon raw material into a reaction chamber so as to continuously grow vapor-grown carbon fibers having a three-dimensional linkage structure without additional treatment. The method adopts a fluidized bed method, wherein a raw material solution consisting of a hydrocarbon compound, ferrocene (Fe(C5H5)2), thiophene and an organometalic (non-iron) compound is vaporized by preheat. Thereafter, the raw material gas and hydrogen gas are injected into a tubular reactor and pyrolized to produce vapor-grown carbon fibers with 3-D linkage structure.

Abstract translation: 公开了一种具有三维连杆结构的气相生长碳纤维（VGCF）的制造方法。 该方法包括将溶解在液态烃原料中的非均相催化剂直接输送到反应室中，以连续生长具有三维连接结构的气相生长碳纤维而无需另外处理。 该方法采用流化床法，其中由烃化合物，二茂铁（Fe（C 5 H 5）2）2组成的原料溶液 ），噻吩和有机金属（非铁）化合物通过预热气化。 然后，将原料气体和氢气注入管式反应器中，进行热解，生成具有3-D连接结构的气相生长碳纤维。

公开(公告)号：US07374731B2

公开(公告)日：2008-05-20

申请号：US11217371

申请日：2005-09-02

Applicant: Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

Inventor： Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

IPC: B01J19/00 ,  D01F9/12 ,  D01F9/133 ,  C23C16/00 ,  B01D47/00

CPC classification number: D01F9/133 ,  B82Y30/00 ,  D01F9/127 ,  Y10S977/842 ,  Y10S977/844 ,  Y10S977/846 ,  Y10S977/891

Abstract: A reaction apparatus for producing vapor-grown carbon fibers (VGCF) and a continuous production system for producing VGCF are disclosed. The VGCF reaction apparatus is featured in installing a plurality of holes on the upper portion of inner tubes; and filling thermally conductive material in the areas between the inner tubes and the outer tube. The continuous production system includes the reaction apparatus, a product collection system and a carrier-gas collecting system, wherein carbon fibers produced by the reaction apparatus fall into the product collection system, and in the product collection system, a collection bin full-loaded with carbon fibers is pushed out and an empty bin is pushed into the collection chamber under PLC control as well as atmosphere replacement with inert gas, thereby continuously producing VGCF.

Abstract translation: 公开了一种用于生产气相生长碳纤维（VGCF）的反应设备和用于生产VGCF的连续生产系统。 VGCF反应装置的特征在于在内管的上部安装多个孔; 以及在内管和外管之间的区域中填充导热材料。 连续生产系统包括反应装置，产品收集系统和载气收集系统，其中由反应装置生产的碳纤维落入产品收集系统中，并且在产品收集系统中，收集箱装满 碳纤维被推出，空箱在PLC控制下被推入收集室，并用惰性气体进行大气替换，从而连续生产VGCF。

公开(公告)号：US20070152373A1

公开(公告)日：2007-07-05

申请号：US11322556

申请日：2006-01-03

Applicant: Chun-Shan Wang ,  Ya-Jen Huang ,  Chin-Tien Kuo ,  Kai-Jen Ko ,  Shih-Peng Yang ,  Yen-Chu Tan

Inventor： Chun-Shan Wang ,  Ya-Jen Huang ,  Chin-Tien Kuo ,  Kai-Jen Ko ,  Shih-Peng Yang ,  Yen-Chu Tan

IPC: B29C45/00

CPC classification number: A63B53/04 ,  A63B2209/00 ,  A63B2209/023 ,  B29C45/0005 ,  B29L2031/5227

Abstract: This invention provides a method for fabricating golf club head parts of high strength. At first, vapor grown carbon fibers (VGCF) with 3-D linkage structure is directly grown through a fluidized bed process. Then the VGCF in weight of less than 50 wt % is compounded with 50 wt %˜99 wt % thermoplastic resin or thermosetting resin so as to make a composite material. Thereafter, the composite material is injection-molded or compression-molded to form the golf club head parts with outstanding strength and modulus, light weight, low linear expansion coefficient and high vibration absorption.

Abstract translation: 本发明提供一种制造高强度高尔夫球杆头部件的方法。 首先，通过流化床工艺直接生长具有3-D连接结构的气相生长碳纤维（VGCF）。 然后将重量小于50重量％的VGCF与50重量％〜99重量％的热塑性树脂或热固性树脂混合，以制成复合材料。 此后，复合材料被注射成型或压缩成型，以形成高强度和模量，重量轻，线膨胀系数低，振动吸收率高的高尔夫球杆头部件。

公开(公告)号：US07089137B2

公开(公告)日：2006-08-08

申请号：US10709425

申请日：2004-05-05

Applicant: Jie-Hong Wang ,  Kai-Jen Ko ,  An-Ru Cheng

Inventor： Jie-Hong Wang ,  Kai-Jen Ko ,  An-Ru Cheng

IPC: G01R31/14

CPC classification number: G01R31/2853

Abstract: A method for testing latch-up phenomenon of a chip is provided. The chip is tested on a test platform, the test platform storing a test program of the chip for testing the chip. The method includes (a) obtaining the test program of the chip tested on the test platform, (b) obtaining pin data of the chip by the test program of the chip, (c) setting up an input pin of the chip with an initial value, and (d) providing a test current to the pin of the chip, and then measuring the current between a power end and a ground end of the chip to see if it exceeds a first predetermined value.

Abstract translation: 提供了一种用于测试芯片闭锁现象的方法。 该芯片在测试平台上进行测试，测试平台存储芯片测试程序，用于测试芯片。 该方法包括：（a）获得在测试平台上测试的芯片的测试程序，（b）通过芯片的测试程序获取芯片的引脚数据，（c）以初始化的方式设置芯片的输入引脚 值，以及（d）向芯片的引脚提供测试电流，然后测量芯片的电源端和接地端之间的电流，以查看其是否超过第一预定值。

公开(公告)号：US06440818B1

公开(公告)日：2002-08-27

申请号：US09828789

申请日：2001-04-10

Applicant: Yuan-Li Tsai ,  Kuo-Hua Ho ,  Kai-Jen Ko ,  Cheng-Hui Chung

Inventor： Yuan-Li Tsai ,  Kuo-Hua Ho ,  Kai-Jen Ko ,  Cheng-Hui Chung

IPC: H01L2176

CPC classification number: H01L21/76202 ,  H01L21/31111 ,  H01L21/31116

Abstract: A semiconductor wafer includes a silicon substrate, an active area positioned on the silicon substrate, and a field oxide layer positioned on the surface of the silicon substrate surrounding the active area. The present invention forms a doped area in the silicon substrate and within the active area and then deposits a dielectric layer on the surface of the semiconductor wafer. A dry etching process is performed to remove the dielectric layer. The top power of the dry etching process ranges between three hundred and five hundred watts to prevent damage to the silicon substrate near the field oxide layer and within the active area by the dry etching process, and to reduce the leakage current of the doped area. Additionally, the present invention also uses a wet etching process to remove the dielectric layer, which prevents an anisotropic physical impact on the silicon substrate near the field oxide layer to reduce the leakage current of the doped area.

Abstract translation: 半导体晶片包括硅衬底，位于硅衬底上的有源区域和位于围绕有源区域的硅衬底表面上的场氧化物层。 本发明在硅​​衬底中并在有源区内形成掺杂区，然后在半导体晶片的表面上沉积介电层。 进行干蚀刻处理以去除电介质层。 干蚀刻工艺的最大功率范围在三百五百瓦特之间，以防止通过干蚀刻工艺在场氧化物层附近和有源区域内的硅衬底损坏，并减少掺杂区域的漏电流。 此外，本发明还使用湿式蚀刻工艺来去除电介质层，这防止了在场氧化物层附近的硅衬底上的各向异性物理冲击以减少掺杂区域的漏电流。

公开(公告)号：US20070051313A1

公开(公告)日：2007-03-08

申请号：US11217371

申请日：2005-09-02

Applicant: Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

Inventor： Chun-Shan Wang ,  Ya-Jen Huang ,  Yen-Chu Tan ,  Kai-Jen Ko ,  Shih-Peng Yang

IPC: C23C16/00

CPC classification number: D01F9/133 ,  B82Y30/00 ,  D01F9/127 ,  Y10S977/842 ,  Y10S977/844 ,  Y10S977/846 ,  Y10S977/891

Abstract: A reaction apparatus for producing vapor-grown carbon fibers (VGCF) and a continuous production system for producing VGCF are disclosed. The VGCF reaction apparatus is featured in installing a plurality of holes on the upper portion of inner tubes; and filling thermally conductive material in the areas between the inner tubes and the outer tube. The continuous production system includes the reaction apparatus, a product collection system and a carrier-gas collecting system, wherein carbon fibers produced by the reaction apparatus fall into the product collection system, and in the product collection system, a collection bin full-loaded with carbon fibers is pushed out and an empty bin is pushed into the collection chamber under PLC control as well as atmosphere replacement with inert gas, thereby continuously producing VGCF.

Abstract translation: 公开了一种用于生产气相生长碳纤维（VGCF）的反应设备和用于生产VGCF的连续生产系统。 VGCF反应装置的特征在于在内管的上部安装多个孔; 以及在内管和外管之间的区域中填充导热材料。 连续生产系统包括反应装置，产品收集系统和载气收集系统，其中由反应装置生产的碳纤维落入产品收集系统中，并且在产品收集系统中，收集箱装满 碳纤维被推出，空箱在PLC控制下被推入收集室，并用惰性气体进行大气替换，从而连续生产VGCF。

公开(公告)号：US06638841B2

公开(公告)日：2003-10-28

申请号：US10117042

申请日：2002-04-08

Applicant: Kai-Jen Ko ,  Yuan-Li Tsai ,  Ming-Hui Wu ,  Steven Huang ,  Ching-Chun Hwang

Inventor： Kai-Jen Ko ,  Yuan-Li Tsai ,  Ming-Hui Wu ,  Steven Huang ,  Ching-Chun Hwang

IPC: H01L218238

CPC classification number: H01L21/823842

Abstract: A method for reducing a gate length bias is disclosed. The method utilizes an additional blanket ion implantation process to adjust the etching property of the undoped conductive layer. According to the present invention, a polysilicon layer is used to form NMOS and PMOS gate electrodes so that the gate length bias between the NMOS gate electrodes and the PMOS gate electrodes can be effectively reduced.

Abstract translation: 公开了一种减小栅极长度偏置的方法。 该方法利用额外的覆盖层离子注入工艺来调节未掺杂的导电层的蚀刻性能。 根据本发明，使用多晶硅层来形成NMOS和PMOS栅电极，从而可以有效地减小NMOS栅电极和PMOS栅电极之间的栅极长度偏置。