公开(公告)号：US08134419B2

公开(公告)日：2012-03-13

申请号：US12848532

申请日：2010-08-02

Applicant: Kazuo Nakano ,  Syuhei Amakawa ,  Noboru Ishihara ,  Kazuya Masu

Inventor： Kazuo Nakano ,  Syuhei Amakawa ,  Noboru Ishihara ,  Kazuya Masu

IPC: H03K3/03

CPC classification number: H03K3/0322 ,  G06F1/022

Abstract: A high-frequency generator circuit comprises a signal generating circuit, a delay unit, a selector, a synthesizer circuit, and a controller. The signal generating circuit generates a signal having the same frequency as an output signal. The delay unit includes a plurality of delay circuits, and delays the signal generated by the signal generating circuit. The selector selects an output signal of the delay circuits. The synthesizer circuit synthesizes the signal selected by the selector, and outputs the output signal. The controller controls the selector based on data for setting a waveform of the output signal and a control signal for setting at least amplitude, phase and frequency of the output signal.

Abstract translation: 高频发生器电路包括信号发生电路，延迟单元，选择器，合成器电路和控制器。 信号发生电路产生与输出信号相同频率的信号。 延迟单元包括多个延迟电路，并且延迟由信号发生电路产生的信号。 选择器选择延迟电路的输出信号。 合成器电路合成由选择器选择的信号，并输出输出信号。 控制器基于用于设置输出信号的波形的数据和用于设置至少输出信号的幅度，相位和频率的控制信号来控制选择器。

公开(公告)号：US20050056455A1

公开(公告)日：2005-03-17

申请号：US10927261

申请日：2004-08-26

Applicant: Kazuya Masu ,  Kenichi Okada ,  Hiroyuki Ito

Inventor： Kazuya Masu ,  Kenichi Okada ,  Hiroyuki Ito

IPC: H01P3/08 ,  H01B7/08

CPC classification number: H01P3/088

Abstract: A parallel wiring according to the present invention includes a plurality of differential lines juxtaposed in a reference direction, wherein each differential line includes two wiring lines which are substantially parallel to each other, and the two wiring lines oppose each other obliquely with respect to the reference direction.

Abstract translation: 根据本发明的平行布线包括沿参考方向并置的多条差分线，其中每条差分线包括彼此基本平行的两条布线，并且两条布线相对于基准倾斜相对 方向。

公开(公告)号：US06495461B2

公开(公告)日：2002-12-17

申请号：US09955039

申请日：2001-09-19

Applicant: Kazuo Tsubouchi ,  Kazuya Masu ,  Hideki Matsuhashi

Inventor： Kazuo Tsubouchi ,  Kazuya Masu ,  Hideki Matsuhashi

IPC: H01L2144

CPC classification number: H01L21/76856 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprising a substrate, a conductor and an insulating film provided on the surface of the substrate, part of the surface of the substrate being electrically connected with the conductor through a contact hole made in the insulating film, wherein a barrier layer present between part of the surface of the substrate and the conductor is provided only on the bottom of the contact hole, and the barrier layer provided on the bottom comprises amorphous titanium silicon nitride. This can provide a structure that has a barrier layer with a low contact resistance, enables formation of a conductor film of good quality on the barrier layer, and can attain a good electrical conduction even at fine contact holes.

Abstract translation: 一种半导体器件，包括设置在所述衬底的表面上的衬底，导体和绝缘膜，所述衬底的表面的一部分通过在所述绝缘膜中形成的接触孔与所述导体电连接，其中， 基板的表面的一部分和导体仅设置在接触孔的底部，并且设置在底部的阻挡层包括无定形氮化钛。这可以提供具有低接触电阻的阻挡层的结构 能够在阻挡层上形成质量好的导体膜，即使在微细的接触孔也能够获得良好的导电性。

公开(公告)号：US06201800B1

公开(公告)日：2001-03-13

申请号：US09024930

申请日：1998-02-17

Applicant: Kazuo Tsubouchi ,  Kazuya Masu ,  Yasuhito Fujita

Inventor： Kazuo Tsubouchi ,  Kazuya Masu ,  Yasuhito Fujita

IPC: H04B7216

CPC classification number: H04B1/7093

Abstract: A code division multiplex communications system comprising: receiving circuit for receiving a radio wave and transforming the radio wave to an electric signal; delaying circuit for sequentially reading the electric signal at a timing of a clock pulse; switching circuit for shutting off a drive current of the delaying circuit at an OFF timing of the clock pulse; adding and subtracting circuit for adding and subtracting outputs of the delaying circuit in accordance with a spread code; and reproducing circuit for reproducing a transmission signal on the basis of an output of the adding and subtracting circuit. RCS95-120 is similar with respect to a point that an analog LSI matched filter is constructed by a slide capacitor system.

Abstract translation: 一种码分复用通信系统，包括：接收电路，用于接收无线电波并将所述无线电波变换成电信号; 延迟电路，用于在时钟脉冲的定时顺序读取电信号; 切换电路，用于在时钟脉冲的OFF定时切断延迟电路的驱动电流; 加法和减法电路，用于根据扩展码对所述延迟电路的输出进行加法和减法; 以及再现电路，用于基于加法和减法电路的输出再现传输信号。 RCS95-120与通过滑动电容器系统构成的模拟LSI匹配滤波器相似。

公开(公告)号：US5393699A

公开(公告)日：1995-02-28

申请号：US969353

申请日：1992-10-30

Applicant: Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

Inventor： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

IPC: C23C16/20 ,  C23C14/34 ,  C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L21/44

CPC classification number: H01L21/32051 ,  H01L21/28562 ,  H01L2924/0002

Abstract: By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

Abstract translation: 通过提供一种沉积膜形成方法，其中使用氢化铝和氢的方法根据CVD方法选择性地沉积铝或主要由铝构成的金属的沉积膜形成方法，然后纯铝或主要由铝构成的金属是非金属的， 可以在精细的开口内或在绝缘层上形成质量好的导电膜。

公开(公告)号：US5180687A

公开(公告)日：1993-01-19

申请号：US587045

申请日：1990-09-24

Applicant: Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

Inventor： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

IPC: C23C16/20 ,  C23C14/34 ,  C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L21/32051 ,  H01L21/28562 ,  H01L2924/0002

Abstract: By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

公开(公告)号：US5091210A

公开(公告)日：1992-02-25

申请号：US584637

申请日：1990-09-19

Applicant: Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

Inventor： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

IPC: C23C16/20 ,  C23C16/452 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285

CPC classification number: C23C16/452 ,  C23C16/20

Abstract: A deposited film formation method which forms an aluminum film by use of the plasma CVD method,wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A).A deposited film formation method which forms an aluminum film by use of the plasma CVD method, comprising:(a) the step of arranging a substrate having an electron donative surface (a) and a non-electron donative surface (B) in a space for deposited film formation equipped with a reverse flow preventive means into plasma, and(b) the step of introducing a gas of trimethylaluminum and hydrogen gas into said space for deposited film formation, said aluminum film being selectively formed on said electron donative surface (A).

Abstract translation: 使用等离子体CVD法形成铝膜的沉积膜形成方法，其中具有给电子表面（A）和非电子给体表面（B）的基板被布置在用于沉积膜形成的空间中，具有 布置了朝向所述基板的横截面面积增加的部分，并且将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中以在所述给电子表面（A）上选择性地沉积铝膜。 一种通过使用等离子体CVD法形成铝膜的沉积膜形成方法，包括：（a）将具有给电子表面（a）和非电子给体表面（B）的衬底排列在空间中的步骤 （b）将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中的步骤，所述铝膜选择性地形成在所述给电子表面（A ）。

公开(公告)号：US5766682A

公开(公告)日：1998-06-16

申请号：US401993

申请日：1995-03-10

Applicant: Kazuo Tsubouchi ,  Kazuya Masu

Inventor： Kazuo Tsubouchi ,  Kazuya Masu

IPC: B01D1/14 ,  B01D1/16 ,  B01D1/20 ,  B01D3/06 ,  B01J7/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C30B25/14 ,  H01L21/285 ,  C23C16/00

CPC classification number: C23C16/4557 ,  B01D1/14 ,  B01D1/16 ,  B01D3/06 ,  C23C16/4486

Abstract: A chemical vapor deposition process is disclosed comprising the steps of forming liquid droplets of a liquid raw material; injecting the liquid droplets through a plate member opening placed opposite to the surface of the substrate to vaporize the liquid droplets; and supplying a reaction gas that reacts with the vaporized raw material; and depositing a thin film on the substrate.

Abstract translation: 公开了化学气相沉积方法，其包括形成液体原料的液滴的步骤; 通过与基板的表面相对设置的板构件开口喷射液滴，以使液滴蒸发; 并提供与蒸发的原料反应的反应气体; 以及在衬底上沉积薄膜。

公开(公告)号：US5364664A

公开(公告)日：1994-11-15

申请号：US996875

申请日：1992-12-22

Applicant: Kazuo Tsubouchi ,  Kazuya Masu

Inventor： Kazuo Tsubouchi ,  Kazuya Masu

IPC: C23C16/02 ,  C23C16/20 ,  C30B25/04 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06 ,  B05D3/00 ,  C23C16/00

CPC classification number: H01L21/02046 ,  C23C16/0227 ,  C23C16/20 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76879

Abstract: A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450.degree. C.

Abstract translation: 用于形成包含铝的沉积膜的方法包括以下步骤：化学地处理具有给电子表面和非给电子表面的衬底的表面，以便用氢原子终止给电子表面，然后 将基板放置在用于沉积膜形成的空间中; 将包含烷基氢化铝和氢气的气体引入用于沉积膜形成的空间中; 并且通过将基板保持在不低于烷基铝氢化物的分解温度至不高于450℃的温度范围内的温度下，在供电表面上选择性地形成铝膜。

公开(公告)号：US5245207A

公开(公告)日：1993-09-14

申请号：US568956

申请日：1990-08-17

Applicant: Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

Inventor： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

IPC: H01L27/088 ,  H01L29/49

CPC classification number: H01L29/49 ,  H01L27/0883 ,  H01L29/4916 ,  H01L29/4966 ,  H01L29/4975

Abstract: A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.

Abstract translation: 即使在室温或液氮温度下也可以通过使用耗尽型MOSFET来实现耗尽操作，而不会在与栅极电极下方的沟道部分掺杂具有与半导体衬底的导电类型相反的导电类型的杂质。 此外，该FET可以与增强型FET一起构造逆变器，并且它们可以集成在一个衬底上。