-
1.发明申请METHOD OF FORMING IMAGE OF SEMICONDUCTOR DEVICE, AND METHOD OF DETECTING A DEFECT OF THE SEMICONDUCTOR DEVICE BY USING THE IMAGE FORMING METHOD 审中-公开形成半导体器件的图像的方法以及通过使用图像形成方法检测半导体器件的缺陷的方法公开(公告)号：US20120082367A1
公开(公告)日：2012-04-05
申请号：US13237993
申请日：2011-09-21
申请人： Jung-hoon Byun , Yong-min Cho , Soo-bok Chin , Jae-kwan Park , Seok-woo Nam , Tae-yong Lee , Kee-Hong Lee , Young-min Kim
发明人： Jung-hoon Byun , Yong-min Cho , Soo-bok Chin , Jae-kwan Park , Seok-woo Nam , Tae-yong Lee , Kee-Hong Lee , Young-min Kim
CPC分类号： G06T7/0002 , G06T2207/10016 , G06T2207/10061 , G06T2207/30148 , G06T2207/30168
摘要： A method forms an ultimate or final image of a sample by selecting some of a plurality of image frames and integrating the selected frames. The method includes providing a semiconductor device including a region of interest and a peripheral region; obtaining a plurality of image frames each including a region of interest image and a peripheral region image respectively corresponding to the region of interest and the peripheral region; selecting at least some of the plurality of image frames based on a contrast between the region of interest image and the peripheral region image; and obtaining an image of the semiconductor device by integrating the selected image frames.
摘要翻译： 方法通过选择多个图像帧中的一些并且对所选择的帧进行积分来形成样本的最终或最终图像。 该方法包括提供包括感兴趣区域和周边区域的半导体器件; 获得各自包括分别对应于感兴趣区域和周边区域的感兴趣区域图像和周边区域图像的多个图像帧; 基于感兴趣区域与外围区域图像之间的对比度来选择多个图像帧中的至少一些; 以及通过对所选择的图像帧进行积分来获得半导体器件的图像。
-
2.发明申请METHODS OF FORMING SEMICONDUCTOR DEVICE INCLUDING CAPACITORS WITH MODIFIED SIDEWALLS AND RELATED DEVICES 有权形成包含修改后的电容器和相关器件的电容器的半导体器件的方法公开(公告)号：US20150214289A1
公开(公告)日：2015-07-30
申请号：US14509828
申请日：2014-10-08
申请人： Chan-Won Kim , Jung-Woo Seo , Kee-Hong Lee , Kyoung-Ryul Yoon , Seong-Kyu Yun
发明人： Chan-Won Kim , Jung-Woo Seo , Kee-Hong Lee , Kyoung-Ryul Yoon , Seong-Kyu Yun
IPC分类号： H01L49/02 , H01L21/311
CPC分类号： H01L21/311 , H01L21/31116 , H01L27/10814 , H01L27/10823 , H01L27/10852 , H01L28/90
摘要： Methods of forming a semiconductor device can be provided by forming a first molding layer on a substrate and forming a first hole through the first molding layer. A second molding layer can be formed on the first molding layer so that the first hole is retained in the first molding layer and a second hole can be formed through the second molding layer to connect with the first hole. A capacitor electrode can be formed in the first and second holes.
摘要翻译： 形成半导体器件的方法可以通过在基片上形成第一成型层并通过第一成型层形成第一孔来提供。 可以在第一成型层上形成第二成型层，使得第一孔保持在第一成型层中，并且可以通过第二成型层形成第二孔以与第一孔连接。 可以在第一和第二孔中形成电容器电极。
-
搜索结果
2 条记录 (耗时 0.012 秒)
