Abstract:
A narrow band x-ray filter can include: a substrate; and a sheaf of one or more reflection units stacked upon each other on the substrate. Each reflection unit can include: a first set of at least two discrete spacers on a respective underlying structures, a reflector disposed on the first set of spacers so as to form a void between the respective underlying structure and the reflector; and a first set of at least two discrete shims disposed on the first set of at least two spacers, each shim being at least substantially the same thickness as the reflector. A first device to produce a narrow band x-ray beam may include such a filter or an x-ray telescope. A second device to make an x-ray image of a subject may include the first device.
Abstract:
A method of detecting a defect of a semiconductor device includes forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively, obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region, and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.
Abstract:
A stackable rack may comprise: at least two rails, a cross-section of each rail having a shape resembling a staircase, first step portion of which represents a first surface upon which a reflector can be disposed; and a second step portion of which represents a second surface which can support another rail. A method of making a narrow band x-ray filter may comprise: providing a substrate; and stacking one or more reflection units in succession upon the substrate, each reflection unit including a rack (such as mentioned above) and a reflector held by the rack. An apparatus to produce a substantially narrow band x-ray beam may include such a filter. An apparatus to make an x-ray image of a subject may include: the apparatus to produce a substantially narrow band x-ray beam, e.g., as set forth above, and an x-ray detector arranged to receive the narrow band x-ray.
Abstract:
A method and apparatus for detecting a defect in a pattern are provided. The method includes: obtaining a pattern image from a pattern in a region of interest on a semiconductor substrate and obtaining a reference image are obtained; matching the obtained pattern image and the obtained reference image to select a pixel group including pixels indicating defect information of the pattern image; adjusting a defect detection threshold of the selected pixel group; comparing the obtained pattern image and the obtained reference image to detect a pattern defect in a detection region corresponding to the selected pixel group of the pattern image, according to the adjusted defect detection threshold.
Abstract:
An x-ray reflector may include: a substrate; a first layer formed on the substrate, the first layer including a relatively higher-Z material, where Z represents the atomic number; and a second layer formed on the first layer, the second layer including a relatively lower-Z material; at least one of the first layer and the second layer exhibiting a taper in an axial direction extending between a first end of the substrate and a second end of the substrate.
Abstract:
A portable flood-barrier-system can include a portable block of substantial mass; and a deflatable bladder, a first portion of which is disposed on a substrate; the block being disposed at least partly on the first portion of the bladder so as to releasably compress the first portion between the block and the substrate and so releasably hold the first portion therebetween due to friction.
Abstract:
A method of detecting a defect of a semiconductor device includes forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively, obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region, and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.
Abstract:
A method forms an ultimate or final image of a sample by selecting some of a plurality of image frames and integrating the selected frames. The method includes providing a semiconductor device including a region of interest and a peripheral region; obtaining a plurality of image frames each including a region of interest image and a peripheral region image respectively corresponding to the region of interest and the peripheral region; selecting at least some of the plurality of image frames based on a contrast between the region of interest image and the peripheral region image; and obtaining an image of the semiconductor device by integrating the selected image frames.