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    PLASMA GENERATOR AND CLEANING/PURIFICATION APPARATUS USING SAME
    1.
    发明申请
    PLASMA GENERATOR AND CLEANING/PURIFICATION APPARATUS USING SAME 审中-公开
    使用相同的等离子体发生器和清洁/净化装置

    公开(公告)号：US20130333841A1

    公开(公告)日：2013-12-19

    申请号：US14001780

    申请日：2012-02-17

    申请人： Kenji Narita ,  Wataru Sanematsu ,  Akihiko Saitoh ,  Satoshi Nakayama

    发明人： Kenji Narita ,  Wataru Sanematsu ,  Akihiko Saitoh ,  Satoshi Nakayama

    IPC分类号： B08B13/00

    CPC分类号： B08B13/00 ,  A45D27/46 ,  C01B13/11 ,  C01B2201/64 ,  H05H1/2406 ,  H05H2001/2412

    摘要： A plasma generator (1) comprises: a liquid containing part (3) which contains a liquid (6) including water; a gas containing part (4) which contains a gas; and a partition wall part (5) that separates the liquid containing part and the gas containing part from each other and is provided with a gas passage (5a) through which the gas in the gas containing part is led to the liquid containing part. The plasma generator (1) is also provided with a first electrode (10) that is arranged in the gas containing part and a second electrode (11) that is arranged so as to be in contact with the liquid in the liquid containing part. The plasma generator (1) is further provided with: a gas supply unit (9) which supplies the gas to the gas containing part; a plasma power supply unit (13); and a liquid inflow prevention device (a control unit (14)) which prevents the liquid from flowing into the gas containing part from the liquid containing part through the gas passage.

    摘要翻译： 等离子体发生器（1）包括：含有包含水的液体（6）的液体容纳部分（3） 包含气体的气体容纳部分（4）; 以及将液体容纳部和气体容纳部彼此分离并且设置有气体通道（5a）的分隔壁部（5），气体容纳部中的气体通过该气体通道被引导到液体容纳部。 等离子体发生器（1）还设置有布置在气体容纳部分中的第一电极（10）和布置成与液体容纳部分中的液体接触的第二电极（11）。 等离子体发生器（1）还设置有：气体供应单元（9），其将气体供应到气体容纳部分; 等离子体供电单元（13）; 以及防止液体通过气体通道从液体容纳部分流入气体容纳部分的液体流入防止装置（控制单元（14））。

    Semiconductor device for charge-up damage evaluation and charge-up damage evaluation method
    3.
    发明授权
    Semiconductor device for charge-up damage evaluation and charge-up damage evaluation method 失效
    用于充电损伤评估和充电损伤评估方法的半导体装置

    公开(公告)号：US06943427B2

    公开(公告)日：2005-09-13

    申请号：US10769770

    申请日：2004-02-03

    申请人： Kenji Narita ,  Takao Yamaguchi

    发明人： Kenji Narita ,  Takao Yamaguchi

    IPC分类号： H01L21/66 ,  G01R31/26 ,  H01L21/302 ,  H01L21/461 ,  H01L23/544 ,  H01L29/00

    CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device for charge-up damage evaluation and an evaluation method for the same are provided which permit to detect charge-up damage caused by static electricity. There are provided a silicon substrate 9, a first insulation film 10 formed on the silicon substrate 9, a first conductive layer 6 formed on the first insulation film 10 and connected to the silicon substrate 9, a second insulation film 11 formed on the first conductive layer 6, a second conductive layer 8 formed on the second insulation film 11 and serving as an antenna, and a third insulation film 12 formed on the second conductive layer 8.

    摘要翻译： 提供用于充电损伤评估的半导体器件及其评估方法，其可以检测由静电引起的充电损坏。 提供硅基板9，形成在硅基板9上的第一绝缘膜10，形成在第一绝缘膜10上并连接到硅基板9的第一导电层6，形成在第一导电层上的第二绝缘膜11 层6，形成在第二绝缘膜11上并用作天线的第二导电层8和形成在第二导电层8上的第三绝缘膜12。

    Electrical connector
    4.
    发明授权
    Electrical connector 有权
    电连接器

    公开(公告)号：US06345987B1

    公开(公告)日：2002-02-12

    申请号：US09602801

    申请日：2000-06-23

    申请人： Teruyuki Mori ,  Hirohisa Takano ,  Kenji Narita

    发明人： Teruyuki Mori ,  Hirohisa Takano ,  Kenji Narita

    IPC分类号： H01R1200

    CPC分类号： H01R13/2435 ,  H01R12/52 ,  H01R12/714

    摘要： A connector includes a connector body made of an electrically insulating material, having a contact support wall whose one end defines a contact mount portion, and a contact made of an electrically conductive material, having a pair of resilient contact elements located on upper and lower sides of the contact support wall, and a resilient support portion which connects the resilient contact elements and which is elastically supported by the contact mount portion. The resilient support portion of the contact is engaged with the contact support wall so that the entire contact can swing about the contact mount portion.

    摘要翻译： 连接器包括由电绝缘材料制成的连接器主体，其具有一端限定触点安装部分的触点支撑壁和由导电材料制成的触点，其具有位于上侧和下侧的一对弹性触点元件 以及连接弹性接触元件并由接触安装部分弹性支撑的弹性支撑部分。 接触件的弹性支撑部分与接触支撑壁接合，使得整个接触件能够围绕接触安装部分摆动。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20100144146A1

    公开(公告)日：2010-06-10

    申请号：US12627572

    申请日：2009-11-30

    申请人： Koji UTAKA ,  Yoshiharu HIDAKA ,  Kenji NARITA

    发明人： Koji UTAKA ,  Yoshiharu HIDAKA ,  Kenji NARITA

    IPC分类号： H01L21/30

    CPC分类号： H01L21/32134 ,  H01L21/02068 ,  H01L21/0209 ,  H01L21/28052 ,  H01L21/28518 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L29/40111 ,  H01L29/665 ,  H01L29/6684

    摘要： The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c).

    摘要翻译： 执行在包含硅的半导体衬底或含有硅的导电膜上形成含有贵金属的贵金属膜或金属膜的步骤a），在半导体衬底上形成含有贵金属的硅化物膜的步骤b） 或者在步骤a）之后执行导电膜，通过对半导体衬底进行热处理，在步骤b）之后执行使用第一化学溶液活化未反应部分贵金属的步骤c），并且步骤 d）溶解步骤c）中活化的贵金属的未反应部分。 步骤d）在步骤c）之后的30分钟以内进行。

    CONNECTING STRUCTURE FOR STEEL FRAME COLUMNS AND STEEL FRAME GIRDERS
    8.
    发明申请
    CONNECTING STRUCTURE FOR STEEL FRAME COLUMNS AND STEEL FRAME GIRDERS 有权
    钢框架和钢框架连接结构

    公开(公告)号：US20090223166A1

    公开(公告)日：2009-09-10

    申请号：US12246438

    申请日：2008-10-06

    申请人： Eiichi Ohata ,  Kazuo Wakasugi ,  Koichi Hirosawa ,  Kenji Narita

    发明人： Eiichi Ohata ,  Kazuo Wakasugi ,  Koichi Hirosawa ,  Kenji Narita

    IPC分类号： E04B1/38

    CPC分类号： E04B1/2403 ,  E04B2001/2415 ,  E04B2001/2445 ,  E04B2001/2448

    摘要： Sufficient yield strength is achieved against tensile, compressive and shearing forces working on steel frame columns and steel frame girders by using simply configured connective fittings to reduce costs and construction periods. For this purpose, a connective structure of highly rigid steel frame columns and steel frame girders formed by connecting steel frame columns and steel frame girders each having a web part and flange parts with connective fittings is provided. Each of the connective fittings has a bottom plate part and, on a surface of the bottom plate part, side plate parts which rise at a substantially right angle to the bottom plate part and have inserting areas extending farther than a tip of the bottom plate part in the state of rising at the substantially right angle. On the other hand, slit holes are formed in the flange parts of the steel frame columns in the area where the flange parts cross the flange parts of the steel frame girders, the inserting areas of the side plate parts are inserted into the slit holes, the inserting areas of the side plate parts are fixed in a state of opposing the web parts of the steel frame columns, and the bottom plate parts of the connective fittings are fixed in a state of opposing the flange parts of the steel frame girders.

    摘要翻译： 通过使用简单配置的连接配件降低成本和施工周期，可以获得对钢框架柱和钢框架梁的拉伸，压缩和剪切力的足够的屈服强度。 为此，提供了一种高刚性钢框架柱和钢框架梁的连接结构，其通过连接钢框架柱和钢框架梁而形成，每个框架梁均具有腹板部分和带连接件的凸缘部分。 每个连接配件具有底板部分，并且在底板部分的表面上，侧板部分与底板部分基本成直角地上升，并且具有比底板部分的尖端更远的插入区域 处于基本上直角上升的状态。 另一方面，在凸缘部与钢框架梁的凸缘部交叉的区域的钢框架的凸缘部形成有狭缝孔，侧板部的插入区域插入到狭缝孔中， 侧板部分的插入区域被固定在与钢框架柱的腹板部分相对的状态下，并且连接配件的底板部分被固定在与钢框架梁的凸缘部分相对的状态下。

    Developing device and an image forming apparatus including the same
    9.
    发明授权
    Developing device and an image forming apparatus including the same 有权
    显影装置和包括该显影装置的图像形成装置

    公开(公告)号：US07027761B2

    公开(公告)日：2006-04-11

    申请号：US10793281

    申请日：2004-03-05

    申请人： Kyohta Koetsuka ,  Tsuyoshi Imamura ,  Sumio Kamoi ,  Noriyuki Kamiya ,  Kenji Narita ,  Kenzo Tatsumi ,  Mieko Kakegawa

    发明人： Kyohta Koetsuka ,  Tsuyoshi Imamura ,  Sumio Kamoi ,  Noriyuki Kamiya ,  Kenji Narita ,  Kenzo Tatsumi ,  Mieko Kakegawa

    IPC分类号： G03G15/09

    CPC分类号： G03G15/0921

    摘要： A developer carrier for an SLIC developing system includes a developing sleeve and a magnetic roll having a plurality of magnetic poles. A narrow development nip is formed by narrowing the width of a development pole forming a magnet brush and by narrowing a developer rising region in a developing region where a flux density attenuation ratio of the development pole is 40% or more. A half-value width of the flux density of the development pole is 22° or less and the flux density variation rate is 4.0 mT/Deg or more in a circumferential direction in a part where the flux density in at least half of that of a downstream side of a developer carrying direction from a peak magnetic force position of the development pole is 90% or less.

    摘要翻译： 用于SLIC显影系统的显影剂载体包括具有多个磁极的显影套筒和磁辊。 通过缩小形成磁刷的显影极的宽度，并且通过使显影极的磁通密度衰减比为40％以上的显影区域中的显影剂上升区域变窄来形成窄的显影压区。 显影极的磁通密度的半值宽度为22度以下，磁通密度变化率在周向上为4.0mT /度以上，其中通量密度至少为a 从显影极的峰值磁力位置传送方向的显影剂的下游侧为90％以下。