公开(公告)号：US07187796B1

公开(公告)日：2007-03-06

申请号：US10676613

申请日：2003-10-01

申请人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bhanwar Singh

发明人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bhanwar Singh

IPC分类号： G06K9/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/78 ,  H01J37/3174

摘要： The present invention relates to monitoring and controlling a reticle fabrication process (e.g. employed with an electron beam lithography process). A typical fabrication process involves discrete stages including exposure, post-exposure bake and development. After fabrication is complete, an inspection can be performed on the reticle to determine whether any parameters during fabrication and/or any data points are outside of acceptable tolerances. The data is collected and fed into an algorithm (e.g. data-mining algorithm) utilized to determine which fabrication parameters need to be modified then sends the data to a control system (e.g. advanced process control) to facilitate needed changes to the fabrication parameters.

摘要翻译： 本发明涉及监测和控制掩模版制造工艺（例如采用电子束光刻工艺）。 典型的制造过程涉及离散阶段，包括曝光，曝光后烘烤和显影。 制造完成后，可以对掩模版进行检查，以确定制造期间和/或任何数据点中的任何参数是否超出可接受的公差。 收集数据并将其馈送到用于确定哪些制造参数需要被修改的算法（例如数据挖掘算法）中，然后将数据发送到控制系统（例如高级过程控制），以便于对制造参数的所需改变。

公开(公告)号：US07159205B1

公开(公告)日：2007-01-02

申请号：US10838830

申请日：2004-05-04

申请人： Gilles Amblard ,  Bhanwar Singh ,  Khoi A. Phan

发明人： Gilles Amblard ,  Bhanwar Singh ,  Khoi A. Phan

IPC分类号： G06F17/50

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/40

摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of the invention provides for forming features having CDs that are larger than ultimately desired in a mask resist. Upon application of a non-lithographic shrink technique, LER is mitigated and CD is reduced to within a desired target tolerance.

摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及在压印掩模中在图案线形成期间促进改进的临界尺寸（CD）控制和减少线边缘粗糙度（LER）的系统和方法。 本发明的一个方面提供了形成具有大于掩模抗蚀剂中最终期望的CD的特征。 在施加非光刻收缩技术时，LER被减轻并且CD被减小到期望的目标公差内。

公开(公告)号：US07148142B1

公开(公告)日：2006-12-12

申请号：US10874500

申请日：2004-06-23

申请人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Khoi A. Phan

发明人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Khoi A. Phan

IPC分类号： H01L21/44

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76807 ,  H01L21/76817 ,  H01L2221/1021

摘要： A system and method are provided to facilitate dual damascene interconnect integration in a single imprint step. The method provides for creation of a translucent imprint mold with three-dimensional features comprising the dual damascene pattern to be imprinted. The imprint mold is brought into contact with a photopolymerizable organosilicon imaging layer deposited upon a transfer layer which is spin coated or otherwise deposited upon a dielectric layer of a substrate. When the photopolymerizable layer is exposed to a source of illumination, it cures with a structure matching the dual damascene pattern of the imprint mold. A halogen breakthrough etch followed by oxygen transfer etch transfer the vias from the imaging layer into the transfer layer. A second halogen breakthrough etch followed by a second oxygen transfer etch transfer the trenches from the imaging layer into the transfer layer. A dielectric etch transfers the pattern from the transfer layer into the dielectric layer. A metal fill process then fills the dual damascene openings of the dielectric layer with metal.

摘要翻译： 提供了一种系统和方法，以便在单个压印步骤中促进双镶嵌互连集成。 该方法提供了具有三维特征的半透明压印模具的创建，该三维特征包括要印刷的双镶嵌图案。 压印模具与沉积在转移层上的可光聚合的有机硅成像层接触，转移层被旋涂或以其它方式沉积在基底的电介质层上。 当可光聚合层暴露于照明源时，它可以用匹配印模的双镶嵌图案的结构固化。 卤素穿透蚀刻随后氧传递蚀刻将通孔从成像层转移到转移层中。 第二个卤素穿透蚀刻，随后是第二次氧转移蚀刻，将沟槽从成像层转移到转移层中。 电介质蚀刻将图案从转印层转移到电介质层中。 然后，金属填充过程用金属填充介电层的双镶嵌开口。

公开(公告)号：US07034930B1

公开(公告)日：2006-04-25

申请号：US09634302

申请日：2000-08-08

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan

IPC分类号： G01N21/88

CPC分类号： G01N21/9501 ,  G01N21/956

摘要： A measuring system and method are provided for defect identification and location. The system an optical measurement device adapted to view a workpiece along an optical path, and an optical indicia device located in the optical path between the workpiece and the measurement device, which is adapted to provide location information to the system or a user. The location information can be used to correlate defect locations identified in a wafer before and after a process step, as well as between two different wafers. The optical indicia device may further allow the use of field comparison techniques in identifying and locating defects in a blank or unpatterned workpiece. The indicia device may comprise, for example, a transparent member having a grid or other optical indicia patterned thereon, allowing inspection of the workpiece with reference to the optical indicia pattern.

摘要翻译： 提供了一种用于缺陷识别和定位的测量系统和方法。 该系统适于沿着光路观察工件，以及位于工件和测量装置之间的光路中的光学标记装置，其适于向系统或用户提供位置信息。 位置信息可用于将在晶片中识别的缺陷位置与处理步骤之间以及两个不同的晶片之间相关联。 光学标记装置还可以允许使用现场比较技术来识别和定位空白或未图案化的工件中的缺陷。 标记装置可以包括例如具有图案化的网格或其他光学标记的透明构件，允许参考光标记图案检查工件。

公开(公告)号：US06999254B1

公开(公告)日：2006-02-14

申请号：US10967845

申请日：2004-10-18

申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G02B7/00

CPC分类号： G03F7/70341

摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

摘要翻译： 公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。 已知的光栅结构被构建在衬底上。 折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

公开(公告)号：US06809793B1

公开(公告)日：2004-10-26

申请号：US10050456

申请日：2002-01-16

申请人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

发明人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

IPC分类号： G03B2752

CPC分类号： G03F7/70558 ,  G03F7/70875

摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.

摘要翻译： 公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。 一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。 所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

公开(公告)号：US06507474B1

公开(公告)日：2003-01-14

申请号：US09597126

申请日：2000-06-19

申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

IPC分类号： H01T2300

CPC分类号： G03F7/70616 ,  G03F7/70941

摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.

摘要翻译： 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。

公开(公告)号：US06486072B1

公开(公告)日：2002-11-26

申请号：US09709974

申请日：2000-11-10

申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

IPC分类号： H01L21302

CPC分类号： H01L21/02046

摘要： A system and method are disclosed for facilitating removal of a defect from a substrate. A charge is applied at the surface of substrate, such as in the form of an ionized gas, to weaken attractive forces between the defect and the substrate. As a result of weakening the attractive forces, a suitable defect removal system may be employed to remove the defect.

摘要翻译： 公开了一种用于便于从基底去除缺陷的系统和方法。 在基板的表面，例如以电离气体的形式施加电荷，以减弱缺陷和基板之间的吸引力。 作为吸引力减弱的结果，可以采用合适的缺陷去除系统来去除缺陷。

公开(公告)号：US06444373B1

公开(公告)日：2002-09-03

申请号：US09596954

申请日：2000-06-16

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Bharath Rangarajan

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Bharath Rangarajan

IPC分类号： G03F900

CPC分类号： G03F1/70 ,  G03F7/70433 ,  G03F7/70441

摘要： The present invention relates to a system and method of modifying mask layout data to improve the fidelity of mask manufacture. The system and method include determining the difference between the mask layout design and the mask features as written, and generating sizing corrections. The sizing corrections can be used to modify the mask layout data, and/or stored in a database.

摘要翻译： 本发明涉及一种修改掩模布局数据以提高掩模制造的保真度的系统和方法。 该系统和方法包括确定掩模布局设计和掩模特征之间的写入差异，并产生尺寸校正。 尺寸校正可用于修改掩模布局数据和/或存储在数据库中。

公开(公告)号：US06423479B1

公开(公告)日：2002-07-23

申请号：US09495165

申请日：2000-01-31

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Bryan K. Choo

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Sanjay K. Yedur ,  Bryan K. Choo

IPC分类号： G03F726

CPC分类号： G03F1/82

摘要： In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.

摘要翻译： 在一个实施例中，本发明涉及一种处理光刻掩模的方法，包括以下步骤：将具有光化辐射的光刻基底通过室中的光刻掩模曝光; 从所述腔室去除所述光刻掩模，其中所述光刻掩模含有碳污染物; 并使光刻掩模与三氧化硫接触，从而减少其上的碳污染物。