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    Refractive index system monitor and control for immersion lithography
    1.
    发明授权
    Refractive index system monitor and control for immersion lithography 有权
    折射率系统监测和控制浸没光刻

    公开(公告)号：US06999254B1

    公开(公告)日：2006-02-14

    申请号：US10967845

    申请日：2004-10-18

    申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

    发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

    IPC分类号： G02B7/00

    CPC分类号： G03F7/70341

    摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

    摘要翻译： 公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。 已知的光栅结构被构建在衬底上。 折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

    System and method to monitor reticle heating
    2.
    发明授权
    System and method to monitor reticle heating 有权
    监控标线加热的系统和方法

    公开(公告)号：US06809793B1

    公开(公告)日：2004-10-26

    申请号：US10050456

    申请日：2002-01-16

    申请人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

    发明人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

    IPC分类号： G03B2752

    CPC分类号： G03F7/70558 ,  G03F7/70875

    摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.

    摘要翻译： 公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。 一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。 所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

    Using localized ionizer to reduce electrostatic charge from wafer and mask
    3.
    发明授权
    Using localized ionizer to reduce electrostatic charge from wafer and mask 有权
    使用局部电离器来减少晶片和掩模的静电电荷

    公开(公告)号：US06507474B1

    公开(公告)日：2003-01-14

    申请号：US09597126

    申请日：2000-06-19

    申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

    发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

    IPC分类号： H01T2300

    CPC分类号： G03F7/70616 ,  G03F7/70941

    摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.

    摘要翻译： 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。

    System and method to facilitate removal of defects from a substrate
    4.
    发明授权
    System and method to facilitate removal of defects from a substrate 失效
    有助于从基底去除缺陷的系统和方法

    公开(公告)号：US06486072B1

    公开(公告)日：2002-11-26

    申请号：US09709974

    申请日：2000-11-10

    申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    IPC分类号： H01L21302

    CPC分类号： H01L21/02046

    摘要： A system and method are disclosed for facilitating removal of a defect from a substrate. A charge is applied at the surface of substrate, such as in the form of an ionized gas, to weaken attractive forces between the defect and the substrate. As a result of weakening the attractive forces, a suitable defect removal system may be employed to remove the defect.

    摘要翻译： 公开了一种用于便于从基底去除缺陷的系统和方法。 在基板的表面，例如以电离气体的形式施加电荷，以减弱缺陷和基板之间的吸引力。 作为吸引力减弱的结果，可以采用合适的缺陷去除系统来去除缺陷。

    System and method of pattern recognition and metrology structure for an X-initiative layout design
    9.
    发明授权
    System and method of pattern recognition and metrology structure for an X-initiative layout design 失效
    用于X主动布局设计的模式识别和计量结构的系统和方法

    公开(公告)号：US07001830B2

    公开(公告)日：2006-02-21

    申请号：US10653309

    申请日：2003-09-02

    申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F9/7076 ,  Y10S438/975

    摘要： The present invention relates to inspection methods and systems utilized to provide a best means for inspection of a wafer. The methods and systems include wafer-to-reticle alignment, layer-to-layer alignment and wafer surface feature inspection. The wafer-to-reticle alignment is improved by the addition of diagonal lines to existing alignment marks to decrease the intersection size and corresponding area that a desired point can reside. Layer-to-layer alignment is improved in a similar manner by the addition of oblique and/or non-linear line segments to existing overlay targets. Also, providing for wafer surface inspection in a multitude of desired diagonal axes allows for more accurate feature measurement.

    摘要翻译： 本发明涉及用于提供用于检查晶片的最佳方法的检查方法和系统。 该方法和系统包括晶片到标线片对准，层间对准和晶片表面特征检查。 通过将对角线添加到现有的对准标记来减小交叉点大小和期望点可以驻留的对应区域来改善晶片到标线阵列对准。 通过向现有覆盖目标添加倾斜和/或非线性线段，以类似的方式改善了层间对齐。 此外，在多个所需的对角轴中提供晶片表面检查允许更精确的特征测量。

    Method and system to monitor and control electro-static discharge
    10.
    发明授权
    Method and system to monitor and control electro-static discharge 失效
    监测和控制静电放电的方法和系统

    公开(公告)号：US06741445B1

    公开(公告)日：2004-05-25

    申请号：US10050458

    申请日：2002-01-16

    申请人： Khoi A. Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

    发明人： Khoi A. Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

    IPC分类号： H01T2300

    CPC分类号： H01L21/67253

    摘要： A system and methodology is provided for monitoring and controlling static charge during wafer and mask fabrication. The static charge on a target device is monitored. If the static charge becomes too high, corrective actions are taken to reduce the static charge. An antistatic solution is dispensed on the target device. The system and methodology provided reduce damage resulting from electrostatic discharge during fabrication. The system and methodology also reduce delays during fabrication by automatically controlling static charge without the need for manual intervention.

    摘要翻译： 提供了一种用于在晶片和掩模制造期间监测和控制静电荷的系统和方法。 监视目标设备上的静电荷。 如果静电荷过高，则采取纠正措施减少静电。 抗静电溶液分配在目标装置上。 所提供的系统和方法减少了制造过程中静电放电造成的损坏。 该系统和方法还通过自动控制静电而减少制造过程中的延迟，而无需人工干预。