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    Method for charging substrate to a potential
    1.
    发明申请
    Method for charging substrate to a potential 有权
    将基板充电到电位的方法

    公开(公告)号：US20070158589A1

    公开(公告)日：2007-07-12

    申请号：US11644591

    申请日：2006-12-21

    申请人： Kirk Bertsche ,  Mark McCord

    发明人： Kirk Bertsche ,  Mark McCord

    IPC分类号： A61N5/00

    CPC分类号： G21K7/00 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048

    摘要： A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.

    摘要翻译： 将绝缘基板的表面充电至目标电位。 在一个实施方案中，表面充满了较高能量的电子束，使得电子产率大于1。 随后，表面被低能电子束淹没，使得电子产率小于1。 在另一个实施例中，衬底被提供有处于大于目标电位的初始电位的状态的表面。 然后用带电粒子充满表面，使得散射颗粒的电荷产率小于1，使得达到达到目标电势的稳定状态。 另一个实施例涉及一种用于将绝缘衬底的表面充电到目标电位的装置。

    Method for charging substrate to a potential
    7.
    发明申请
    Method for charging substrate to a potential 有权
    将基板充电到电位的方法

    公开(公告)号：US20060054815A1

    公开(公告)日：2006-03-16

    申请号：US10942184

    申请日：2004-09-16

    申请人： Kirk Bertsche ,  Mark McCord

    发明人： Kirk Bertsche ,  Mark McCord

    IPC分类号： G21K7/00

    CPC分类号： G21K7/00 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048

    摘要： A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.

    摘要翻译： 将绝缘基板的表面充电至目标电位。 在一个实施方案中，表面充满了较高能量的电子束，使得电子产率大于1。 随后，表面被低能电子束淹没，使得电子产率小于1。 在另一个实施例中，衬底被提供有处于大于目标电位的初始电位的状态的表面。 然后用带电粒子充满表面，使得散射颗粒的电荷产率小于1，使得达到达到目标电势的稳定状态。 另一个实施例涉及一种用于将绝缘体的表面充电至靶电位的装置。