公开(公告)号：US20090280634A1

公开(公告)日：2009-11-12

申请号：US12505907

申请日：2009-07-20

申请人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

发明人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

IPC分类号： H01L21/28

CPC分类号： H01L29/66462 ,  H01L29/0692 ,  H01L29/7785

摘要： A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.

摘要翻译： 提供半导体器件。 其中利用异质结的场效应晶体管的半导体器件形成在由包括半导体层的衬底的器件分离区域分割的器件形成区域中，该半导体层在半导体衬底上包括具有异质结的半导体层的同时被层叠。 器件分离区域由引入导电杂质的层构成，在器件分离区域上形成正电压的电极，特别是在器件分离区域的至少一部分的表面上 区域在场效应晶体管的外围。

公开(公告)号：US07977198B2

公开(公告)日：2011-07-12

申请号：US12505907

申请日：2009-07-20

申请人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

发明人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

IPC分类号： H01L21/336

CPC分类号： H01L29/66462 ,  H01L29/0692 ,  H01L29/7785

摘要： A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.

摘要翻译： 提供半导体器件。 其中利用异质结的场效应晶体管的半导体器件形成在由包括半导体层的衬底的器件分离区域分割的器件形成区域中，该衬底包括半导体衬底上具有异质结的半导体层。 器件分离区域由引入导电杂质的层构成，在器件分离区域上形成正电压的电极，特别是在器件分离区域的至少一部分的表面上 区域在场效应晶体管的外围。

公开(公告)号：US20060157734A1

公开(公告)日：2006-07-20

申请号：US11331292

申请日：2006-01-12

申请人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

发明人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

IPC分类号： H01L31/0328

CPC分类号： H01L29/66462 ,  H01L29/0692 ,  H01L29/7785

摘要： A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.

摘要翻译： 提供半导体器件。 其中利用异质结的场效应晶体管的半导体器件形成在由包括半导体层的衬底的器件分离区域分割的器件形成区域中，该衬底包括半导体衬底上具有异质结的半导体层。 器件分离区域由引入导电杂质的层构成，在器件分离区域上形成正电压的电极，特别是在器件分离区域的至少一部分的表面上 区域在场效应晶体管的外围。

公开(公告)号：US07579634B2

公开(公告)日：2009-08-25

申请号：US11331292

申请日：2006-01-12

申请人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

发明人： Koji Onodera ,  Mitsuhiro Nakamura ,  Tomoya Nishida

IPC分类号： H01L29/20

CPC分类号： H01L29/66462 ,  H01L29/0692 ,  H01L29/7785

摘要： A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.

摘要翻译： 提供半导体器件。 其中利用异质结的场效应晶体管的半导体器件形成在由包括半导体层的衬底的器件分离区域分割的器件形成区域中，该衬底包括半导体衬底上具有异质结的半导体层。 器件分离区域由引入导电杂质的层构成，在器件分离区域上形成正电压的电极，特别是在器件分离区域的至少一部分的表面上 区域在场效应晶体管的外围。

公开(公告)号：US20050212049A1

公开(公告)日：2005-09-29

申请号：US11079786

申请日：2005-03-14

申请人： Koji Onodera

发明人： Koji Onodera

IPC分类号： H01L27/04 ,  H01L21/337 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8232 ,  H01L23/60 ,  H01L23/62 ,  H01L29/00 ,  H01L29/772 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861

CPC分类号： H01L29/7787 ,  H01L27/0255 ,  H01L29/66462

摘要： A semiconductor device able to improve surge discharge capacity of a protection element (diodes in different direction each other) without changing parameter of a transistor and increasing cost drastically, having a transistor and a protection element at separated regions of semiconductor layers formed on a semiconductor substrate, which the semiconductor layers includes: a barrier layer of nondoped semiconductor formed on its surface with a gate electrode of the transistor; a first conductive type semiconductor region formed in a single or several semiconductor layers including the barrier layer as a topmost layer in a protection element side; and two second conductive type semiconductor regions formed at separated two regions in the barrier layer where the first conductive type semiconductor region is formed, which are formed with protection diodes of different direction each other at contacting surfaces with the first conductive type semiconductor region.

摘要翻译： 一种半导体器件能够在不改变晶体管的参数并大幅度提高成本的情况下提高保护元件（不同方向的二极管）的浪涌放电容量，在半导体衬底上形成半导体层的分离区域的晶体管和保护元件 其中半导体层包括：在其表面上形成有晶体管的栅电极的非掺杂半导体的势垒层; 第一导电型半导体区域，其形成在单个或多个半导体层中，包括作为保护元件侧中的最上层的阻挡层; 以及形成在形成第一导电型半导体区域的阻挡层中的分离的两个区域处的两个第二导电型半导体区域，其在与第一导电类型半导体区域的接触表面处形成有彼此不同方向的保护二极管。