公开(公告)号：US06509593B2

公开(公告)日：2003-01-21

申请号：US09750069

申请日：2000-12-29

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源极/漏极和存储单元区域中的电容器，然后将插头填充到触点中 孔，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。

公开(公告)号：US20060033734A1

公开(公告)日：2006-02-16

申请号：US10536328

申请日：2002-11-29

申请人： Koji Tani

发明人： Koji Tani

IPC分类号： G06T17/00

CPC分类号： G06T17/20 ,  G06F17/5018 ,  G06F2217/16

摘要： Based on rectangular element data constituting a boundary surface that separates a rotating machine into a stator-side portion and a rotor-side portion, and polygonal or polyhedral element data constituting the stator-side portion and the rotor-side portion excluding the boundary surface, tetrahedral elements including nodes of each of the stator-side portion and the rotor-side portion are created, a node is created at an arbitrary distance from the gravity of the rectangular element in a normal direction for each of the rectangular elements on the boundary surface, mesh division is performed for the tetrahedral elements based on the node at the arbitrary distance and nodes on the boundary surface, and mesh division is further performed based on nodes of the stator and the rotor.

摘要翻译： 基于构成将旋转机械分离成定子侧部分和转子侧部分的边界面的矩形元件数据，以及构成除了边界面之外的定子侧部分和转子侧部分的多边形或多面体元件数据， 产生包括定子侧部分和转子侧部分中的每一个的节点的四面体元件，在边界表面上的每个矩形元件沿垂直方向产生与矩形元件的重力任意距离的节点 基于任意距离的节点和边界表面上的节点对四面体元素进行网格分割，并且基于定子和转子的节点进一步进行网格划分。

公开(公告)号：US06533948B2

公开(公告)日：2003-03-18

申请号：US09790498

申请日：2001-02-23

申请人： Yoshikazu Kato ,  Koji Tani ,  Takanori Hashimoto

发明人： Yoshikazu Kato ,  Koji Tani ,  Takanori Hashimoto

IPC分类号： H01G400

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A reaction byproduct which is generated when a ferro-dielectric material film is etched is removed without giving adverse effect on the semiconductor element. After the etching of the ferro-dielectric material film, a wetting process may performed using an aqueous solution of phosphoric acid. After the ferro-dielectric material film is etched using the resist as the mask, the wetting process is also performed using the aqueous solution of phosphoric acid before and after the ashing of resist.

摘要翻译： 当蚀刻铁电介质材料膜时产生的反应副产物被除去而不对半导体元件产生不利影响。 在铁介电材料膜的蚀刻之后，可以使用磷酸水溶液进行润湿过程。 在使用抗蚀剂作为掩模蚀刻铁介电材料膜之后，还可以在抗蚀剂灰化前后使用磷酸水溶液进行润湿处理。

公开(公告)号：US5468993A

公开(公告)日：1995-11-21

申请号：US353345

申请日：1994-12-05

申请人： Koji Tani

发明人： Koji Tani

IPC分类号： H01L21/52 ,  H01L23/495 ,  H01L23/50 ,  H01L23/28

CPC分类号： H01L23/49503 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/01079

摘要： A semiconductor device includes a rectangular semiconductor chip bonded to a die pad of a lead frame in which a plurality of leads are arranged around the die pad. An area where the semiconductor ship is electrically connected with the leads around the semiconductor chip and the semiconductor chip are sealed with a resin. A distance between the semiconductor chip and a peripheral wall of the die pad is larger at a central portion of each side of the chip than at each corner of the chip. The leads are arranged such that a line connecting all lead ends is substantially parallel with the peripheral wall of the die pad.

摘要翻译： 半导体器件包括：接合到引线框架的管芯焊盘的矩形半导体芯片，其中多个引线布置在管芯焊盘周围。 将半导体船与半导体芯片周围的引线和半导体芯片电连接的区域用树脂密封。 半导体芯片和芯片焊盘的周壁之间的距离在芯片的每一侧的中心部分比在芯片的每个角落处更大。 引线被布置成使得连接所有引线端的线基本上平行于管芯焊盘的周壁。

公开(公告)号：US5060531A

公开(公告)日：1991-10-29

申请号：US451759

申请日：1989-12-18

申请人： Yuichi Iguchi ,  Koji Tani

发明人： Yuichi Iguchi ,  Koji Tani

IPC分类号： F04C18/16 ,  B05D3/12 ,  B05D5/08 ,  F04C18/08

CPC分类号： F04C18/084 ,  B05D3/12 ,  B05D5/083 ,  F05C2225/04 ,  Y10S74/10 ,  Y10T74/19698 ,  Y10T74/19823

摘要： One of male and female rotor elements is coated with a coating which is different in hardness from the other uncoated element. Even when the rotor elements come to contact with each other during the operation due to thermal expansion or the like, because of the difference in hardness between the coating and the other uncoated element, either of them which has a less degree of hardness is scraped off. As a result, accident due to contact between the male and female rotor elements can be prevented and the screw rotor can be operated with an optimum clearance between the elements.

公开(公告)号：US07394463B2

公开(公告)日：2008-07-01

申请号：US10536328

申请日：2002-11-29

申请人： Koji Tani

发明人： Koji Tani

IPC分类号： G06T17/00

CPC分类号： G06T17/20 ,  G06F17/5018 ,  G06F2217/16

摘要： Based on rectangular element data constituting a boundary surface that separates a rotating machine into a stator-side portion and a rotor-side portion, and polygonal or polyhedral element data constituting the stator-side portion and the rotor-side portion excluding the boundary surface, tetrahedral elements including nodes of each of the stator-side portion and the rotor-side portion are created, a node is created at an arbitrary distance from the gravity of the rectangular element in a normal direction for each of the rectangular elements on the boundary surface, mesh division is performed for the tetrahedral elements based on the node at the arbitrary distance and nodes on the boundary surface, and mesh division is further performed based on nodes of the stator and the rotor.

摘要翻译： 基于构成将旋转机械分离成定子侧部分和转子侧部分的边界面的矩形元件数据，以及构成除了边界面之外的定子侧部分和转子侧部分的多边形或多面体元件数据， 产生包括定子侧部分和转子侧部分中的每一个的节点的四面体元件，在边界表面上的每个矩形元件沿垂直方向产生与矩形元件的重力任意距离的节点 基于任意距离的节点和边界表面上的节点对四面体元素进行网格分割，并且基于定子和转子的节点进一步进行网格划分。

公开(公告)号：US06996511B2

公开(公告)日：2006-02-07

申请号：US10488466

申请日：2002-09-06

申请人： Koji Tani ,  Tetsuo Ogawa

发明人： Koji Tani ,  Tetsuo Ogawa

IPC分类号： G06T17/20

CPC分类号： G06T17/20 ,  G06F17/5018 ,  G06F2217/16 ,  G06T17/30

摘要： A two-dimensional mesh is generated on a plane perpendicular to the rotation axis. At this time, a ring-shaped gap is provided between the rotor and the stator, and portions facing the ring-shaped gap are equally divided into the same number of parts. An initial three-dimensional mesh is generated by joining together a plurality of two-dimensional meshes in the direction of the rotation axis while rotating the two-dimensional meshes. A boundary surface is formed in a cylindrical gap composed of a stack of the ring-shaped gaps, and a three-dimensional mesh is generated by filling the cylindrical gap with a plurality of polyhedrons, including polyhedrons comprising each of surface elements constituting the stator-side mesh surface, rotor-side mesh surface and boundary surface as one face.

摘要翻译： 在垂直于旋转轴的平面上产生二维网格。 此时，在转子和定子之间设置有环状的间隙，并且面对环状间隙的部分被分成相同数量的部件。 通过在旋转二维网格的同时将多个二维网格沿旋转轴线的方向连接在一起而产生初始的三维网格。 边界面形成在由一叠环状间隙构成的圆筒形间隙中，并且通过用多个多面体填充圆筒形间隙来产生三维网格，所述多面体包括构成定子 - 间隙的每个表面元件的多面体， 侧面网格表面，转子侧网格表面和边界面作为一面。

公开(公告)号：US20050055183A1

公开(公告)日：2005-03-10

申请号：US10488466

申请日：2002-09-06

申请人： Koji Tani ,  Tetsuo Ogawa

发明人： Koji Tani ,  Tetsuo Ogawa

IPC分类号： G06F17/50 ,  G06T17/20 ,  G06T17/30 ,  G06F17/10

CPC分类号： G06T17/20 ,  G06F17/5018 ,  G06F2217/16 ,  G06T17/30

摘要： A two-dimensional mesh is generated on a plane perpendicular to the rotation axis. At this time, a ring-shaped gap is provided between the rotor and the stator, and portions facing the ring-shaped gap are equally divided into the same number of parts. An initial three-dimensional mesh is generated by joining together a plurality of two-dimensional meshes in the direction of the rotation axis while rotating the two-dimensional meshes. A boundary surface is formed in a cylindrical gap composed of a stack of the ring-shaped gaps, and a three-dimensional mesh is generated by filling the cylindrical gap with a plurality of polyhedrons, including polyhedrons comprising each of surface elements constituting the stator-side mesh surface, rotor-side mesh surface and boundary surface as one face.

摘要翻译： 在垂直于旋转轴的平面上产生二维网格。 此时，在转子和定子之间设置有环状的间隙，并且面对环状间隙的部分被分成相同数量的部件。 通过在旋转二维网格的同时将多个二维网格沿旋转轴线的方向连接在一起而产生初始的三维网格。 边界面形成在由一叠环状间隙构成的圆筒形间隙中，并且通过用多个多面体填充圆筒形间隙来产生三维网格，所述多面体包括构成定子 - 间隙的每个表面元件的多面体， 侧面网格表面，转子侧网格表面和边界面作为一面。

公开(公告)号：US06913970B2

公开(公告)日：2005-07-05

申请号：US10303752

申请日：2002-11-26

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L23/522 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L21/20

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源/漏和存储单元区域中的电容器，然后将插头填充到接触孔 ，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。