公开(公告)号：US20070182407A1

公开(公告)日：2007-08-09

申请号：US11682841

申请日：2007-03-06

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R15/18 ,  G01R33/02

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向 。

公开(公告)号：US20060268469A1

公开(公告)日：2006-11-30

申请号：US11497378

申请日：2006-08-02

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

摘要翻译： 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US20060268468A1

公开(公告)日：2006-11-30

申请号：US11497352

申请日：2006-08-02

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

公开(公告)号：US07589528B2

公开(公告)日：2009-09-15

申请号：US11682841

申请日：2007-03-06

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/02

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。

公开(公告)号：US07362548B2

公开(公告)日：2008-04-22

申请号：US11497378

申请日：2006-08-02

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

摘要翻译： 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US20080160184A1

公开(公告)日：2008-07-03

申请号：US12043057

申请日：2008-03-05

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： B05D5/12 ,  H01F1/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

摘要翻译： 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US07187167B2

公开(公告)日：2007-03-06

申请号：US10846554

申请日：2004-05-17

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/09

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。

公开(公告)号：US07360302B2

公开(公告)日：2008-04-22

申请号：US11497352

申请日：2006-08-02

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

摘要翻译： 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US07170724B2

公开(公告)日：2007-01-30

申请号：US10686261

申请日：2003-10-16

申请人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

发明人： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

摘要翻译： 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US06904669B2

公开(公告)日：2005-06-14

申请号：US10052525

申请日：2002-01-23

申请人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

发明人： Hideki Sato ,  Toshiyuki Oohashi ,  Yukio Wakui ,  Susumu Yoshida ,  Kokichi Aiso

IPC分类号： G01R33/09 ,  H01F10/14 ,  H01F41/18 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/08 ,  H01L21/00

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49037 ,  Y10T428/32

摘要： On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.

摘要翻译： 在单个芯片上形成有多个磁阻效应元件，该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层，以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后，去除磁场。结果，通过磁场施加磁性层的剩余磁化，所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层，由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向 。