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公开(公告)号：US20090008034A1
公开(公告)日：2009-01-08
申请号：US12165871
申请日：2008-07-01
IPC分类号： H01L21/306
CPC分类号： H01J37/32633 , H01J37/321 , H01J37/32357
摘要： A plasma generation chamber and a processing chamber are isolated from each other by a barrier wall member disposed between them. The barrier wall member includes two plate members and stacked one on top of the other over a gap, a plurality of through holes and, via which hydrogen radicals are allowed to pass, are respectively formed at the plate member and the plate member. The through holes at one plate member are formed with an offset relative to the through holes formed at the other plate member and the plate members are both constituted of an insulating material that does not transmit ultraviolet light.
摘要翻译： 等离子体产生室和处理室通过设置在它们之间的阻挡壁构件相互隔离。 阻挡壁构件包括两个板构件，并且在间隙上彼此堆叠，在板构件和板构件上分别形成有多个通孔和通过氢自由基的通孔。 一个板构件的通孔相对于形成在另一个板构件上的通孔形成偏移，并且板构件均由不透射紫外线的绝缘材料构成。
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公开(公告)号：US20090188428A1
公开(公告)日：2009-07-30
申请号：US12361004
申请日：2009-01-28
申请人： Isamu SAKURAGI , Shigeru Tahara , Kumiko Yamazaki , Ryo Nonaka , Morihiro Takanashi , Eiichi Nishimura
发明人： Isamu SAKURAGI , Shigeru Tahara , Kumiko Yamazaki , Ryo Nonaka , Morihiro Takanashi , Eiichi Nishimura
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.
摘要翻译： 基板处理装置包括处理容器; 用于将基板安装在处理容器中的安装台; 设置在处理容器中的气体入口单元; 用于通过气体入口单元将含氢气体供应到处理容器中的气体供给机构; 设置在处理容器的气体排出口; 排气机构，用于通过排气口排出处理容器的内部; 设置在处理容器中的催化剂; 以及用于加热催化剂的加热单元。 通过含氢气体和高温催化剂之间的催化裂化反应在处理容器中形成氢根，并且通过氢原子处理衬底。
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公开(公告)号：US20090188892A1
公开(公告)日：2009-07-30
申请号：US12353365
申请日：2009-01-14
IPC分类号： C23F1/00
CPC分类号： H01L21/6708 , H01L21/67253
摘要： A method of checking a substrate edge processing apparatus, which can accurately check the state of the substrate edge processing apparatus. The thickness of an organic film formed on a surface of a substrate is measured, and a predetermined process in which undesired substance attached to an edge of the substrate is removed is carried out on a predetermined portion of the organic film using the substrate edge processing apparatus. The film thickness of the predetermined portion is then measured. The removal amount of the organic film is calculated based on the measurement results, and the performance of the substrate edge processing apparatus is evaluated based on the calculated removal amount.
摘要翻译： 一种检查基板边缘处理装置的方法，其可以精确地检查基板边缘处理装置的状态。 测量在基板表面上形成的有机膜的厚度，并且使用基板边缘处理装置在有机膜的预定部分上进行除去附着到基板的边缘的不希望的物质的预定处理 。 然后测量预定部分的膜厚度。 基于测量结果计算有机膜的去除量，并且基于计算的去除量来评价基板边缘处理装置的性能。
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公开(公告)号：US20080233766A1
公开(公告)日：2008-09-25
申请号：US12052239
申请日：2008-03-20
CPC分类号： H01L21/67069 , H01J37/32449 , H01J2237/2001 , H01L21/31138
摘要： An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a pre-ashing process, performed prior to the main ashing process, for ashing the target substrate for a time period while maintaining the target substrate at a temperature in a range of from about 80 to 150° C.
摘要翻译： 在真空处理室中通过使用图案化的抗蚀剂膜作为掩模等离子体蚀刻低k膜的一部分来施加目标基板的灰化方法。 该方法包括去除真空处理室中的抗蚀剂膜的过程，以及在主灰化过程之前进行的预灰化处理，用于在目标衬底处于一定时间期间灰化目标衬底一段时间，同时将靶衬底保持在 范围为约80至150℃
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公开(公告)号：US07892986B2
公开(公告)日：2011-02-22
申请号：US12052239
申请日：2008-03-20
IPC分类号： H01L21/26
CPC分类号： H01L21/67069 , H01J37/32449 , H01J2237/2001 , H01L21/31138
摘要： An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a pre-ashing process, performed prior to the main ashing process, for ashing the target substrate for a time period while maintaining the target substrate at a temperature in a range of from about 80 to 150° C.
摘要翻译： 在真空处理室中通过使用图案化的抗蚀剂膜作为掩模等离子体蚀刻低k膜的一部分来施加目标基板的灰化方法。 该方法包括去除真空处理室中的抗蚀剂膜的过程，以及在主灰化过程之前进行的预灰化处理，用于在目标衬底处于一定时间期间灰化目标衬底一段时间，同时将靶衬底保持在 范围为约80至150℃
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6.发明申请PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开等离子体蚀刻方法，等离子体蚀刻装置，控制程序和计算机可读存储介质公开(公告)号：US20070197040A1
公开(公告)日：2007-08-23
申请号：US11677736
申请日：2007-02-22
IPC分类号： H01L21/461 , H01L21/302 , C23F1/00
CPC分类号： H01L21/31116
摘要： A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic layer as a mask. The plasma is generated from a processing gas at least including a C6F6 gas, a rare gas and an oxygen gas, and a flow rate ratio of the oxygen gas to the C6F6 gas (an oxygen gas flow rate/a C6F6 gas flow rate) is set to be about 2.8 to 3.3.
摘要翻译： 等离子体蚀刻方法包括在使用有机层作为掩模的同时，通过使用等离子体对形成在待加工基板上的含硅电介质层进行等离子体蚀刻的步骤。 等离子体由至少包括C 6 6 F 6气体，稀有气体和氧气的处理气体以及氧气与 C 6 6 C 6气体（氧气流量/ C 6 6 F 6气体流量） 设定在2.8到3.3左右。
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