公开(公告)号：US20090188428A1

公开(公告)日：2009-07-30

申请号：US12361004

申请日：2009-01-28

申请人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

发明人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

IPC分类号： B05C13/00 ,  B01J19/00

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.

摘要翻译： 基板处理装置包括处理容器; 用于将基板安装在处理容器中的安装台; 设置在处理容器中的气体入口单元; 用于通过气体入口单元将含氢气体供应到处理容器中的气体供给机构; 设置在处理容器的气体排出口; 排气机构，用于通过排气口排出处理容器的内部; 设置在处理容器中的催化剂; 以及用于加热催化剂的加热单元。 通过含氢气体和高温催化剂之间的催化裂化反应在处理容器中形成氢根，并且通过氢原子处理衬底。

公开(公告)号：US20080233766A1

公开(公告)日：2008-09-25

申请号：US12052239

申请日：2008-03-20

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

IPC分类号： H01L21/02 ,  B05C11/00

CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J2237/2001 ,  H01L21/31138

摘要： An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a pre-ashing process, performed prior to the main ashing process, for ashing the target substrate for a time period while maintaining the target substrate at a temperature in a range of from about 80 to 150° C.

摘要翻译： 在真空处理室中通过使用图案化的抗蚀剂膜作为掩模等离子体蚀刻低k膜的一部分来施加目标基板的灰化方法。 该方法包括去除真空处理室中的抗蚀剂膜的过程，以及在主灰化过程之前进行的预灰化处理，用于在目标衬底处于一定时间期间灰化目标衬底一段时间，同时将靶衬底保持在 范围为约80至150℃

公开(公告)号：US07892986B2

公开(公告)日：2011-02-22

申请号：US12052239

申请日：2008-03-20

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Kumiko Yamazaki

IPC分类号： H01L21/26

CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J2237/2001 ,  H01L21/31138

摘要： An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a pre-ashing process, performed prior to the main ashing process, for ashing the target substrate for a time period while maintaining the target substrate at a temperature in a range of from about 80 to 150° C.

摘要翻译： 在真空处理室中通过使用图案化的抗蚀剂膜作为掩模等离子体蚀刻低k膜的一部分来施加目标基板的灰化方法。 该方法包括去除真空处理室中的抗蚀剂膜的过程，以及在主灰化过程之前进行的预灰化处理，用于在目标衬底处于一定时间期间灰化目标衬底一段时间，同时将靶衬底保持在 范围为约80至150℃

公开(公告)号：US08349085B2

公开(公告)日：2013-01-08

申请号：US12023327

申请日：2008-01-31

申请人： Shigeru Tahara ,  Seiichi Takayama ,  Morihiro Takanashi

发明人： Shigeru Tahara ,  Seiichi Takayama ,  Morihiro Takanashi

IPC分类号： C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/401 ,  C23C16/4401 ,  H01L21/3105 ,  H01L21/6719 ,  H01L21/67748

摘要： A substarate processing apparatus capable of reducing the capacity of a space in an internal chamber. The internal chamber is housed in a space in an external chamber. A gas supply unit supplies a process gas into the space in the internal chamber. The space in the external chamber is under a reduced pressure or filled with an inert gas. An enclosure being movable and included in the internal chamber defines the space in the internal chamber with a stage heater included in the internal chamber. When a wafer is transferred in and out by a transfer arm used to transfer the wafer, the enclosure exits out of a motion range within which the transfer arm can move.

摘要翻译： 能够降低内部空间的容量的基本处理装置。 内部腔室容纳在外部空间中。 气体供应单元将处理气体供应到内部室中的空间中。 外部室内的空间处于减压状态或填充惰性气体。 可移动并且包括在内部室中的外壳限定内部室中的空间，其中包括在内部室中的阶段加热器。 当晶片通过用于传送晶片的转移臂传入和移出时，外壳离开传送臂可移动的运动范围。

公开(公告)号：US20140083979A1

公开(公告)日：2014-03-27

申请号：US14116952

申请日：2012-05-10

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： B05D3/14

CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

公开(公告)号：US20110174337A1

公开(公告)日：2011-07-21

申请号：US13010203

申请日：2011-01-20

申请人： Eiichi NISHIMURA ,  Shigeru Tahara ,  Fumiko Yamashita

发明人： Eiichi NISHIMURA ,  Shigeru Tahara ,  Fumiko Yamashita

IPC分类号： B08B7/00

CPC分类号： H01L21/02057

摘要： A method for recovering a shape of patterns, formed etching on a silicon substrate by etching, by removing foreign substances grown between the patterns is provided. The method includes heating the silicon substrate accommodated in a chamber to a temperature of about 160° C. or higher.

摘要翻译： 提供了一种用于恢复图案形状的方法，通过蚀刻在硅衬底上形成的蚀刻，通过去除在图案之间生长的异物。 该方法包括将容纳在室中的硅衬底加热至约160℃或更高的温度。

公开(公告)号：US09126229B2

公开(公告)日：2015-09-08

申请号：US14116952

申请日：2012-05-10

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： B05D3/14 ,  H01L21/02 ,  H01L21/311

CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

公开(公告)号：US09177781B2

公开(公告)日：2015-11-03

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/02

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US20120270406A1

公开(公告)日：2012-10-25

申请号：US13446006

申请日：2012-04-13

申请人： Shigeru Tahara ,  Eiichi Nishimura

发明人： Shigeru Tahara ,  Eiichi Nishimura

IPC分类号： B08B7/00 ,  H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32853

摘要： A plasma processing apparatus in which a cleaning method is performed includes a plasma generating chamber, having a silicon-containing member, for generating therein plasma by exciting a processing gas; a plasma processing chamber communicating with the plasma generating chamber via a partition member; and a high frequency antenna, having a planar shape, provided at an outside of a dielectric window of the plasma generating chamber. The cleaning method includes exciting a hydrogen-containing processing gas into plasma in the plasma generating chamber, introducing hydrogen radicals in the plasma into the plasma processing chamber through the partition member, performing a plasma process on a processing target substrate by allowing the hydrogen radicals to act on the processing target substrate, unloading the processing target substrate, and removing silicon-based deposits generated in the plasma generating chamber by introducing a tetrafluoride (tetrafluoromethane) gas into the plasma generating chamber.

摘要翻译： 其中执行清洁方法的等离子体处理装置包括：具有含硅构件的等离子体产生室，用于通过激发处理气体在其中产生等离子体; 等离子体处理室，其经由分隔构件与等离子体产生室连通; 以及设置在等离子体发生室的电介质窗口的外侧的具有平面形状的高频天线。 清洗方法包括在等离子体发生室中激发含氢处理气体进入等离子体，通过分隔构件将等离子体中的氢自由基引入等离子体处理室中，通过使氢自由基进入等离子体处理工艺 作用于处理对象基板，卸载处理对象基板，以及通过将四氟（四氟甲烷）气体引入到等离子体产生室中来除去在等离子体发生室中产生的硅基沉积物。

公开(公告)号：US08614140B2

公开(公告)日：2013-12-24

申请号：US13329677

申请日：2011-12-19

申请人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

发明人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

IPC分类号： H01L21/3205 ,  H01L21/308

CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing apparatus includes: an etching processing mechanism for performing an etching process that etches a low dielectric insulating film formed on a substrate; a CO2 plasma processing mechanism for performing a CO2 plasma process that exposes the substrate to CO2 plasma after the etching process; a polarization reducing mechanism for performing a polarization reducing process that reduces polarization in the low dielectric insulating film after the CO2 plasma process; and a transfer mechanism for transferring the substrate.

摘要翻译： 提供一种半导体器件制造装置，其能够回收暴露于CO 2等离子体的低介电绝缘膜的损坏，以获得处于良好状态的低介电绝缘膜，从而提高半导体器件的性能和可靠性。 半导体器件制造装置包括：蚀刻处理机构，用于进行蚀刻形成在基板上的低介电绝缘膜的蚀刻工艺; CO 2等离子体处理机构，用于执行在蚀刻工艺之后将衬底暴露于CO 2等离子体的CO 2等离子体工艺; 用于进行降低CO 2等离子体处理后的低介电绝缘膜的偏振的偏振降低处理的偏振减小机构; 以及用于转印衬底的转印机构。