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1.发明申请Polishing composition for semiconductor wafer, method for production thereof and polishing method 失效半导体晶片抛光组合物及其制造方法及研磨方法公开(公告)号：US20080287038A1
公开(公告)日：2008-11-20
申请号：US12153111
申请日：2008-05-14
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.
摘要翻译： 本发明涉及一种用于基板的抛光组合物，其包括形成在半导体晶片上的诸如布线等的金属，其能够提供高的抛光速率而不会在布线金属上产生划痕，制造抛光组合物的方法， 和抛光方法。 用于半导体晶片的抛光组合物包括酸和包含在其表面上结合有含氨基的硅烷偶联剂的带正电荷的二氧化硅颗粒的水性介质分散体，该抛光组合物的pH为2至6。
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2.发明授权Polishing composition for semiconductor wafer, method for production thereof and polishing method 失效半导体晶片抛光组合物及其制造方法及研磨方法公开(公告)号：US07753974B2
公开(公告)日：2010-07-13
申请号：US12153111
申请日：2008-05-14
IPC分类号： B24D3/02 , C09C1/68 , C09C1/02 , C09K3/14 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.
摘要翻译： 本发明涉及一种用于基板的抛光组合物，其包括形成在半导体晶片上的诸如布线等的金属，其能够提供高的抛光速率而不会在布线金属上产生划痕，制造抛光组合物的方法， 和抛光方法。 用于半导体晶片的抛光组合物包括酸和包含在其表面上结合有含氨基的硅烷偶联剂的带正电荷的二氧化硅颗粒的水性介质分散体，该抛光组合物的pH为2至6。
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公开(公告)号：US20080311750A1
公开(公告)日：2008-12-18
申请号：US12081829
申请日：2008-04-22
IPC分类号： H01L21/304 , B24B1/00 , C09K3/14
CPC分类号： H01L21/02024 , B24B37/044 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.
摘要翻译： 本发明涉及抛光性优异的半导体晶片用研磨用组合物及研磨方法。 用于半导体晶片的抛光组合物包括由长轴与短轴的比率为1.5至15的非球形二氧化硅颗粒组成的胶体二氧化硅。半导体晶片的抛光方法使用抛光组合物。 抛光组合物与使用球形胶体二氧化硅的抛光组合物相比可以提供非常高的抛光速率，并且可以提供良好的镜面抛光而不会产生划痕。 此外，小的碱金属含量可以减少半导体晶片的不利影响，例如抛光后的残留磨料。
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4.发明申请公开(公告)号：US20090223136A1
公开(公告)日：2009-09-10
申请号：US12230353
申请日：2008-08-28
IPC分类号： C09K3/14
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463
摘要： The polishing compound for semiconductor wafer of the present invention contains colloidal silica composed of silica particles to which tetraethylammonium is fixed, and concentration of silica particles dispersed in water is between 0.5 to 50 weight %. Concentration of tetraethylammonium contained in silica particles to which tetraethylammonium is fixed is desirable to be in the range from 5×10−4 to 2.5×10−2 as indicated by molar ratio of tetraethylammonium/silica.
摘要翻译： 本发明的半导体晶片用抛光剂含有固定有四乙基铵的二氧化硅粒子，分散在水中的二氧化硅粒子浓度为0.5〜50重量％的胶体二氧化硅。 固定四乙基铵的二氧化硅颗粒中所含的四乙基铵的浓度优选为5×10-4至2.5×10-2的范围，如四乙基铵/二氧化硅的摩尔比所示。
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公开(公告)号：US08114178B2
公开(公告)日：2012-02-14
申请号：US12081829
申请日：2008-04-22
CPC分类号： H01L21/02024 , B24B37/044 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.
摘要翻译： 本发明涉及抛光性优异的半导体晶片用研磨用组合物及研磨方法。 用于半导体晶片的抛光组合物包括由长轴与短轴的比率为1.5至15的非球形二氧化硅颗粒组成的胶体二氧化硅。半导体晶片的抛光方法使用抛光组合物。 抛光组合物与使用球形胶体二氧化硅的抛光组合物相比可以提供非常高的抛光速率，并且可以提供良好的镜面抛光而不会产生划痕。 此外，小的碱金属含量可以减少半导体晶片的不利影响，例如抛光后的残留磨料。
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6.发明授权Fused spherical silica for liquid sealant and liquid sealing resin composition 有权熔融球状二氧化硅用于液体密封剂和液体密封树脂组合物公开(公告)号：US06303223B1
公开(公告)日：2001-10-16
申请号：US09551600
申请日：2000-04-17
IPC分类号： B32B516
CPC分类号： C04B26/10 , C01B33/126 , C04B14/062 , C04B18/021 , C04B38/009 , C09K3/10 , C09K3/1018 , C09K2200/0247 , C09K2200/0617 , C09K2200/0647 , Y10T428/2993 , Y10T428/2998 , C04B35/14 , C04B20/002
摘要： The present invention relates to fused spherical silica for liquid sealant which has a particle size distribution such that maximum particle size is 24 &mgr;m, average particle size is 2 to 7 &mgr;m, and the proportion of particles having a particle size of 1 &mgr;m or less is 1% by weight or less, and the silica has a BET specific surface area of 3 m2/g or less. Fused spherical silica filler of the present invention for liquid sealant can be blended with an epoxy resin or silicone resin which is liquid at normal temperature in high proportion, and can minimize the coefficient of linear expansion of a liquid sealing resin composition.
摘要翻译： 本发明涉及用于液体密封剂的熔融球状二氧化硅，其具有使最大粒径为24μm，平均粒径为2〜7μm的粒径分布，粒径为1μm以下的粒子的比例为 1重量％以下，二氧化硅的BET比表面积为3m 2 / g以下。 用于液体密封剂的本发明的熔融球形二氧化硅填料可以与常规温度为高比例液体的环氧树脂或有机硅树脂共混，并可使液体密封树脂组合物的线性膨胀系数最小化。
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7.发明授权Fused spherical silica, method for producing same and liquid sealing resin composition 失效熔融球状二氧化硅，其制备方法和液体密封树脂组合物公开(公告)号：US06365649B1
公开(公告)日：2002-04-02
申请号：US09551599
申请日：2000-04-17
申请人： Yutaka Kinose , Shinsuke Miyabe , Takeshi Sakamoto
发明人： Yutaka Kinose , Shinsuke Miyabe , Takeshi Sakamoto
IPC分类号： C08K336
摘要： The present invention relates to a fused spherical silica having a maximum particle size of 45 &mgr;m, an average particle size of 2 to 10 &mgr;m, and a ratio of a specific surface area Sw1 of the particles to a theoretical specific surface area Sw2 of the particles, Sw1/Sw2, of 1.0 to 2.5, the surface of the particles being smooth. The present invention can provide a liquid sealing resin composition having sufficiently low viscosity for sealing a slight gap between a substrate and an IC chip and also having high reliability, and a fused spherical silica filler to be filled therein.
摘要翻译： 本发明涉及最大粒度为45μm，平均粒径为2〜10μm的熔融球状二氧化硅，以及颗粒的比表面积Sw1与颗粒的理论比表面积Sw2的比率 ，Sw1 / Sw2为1.0〜2.5，颗粒表面光滑。 本发明可以提供一种液体密封树脂组合物，其具有足够低的粘度，用于密封基板和IC芯片之间的微小间隙，并且还具有高可靠性，以及要填充的熔融球形二氧化硅填料。
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8.发明授权公开(公告)号：US06395807B1
公开(公告)日：2002-05-28
申请号：US09547406
申请日：2000-04-11
申请人： Yutaka Kinose , Shinsuke Miyabe , Takeshi Sakamoto
发明人： Yutaka Kinose , Shinsuke Miyabe , Takeshi Sakamoto
IPC分类号： C08L6300
CPC分类号： H01L23/295 , C01P2004/61 , C01P2006/12 , C04B14/062 , C04B26/02 , C04B2111/00672 , C08K3/36 , C09C1/3072 , C09C1/3081 , H01L2924/0002 , C08L63/00 , H01L2924/00
摘要： The fine spherical silica having a particle size distribution in which maximum particle diameter is 24 &mgr;m, average particle diameter is 1.7 to 7 &mgr;m, and the proportion X1 of particles having a particle diameter of 3 &mgr;m or less in the total particles is 100/D50 to (18+100/D50) wt %, and the viscosity at 50° C. of a mixture obtained by blending a maximum of 80 wt % of the fine spherical silica with a liquid epoxy resin or silicone resin at room temperature is 20 Pa·s or less is provided. The spherical silica is useful as a filler for sealing resin composition which has excellent gap permeability and seals slight gaps, between a substrate and an IC chip and has high reliability.
摘要翻译： 具有最大粒径为24μm，平均粒径为1.7〜7μm的粒径分布的微球状二氧化硅，总粒子的粒径为3μm以下的粒子的比例X1为100 / D50 至（18 + 100 / D50）重量％，并且通过在室温下混合最多80重量％的细球形二氧化硅与液体环氧树脂或有机硅树脂获得的混合物在50℃下的粘度为20Pa .s或更小。 球形二氧化硅可用作密封树脂组合物的填料，其具有优异的间隙渗透性并且在基板和IC芯片之间密封轻微的间隙并具有高可靠性。
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