公开(公告)号：US20080174856A1

公开(公告)日：2008-07-24

申请号：US12018034

申请日：2008-01-22

申请人： Kyoko Matsuda ,  Toshiyuki Okumura

发明人： Kyoko Matsuda ,  Toshiyuki Okumura

IPC分类号： G02F1/39

CPC分类号： H01S5/50 ,  H01S5/024 ,  H01S5/02415 ,  H01S5/0609 ,  H01S5/06251 ,  H01S5/06821 ,  H01S5/0683 ,  H01S2301/02

摘要： An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.

摘要翻译： 有源层具有由InGaAsP形成的量子阱结构，并且包括可饱和吸收区域和光学放大区域。 对于可饱和吸收区域，通过p电极施加电压，与光放大区域无关。 对于光放大区域，电流分别通过p电极注入。 通过将白噪声的光噪声添加到假设二进制光强度为“1”或“0”的光信号中，产生通过入射平面进入的输入光引脚。 可饱和吸收区域和光放大区域形成为波形转换元件提供双稳半导体激光器的条件。

公开(公告)号：US07274010B2

公开(公告)日：2007-09-25

申请号：US11217590

申请日：2005-08-31

申请人： Kyoko Matsuda ,  Toshiyuki Okumura

发明人： Kyoko Matsuda ,  Toshiyuki Okumura

IPC分类号： H01J43/00 ,  H01L31/00 ,  H01S3/00

CPC分类号： H01S5/50 ,  H01L31/101 ,  H01S5/0601 ,  H01S5/5027 ,  H03F3/08

摘要： A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.

摘要翻译： 半导体光放大器装置包括有源层，n型InP衬底，n型InP包覆层，p型InP覆盖层，p电极和n电极。 有源层由例如InGaAsP制成，并且包括饱和吸收区域和光学放大区域。 普通的调制电流通过p电极注入每个光放大区域。 调制电流通过p电极而不依赖于光放大区域而注入可饱和吸收区域。 有源层接收通过向外部施加的光信号增加附加噪声光而产生的注入光，并且发射通过放大注入光产生的输出光。

公开(公告)号：US20060049336A1

公开(公告)日：2006-03-09

申请号：US11217590

申请日：2005-08-31

申请人： Kyoko Matsuda ,  Toshiyuki Okumura

发明人： Kyoko Matsuda ,  Toshiyuki Okumura

IPC分类号： H03F3/08

CPC分类号： H01S5/50 ,  H01L31/101 ,  H01S5/0601 ,  H01S5/5027 ,  H03F3/08

摘要： A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.

摘要翻译： 半导体光放大器装置包括有源层，n型InP衬底，n型InP包覆层，p型InP覆盖层，p电极和n电极。 有源层由例如InGaAsP制成，并且包括饱和吸收区域和光学放大区域。 普通的调制电流通过p电极注入每个光放大区域。 调制电流通过p电极而不依赖于光放大区域而注入可饱和吸收区域。 有源层接收通过向外部施加的光信号增加附加噪声光而产生的注入光，并且发射通过放大注入光产生的输出光。

公开(公告)号：US07515624B2

公开(公告)日：2009-04-07

申请号：US10697001

申请日：2003-10-31

申请人： Kyoko Matsuda ,  Toshiyuki Okumura

发明人： Kyoko Matsuda ,  Toshiyuki Okumura

IPC分类号： H01S5/00

CPC分类号： H01S5/0601 ,  H01S5/0425 ,  H01S5/06251 ,  H01S5/0652 ,  H01S5/32308 ,  H01S5/32341

摘要： A semiconductor laser device has an active layer which is divided into two regions in the direction of a resonator, i.e., a light-amplifying region and a saturable absorber region. The light-amplifying region and the saturable absorber region are produced to allow the semiconductor laser device to be in a bistable state. For the light-amplifying region and the saturable absorber region respectively, p-electrodes are separately and independently formed. N-electrodes are provided in relation to the p-electrodes. From one of the p-electrodes, a current which is modulated with noise added thereto is injected.

摘要翻译： 半导体激光器件具有在谐振器的方向上分为两个区域的有源层，即光放大区域和可饱和吸收区域。 制造光放大区域和可饱和吸收体区域，以使半导体激光器件处于双稳态。 对于光放大区域和可饱和吸收体区域，分别独立地形成p电极。 相对于p电极提供N电极。 从p电极中的一个注入被加到其上的噪声调制的电流。

公开(公告)号：US07199398B2

公开(公告)日：2007-04-03

申请号：US10719739

申请日：2003-11-20

申请人： Tomoki Ono ,  Shigetoshi Ito ,  Toshiyuki Okumura ,  Hirokazu Mouri ,  Kyoko Matsuda ,  Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Yoshihiko Tani

发明人： Tomoki Ono ,  Shigetoshi Ito ,  Toshiyuki Okumura ,  Hirokazu Mouri ,  Kyoko Matsuda ,  Toshiyuki Kawakami ,  Takeshi Kamikawa ,  Yoshihiko Tani

IPC分类号： H01L29/10 ,  H01L29/22 ,  H01L21/00 ,  H01S3/097

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/32341

摘要： A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

摘要翻译： 氮化物半导体发光器件至少包括衬底，由主要包含In和Ga的氮化物半导体形成的有源层，p电极和n电极。 p电极和n电极中的至少一个电分离成至少两个区域。

公开(公告)号：US20130010294A1

公开(公告)日：2013-01-10

申请号：US13531140

申请日：2012-06-22

申请人： Kyoko MATSUDA ,  Toshiyuki Okumura

发明人： Kyoko MATSUDA ,  Toshiyuki Okumura

IPC分类号： G01J3/28

CPC分类号： G01N21/3563

摘要： There is provided an optical measurement analysis device capable of applying light to substantially the entire surface of a to-be-analyzed object for improving the analysis accuracy. The optical measurement analysis device according to the present embodiment includes a container, a light source, a light irradiation unit, a light reception unit, a spectroscope unit, and an analyzing unit for analyzing an optical spectrum obtained by the spectroscope unit. The container has an inner wall adapted to reflect light reflected by the to-be-analyzed object and light transmitted therethrough.

摘要翻译： 提供了一种光学测量分析装置，其能够基本上对待分析对象的整个表面施加光，以提高分析精度。 根据本实施例的光学测量分析装置包括容器，光源，光照射单元，光接收单元，分光单元和用于分析由分光单元获得的光谱的分析单元。 该容器具有适于反射由被分析物体反射的光的内壁和透过其中的光。

公开(公告)号：US07864412B2

公开(公告)日：2011-01-04

申请号：US12018034

申请日：2008-01-22

申请人： Kyoko Matsuda ,  Toshiyuki Okumura

发明人： Kyoko Matsuda ,  Toshiyuki Okumura

IPC分类号： H01S5/00 ,  H04B10/12

CPC分类号： H01S5/50 ,  H01S5/024 ,  H01S5/02415 ,  H01S5/0609 ,  H01S5/06251 ,  H01S5/06821 ,  H01S5/0683 ,  H01S2301/02

摘要： An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.

摘要翻译： 有源层具有由InGaAsP形成的量子阱结构，并且包括可饱和吸收区域和光学放大区域。 对于可饱和吸收区域，通过p电极施加电压，与光放大区域无关。 对于光放大区域，电流分别通过p电极注入。 通过将白噪声的光噪声添加到假设二进制光强度为“1”或“0”的光信号中，产生通过入射平面进入的输入光引脚。 可饱和吸收区域和光放大区域形成为波形转换元件提供双稳半导体激光器的条件。