公开(公告)号：US20070090156A1

公开(公告)日：2007-04-26

申请号：US11258650

申请日：2005-10-25

申请人： Lakshmi Ramanathan ,  Terry Daly ,  Jason Fender

发明人： Lakshmi Ramanathan ,  Terry Daly ,  Jason Fender

IPC分类号： A47J36/02

CPC分类号： H01L24/13 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/11 ,  H01L2221/68372 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/11003 ,  H01L2224/1147 ,  H01L2224/11552 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/013

摘要： A method is provided for forming a microelectronic assembly. A semiconductor substrate having a first thickness is mounted to a support substrate with a low temperature adhesive. The semiconductor substrate is thinned from the first thickness to a second thickness. At least one contact formation is formed on the semiconductor substrate, and high energy electromagnetic radiation is directed onto the at least one contact formation to reflow the at least one contact formation.

摘要翻译： 提供了一种用于形成微电子组件的方法。 具有第一厚度的半导体衬底用低温粘合剂安装到支撑衬底上。 半导体衬底从第一厚度变薄到第二厚度。 在半导体衬底上形成至少一个接触层，并将高能电磁辐射引导到至少一个接触层上，以回流至少一个接触层。