公开(公告)号：US20230307327A1

公开(公告)日：2023-09-28

申请号：US18324673

申请日：2023-05-26

申请人： Texas Instruments Incorporated

发明人： Rafael Jose Lizares GUEVARA ,  Jovenic Romero ESQUEJO ,  Arvin Cedric Quiambao MALLARI

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/4952 ,  H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/81815 ,  H01L2224/13011 ,  H01L2224/13564 ,  H01L2224/11552

摘要： In some examples, a quad flat no lead (QFN) semiconductor package comprises a flip chip semiconductor die having a surface and circuitry formed in the surface; and a conductive pillar coupled to the semiconductor die surface. The conductive pillar has a distal end relative to the semiconductor die, the distal end having a cavity including a cavity floor and one or more cavity walls circumscribing the cavity floor. The one or more cavity walls are configured to contain solder.

公开(公告)号：US09111924B2

公开(公告)日：2015-08-18

申请号：US14225963

申请日：2014-03-26

申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives

发明人： Abdelkader Aliane

IPC分类号： H01L21/44 ,  H01L23/528 ,  H01L23/498 ,  H01L23/34 ,  H01L23/00 ,  H01L21/768

CPC分类号： H01L23/49811 ,  H01L21/76885 ,  H01L23/345 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/98 ,  H01L2224/10175 ,  H01L2224/11552 ,  H01L2224/1183 ,  H01L2224/13011 ,  H01L2224/13075 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/8114 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81234 ,  H01L2224/81238 ,  H01L2224/81385 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/00

摘要： A method of forming a hybridized device including forming a first component provided with metal bumps, and a second component provided with connection elements, attaching the bumps to the connection elements. The manufacturing of the second component includes forming, on a surface of a substrate, resistive elements at the locations provided for the connection elements; depositing an electric insulator layer at least on the resistive elements; and forming the connection elements, each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper. Further, the attachment of the balls to the connection elements comprises applying an electric current through the resistive elements to heat the bumps.

摘要翻译： 一种形成杂化装置的方法，包括形成设置有金属凸块的第一部件，以及设置有连接元件的第二部件，将凸块连接到连接元件。 第二部件的制造包括在基板的表面上在为连接元件提供的位置处形成电阻元件; 至少在所述电阻元件上沉积电绝缘体层; 并且形成连接元件，每个连接元件包括具有开口的金属孔，该开口能够接收第一微电子元件的相应的金属凸块，并且至少部分地填充有可熔元件，特别是铟或锡和金的合金，或与导电 油墨，特别是基于银或铜。 此外，将球附接到连接元件包括施加电流通过电阻元件以加热凸块。

公开(公告)号：US20090301771A1

公开(公告)日：2009-12-10

申请号：US12477227

申请日：2009-06-03

申请人： Shozo Ochi ,  Kazuya Ushirokawa ,  Takayuki Higuchi

发明人： Shozo Ochi ,  Kazuya Ushirokawa ,  Takayuki Higuchi

IPC分类号： H05K1/16 ,  H05K1/11 ,  H01R43/02

CPC分类号： H05K3/4007 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/90 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/11552 ,  H01L2224/11554 ,  H01L2224/116 ,  H01L2224/11901 ,  H01L2224/13016 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16 ,  H01L2224/83192 ,  H01L2224/90 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H05K1/095 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2201/09827 ,  H05K2203/0514 ,  H05K2203/1476 ,  Y10T29/49213 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/3512 ,  H01L2924/00

摘要： A conductive bump formed on an electrode of an electronic component. The conductive bump is composed of a first bump having one or more layers formed on the electrode and including resin containing at least a spherical-shaped conductive filler, and a second bump formed on an upper surface of the first bump and including photosensitive resin containing a scale-shaped conductive filler.

摘要翻译： 形成在电子部件的电极上的导电凸块。 导电凸块由在电极上形成有一层或多层的第一凸块组成，并且包括至少包含球形导电填料的树脂和形成在第一凸块的上表面上的第二凸块，并且包括含有 鳞片状导电填料。

公开(公告)号：US20160365328A1

公开(公告)日：2016-12-15

申请号：US14736943

申请日：2015-06-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Richard S. GRAF ,  Jay F. LEONARD ,  David J. WEST ,  Charles H. WILSON

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L21/56

CPC分类号： H01L24/17 ,  H01L21/563 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/11332 ,  H01L2224/11442 ,  H01L2224/11505 ,  H01L2224/11552 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/14135 ,  H01L2224/14155 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/17104 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81986 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2924/20645 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Sintered connection structures and methods of manufacture are disclosed. The method includes placing a powder on a substrate and sintering the powder to form a plurality of pillars. The method further includes repeating the placing and sintering steps until the plurality of pillars reach a predetermined height. The method further includes forming a solder cap on the plurality of pillars. The method further includes joining the substrate to a board using the solder cap.

公开(公告)号：US20140210076A1

公开(公告)日：2014-07-31

申请号：US14225963

申请日：2014-03-26

申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives

发明人： Abdelkader ALIANE

IPC分类号： H01L23/498 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L23/49811 ,  H01L21/76885 ,  H01L23/345 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/98 ,  H01L2224/10175 ,  H01L2224/11552 ,  H01L2224/1183 ,  H01L2224/13011 ,  H01L2224/13075 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/8114 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81234 ,  H01L2224/81238 ,  H01L2224/81385 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/00

摘要： A method of forming a hybridized device including forming a first component provided with metal bumps, and a second component provided with connection elements, attaching the bumps to the connection elements. The manufacturing of the second component includes forming, on a surface of a substrate, resistive elements at the locations provided for the connection elements; depositing an electric insulator layer at least on the resistive elements; and forming the connection elements, each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper. Further, the attachment of the balls to the connection elements comprises applying an electric current through the resistive elements to heat the bumps.

摘要翻译： 一种形成杂化装置的方法，包括形成设置有金属凸块的第一部件，以及设置有连接元件的第二部件，将凸块连接到连接元件。 第二部件的制造包括在基板的表面上在为连接元件提供的位置处形成电阻元件; 至少在所述电阻元件上沉积电绝缘体层; 并且形成连接元件，每个连接元件包括具有开口的金属孔，该开口能够接收第一微电子元件的相应的金属凸块，并且至少部分地填充有可熔元件，特别是铟或锡和金的合金，或与导电 油墨，特别是基于银或铜。 此外，将球附接到连接元件包括施加电流通过电阻元件以加热凸块。

公开(公告)号：US07279409B2

公开(公告)日：2007-10-09

申请号：US11263440

申请日：2005-10-31

申请人： Hei Ming Shiu ,  On Lok Chau ,  Gor Amie Lai

发明人： Hei Ming Shiu ,  On Lok Chau ,  Gor Amie Lai

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L24/12 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/0381 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/114 ,  H01L2224/11552 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H05K3/3484 ,  H05K3/3494 ,  H05K2201/10992 ,  H05K2203/0425 ,  H05K2203/043 ,  H05K2203/0557 ,  H05K2203/107 ,  H05K2203/1476 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A method for forming multi-layer bumps on a substrate includes depositing a first metal powder on the substrate, and selectively melting or reflowing a portion of the first metal powder to form first bumps. A second metal powder is then deposited on the first bumps, and melted to form second bumps on the first bumps. A masking plate is disposed over the substrate to select the portions of the metal powders that are melted and the metal powders are melted via an irradiation beam. The multi-layer bump is formed without the need for any wet chemicals.

摘要翻译： 在基板上形成多层凸块的方法包括在基板上沉积第一金属粉末，并选择性地熔化或回流第一金属粉末的一部分以形成第一凸块。 然后将第二金属粉末沉积在第一凸起上，并熔化以在第一凸块上形成第二凸起。 掩模板设置在基板上，以选择熔化的金属粉末的部分，并且金属粉末经由照射光束熔化。 形成多层凸块，而不需要任何湿化学品。

公开(公告)号：US20070099413A1

公开(公告)日：2007-05-03

申请号：US11263440

申请日：2005-10-31

申请人： Hei Shiu ,  On Chau ,  Gor Lai

发明人： Hei Shiu ,  On Chau ,  Gor Lai

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/0381 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/114 ,  H01L2224/11552 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H05K3/3484 ,  H05K3/3494 ,  H05K2201/10992 ,  H05K2203/0425 ,  H05K2203/043 ,  H05K2203/0557 ,  H05K2203/107 ,  H05K2203/1476 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A method for forming multi-layer bumps on a substrate includes depositing a first metal powder on the substrate, and selectively melting or reflowing a portion of the first metal powder to form first bumps. A second metal powder is then deposited on the first bumps, and melted to form second bumps on the first bumps. A masking plate is disposed over the substrate to select the portions of the metal powders that are melted and the metal powders are melted via an irradiation beam. The multi-layer bump is formed without the need for any wet chemicals.

公开(公告)号：US20020064930A1

公开(公告)日：2002-05-30

申请号：US09902151

申请日：2001-07-10

发明人： Natsuya Ishikawa

IPC分类号： H01L021/44

CPC分类号： H01L21/563 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11552 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014

摘要： Providing a method for forming a solder bump and a process for fabricating a semiconductor device, which can form an optimum solder bump for IC chips at a low cost. An opening portion is formed in an inexpensive photoresist having a low heat resistance formed on a wafer, and only a solder paste filling the opening portion is partly heated by a laser beam to form a solder bump. Thus, there can be provided a method for forming a solder bump, which is advantageous not only in that the predetermined amount of a solder bump can be formed in the opening portion formed with a high accuracy without dispersion, but also in that the cost can be lowered because of the use of an inexpensive photoresist.

摘要翻译： 提供一种用于形成焊料凸块的方法和用于制造半导体器件的工艺，其可以以低成本形成用于IC芯片的最佳焊料凸块。 在晶片上形成的具有低耐热性的便宜的光致抗蚀剂形成开口部分，并且只有填充开口部分的焊膏部分地被激光束加热以形成焊料凸块。 因此，可以提供形成焊料凸块的方法，这不仅有利于在没有分散的情况下以高精度形成的开口部分中形成预定量的焊料凸块，而且成本也可以 由于使用廉价的光致抗蚀剂而被降低。

公开(公告)号：US5767569A

公开(公告)日：1998-06-16

申请号：US584293

申请日：1996-01-11

申请人： Yukio Ohta ,  Kei Goto ,  Yoshihiro Notani ,  Yasuharu Nakajima ,  Akira Inoue ,  Hiroto Matubayashi

发明人： Yukio Ohta ,  Kei Goto ,  Yoshihiro Notani ,  Yasuharu Nakajima ,  Akira Inoue ,  Hiroto Matubayashi

IPC分类号： H01L21/60 ,  H01L21/603 ,  H01L23/485 ,  H01L23/495 ,  H01L23/50 ,  H01L23/34 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L23/49572 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/50 ,  H01L24/83 ,  H01L2224/11552 ,  H01L2224/13099 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/19042 ,  H01L2924/19043

摘要： The method for mounting a semiconductor chip comprises disposing conductive thermoplastic polyimide as a bonding material between an inner lead of the TAB tape and an external connecting electrode of the semiconductor chip, applying pressure to the conductive thermoplastic polyimide by a wedge with heating by a hot stage via the semiconductor chip. The semiconductor chip comprises the external connecting electrode adhered the conductive thermoplastic polyimide. The method for fabricating the semiconductor chip comprises forming a signal line and a protective film, forming an electrode pad on the signal line not provided the protective film, forming a conductive thermoplastic polyimide layer on the semiconductor wafer by spin coating, forming a resist on the conductive thermoplastic polyimide layer and performing an etching with using the resist as a mask. The inner lead of the TAB tape is made of conductive thermoplastic polyimide, not gilded. The flip-chip mounting substrate comprises a semiconductor chip connecting electrode comprising a signal line made of conductive thermoplastic polyimide, a protective film protecting the signal line, and adhering conductive thermoplastic polyimide on the signal line not providing the protective film. The microwave device comprises mounting the semiconductor chip in the inner lead of the TAB tape by adhering the external connecting electrode of the semiconductor chip to the inner lead of the TAB tape. Therefore, it is not required using high cost material for mounting the semiconductor chip, so that reducing in cost is accomplished.

摘要翻译： 用于安装半导体芯片的方法包括将导电热塑性聚酰亚胺作为接合材料布置在TAB带的内引线和半导体芯片的外部连接电极之间，通过加热阶段通过楔形件向导电热塑性聚酰亚胺施加压力 通过半导体芯片。 半导体芯片包括附着有导电性热塑性聚酰亚胺的外部连接电极。 制造半导体芯片的方法包括形成信号线和保护膜，在未设置保护膜的信号线上形成电极焊盘，通过旋涂在半导体晶片上形成导电性热塑性聚酰亚胺层，在其上形成抗蚀剂 导电热塑性聚酰亚胺层，并使用抗蚀剂作为掩模进行蚀刻。 TAB带的内引线由导电热塑性聚酰亚胺制成，不镀金。 倒装芯片安装基板包括半导体芯片连接电极，其包括由导电热塑性聚酰亚胺制成的信号线，保护信号线的保护膜，以及在不提供保护膜的信号线上粘附导电热塑性聚酰亚胺。 微波装置包括通过将半导体芯片的外部连接电极粘附到TAB带的内引线上来将半导体芯片安装在TAB带的内引线中。 因此，不需要使用高成本材料来安装半导体芯片，从而实现成本的降低。

公开(公告)号：US20190244926A1

公开(公告)日：2019-08-08

申请号：US16388113

申请日：2019-04-18

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Richard S. Graf ,  Jay F. Leonard ,  David J. West ,  Charles H. Wilson

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/17 ,  H01L21/563 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/11332 ,  H01L2224/11442 ,  H01L2224/11505 ,  H01L2224/11552 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/14135 ,  H01L2224/14155 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/17104 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81986 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2924/20645 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Sintered connection structures and methods of manufacture are disclosed. The method includes placing a powder on a substrate and sintering the powder to form a plurality of pillars. The method further includes repeating the placing and sintering steps until the plurality of pillars reach a predetermined height. The method further includes forming a solder cap on the plurality of pillars. The method further includes joining the substrate to a board using the solder cap.