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    Semiconductor package and method for forming the same
    2.
    发明申请
    Semiconductor package and method for forming the same 有权
    半导体封装及其形成方法

    公开(公告)号：US20060270194A1

    公开(公告)日：2006-11-30

    申请号：US11140351

    申请日：2005-05-26

    申请人： Vasile Thompson ,  Jason Fender ,  Terry Daly ,  Jin-Wook Jang

    发明人： Vasile Thompson ,  Jason Fender ,  Terry Daly ,  Jin-Wook Jang

    IPC分类号： H01L21/00 ,  H01L23/52

    CPC分类号： H01L23/482 ,  H01L23/481 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10158 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15763 ,  H01L2924/01031 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/00

    摘要： Semiconductor packages (100) that prevent the leaching of gold from back metal layers (118) into the solder (164) during the die attachment process and methods for fabricating the same are provided. A method in accordance with the invention comprises providing a semiconductor wafer stack (110) including a plurality of metal pads (112). An adhesion/plating layer (115) is formed on a surface (119) of a substrate (116). A layer of gold (118) is plated on a surface of the adhesion/plating layer (115). The layer of gold is etched in a street area (124) using standard photolithography techniques to expose edge portions (128) of the layer of gold (118) and the adhesion/plating layer (115). A layer of barrier metal (130) is deposited to form an edge seal (129) about the exposed edges (128) of the layer of gold (118) the adhesion/plating layer (115). The semiconductor wafer stack (110) is diced in the street area (124) and soldered to a leadframe (162) to form a semiconductor package (100) that provides for an edge seal (128) to prevent the leaching of gold from back metal layers (118) into the solder (162).

    摘要翻译： 提供了防止在模具附接过程期间将金从后金属层（118）浸入焊料（164）中的半导体封装（100）及其制造方法。 根据本发明的方法包括提供包括多个金属焊盘（112）的半导体晶片堆叠（110）。 在基板（116）的表面（119）上形成粘合/镀层（115）。 将金层（118）镀在粘合/镀层（115）的表面上。 使用标准光刻技术在街道区域（124）中蚀刻金层，以暴露金层（118）和粘附/镀层（115）的边缘部分（128）。 沉积一层阻挡金属（130），以形成围绕粘合/镀层（115）的金层（118）的暴露边缘（128）的边缘密封（129）。 半导体晶片堆叠（110）在街道区域（124）中切割并焊接到引线框架（162）以形成提供边缘密封（128）以防止金从背面金属浸出的半导体封装（100） 层（118）进入焊料（162）。

    METHODS AND DEVICES FOR BRAIN COOLING FOR TREATMENT AND/OR PREVENTION OF EPILEPTIC SEIZURES
    3.
    发明申请
    METHODS AND DEVICES FOR BRAIN COOLING FOR TREATMENT AND/OR PREVENTION OF EPILEPTIC SEIZURES 有权
    用于治疗和/或预防癫痫发作的脑冷却的方法和装置

    公开(公告)号：US20120290052A1

    公开(公告)日：2012-11-15

    申请号：US13482903

    申请日：2012-05-29

    申请人： Raimondo D'Ambrosio ,  Jason Fender ,  Jeffrey Ojemann ,  John W. Miller

    发明人： Raimondo D'Ambrosio ,  Jason Fender ,  Jeffrey Ojemann ,  John W. Miller

    IPC分类号： A61F7/12 ,  B82Y5/00

    CPC分类号： A61F7/12 ,  A61F7/10 ,  A61F2007/0002 ,  A61F2007/0096 ,  A61F2007/0247 ,  A61F2007/108 ,  A61F2007/126

    摘要： Passive prosthetic devices for focally cooling a brain and methods for inhibiting seizures are disclosed. The prosthetic devices replace a thermally insulating bone flap with a thermally conductive insert having an inner surface that contacts the relatively warm meninges or brain and an outer surface that contacts the relatively cool scalp. In an embodiment, the prosthesis is unitary; in another, a biocompatible casing is filled with a highly conductive core; in another, a filled polymer block is attached to a plate; and in another, the bone flap is filled with a conductive polymer. In one embodiment, a filled polymer containing elements that exhibit the magnetocaloric effect provide heat transfer that can be enhanced by application of a suitable magnetic field. Focal cooling as low as 1.2° C. has been found effective at inhibiting seizures.

    摘要翻译： 公开了用于灶脑冷却的被动修复装置和抑制癫痫发作的方法。 假体装置用具有接触相对温暖的脑膜或脑的内表面的导热插入物和接触相对较冷的头皮的外表面替换绝热骨瓣。 在一个实施例中，假体是一体的; 在另一个中，生物相容性壳体填充有高度导电的芯; 另一方面，将填充的聚合物嵌段连接到板上; 另一方面，骨折片填充有导电聚合物。 在一个实施方案中，含有表现出磁热效应的元素的填充聚合物提供可以通过施加合适的磁场而增强的热传递。 发现低至1.2℃的局部冷却有效抑制癫痫发作。

    Methods and devices for brain cooling for treatment and prevention of acquired epilepsy
    4.
    发明授权
    Methods and devices for brain cooling for treatment and prevention of acquired epilepsy 有权
    用于治疗和预防获得性癫痫的脑冷却的方法和装置

    公开(公告)号：US08591562B2

    公开(公告)日：2013-11-26

    申请号：US12629863

    申请日：2009-12-02

    申请人： Raimondo D'Ambrosio ,  Matthew Smyth ,  Steven Mark Rothman ,  John W. Miller ,  Jason Fender

    发明人： Raimondo D'Ambrosio ,  Matthew Smyth ,  Steven Mark Rothman ,  John W. Miller ,  Jason Fender

    IPC分类号： A61F7/12

    CPC分类号： A61F7/12 ,  A61F2007/0002 ,  A61F2007/0096 ,  A61F2007/0247

    摘要： A device for cooling the central nervous system (e.g., the brain) is disclosed that is specifically designed to provide cooling of an injured central nervous system for neuroprotective, antiepileptogenic, and/or antiepileptic treatments. In one embodiment, a portion of the cooling device is placed in a recess formed by removal of a portion of a patient's skull. An embedded heat-collecting portion of the cooling device is formed to fit in the location of the formed recess and a thermally conductive material of the heat-collecting portion is placed adjacent the dura mater to provide the desired degree of cooling. A heat-dissipating external plate is in thermal contact with the internal plate, and can be selectively sized according to a specific purpose.

    摘要翻译： 公开了一种用于冷却中枢神经系统（例如脑）的装置，其特别设计为提供用于神经保护，抗癫痫发生和/或抗癫痫治疗的受损中枢神经系统的冷却。 在一个实施例中，冷却装置的一部分被放置在通过去除患者头骨的一部分而形成的凹部中。 冷却装置的嵌入式集热部形成为配合在所形成的凹部的位置，并且集热部的导热材料配置在硬膜附近，以提供所需的冷却程度。 散热外板与内板热接触，可根据具体目的选择尺寸。

    Methods and devices for brain cooling for treatment and/or prevention of epileptic seizures
    5.
    发明授权
    Methods and devices for brain cooling for treatment and/or prevention of epileptic seizures 有权
    用于脑冷却治疗和/或预防癫痫发作的方法和装置

    公开(公告)号：US09522081B2

    公开(公告)日：2016-12-20

    申请号：US13482903

    申请日：2012-05-29

    申请人： Raimondo D'Ambrosio ,  Jason Fender ,  Jeffrey Ojemann ,  John W. Miller ,  Matthew Smyth ,  Steven M. Rothman

    发明人： Raimondo D'Ambrosio ,  Jason Fender ,  Jeffrey Ojemann ,  John W. Miller ,  Matthew Smyth ,  Steven M. Rothman

    IPC分类号： A61F7/12 ,  A61F7/00 ,  A61F7/02

    CPC分类号： A61F7/12 ,  A61F7/10 ,  A61F2007/0002 ,  A61F2007/0096 ,  A61F2007/0247 ,  A61F2007/108 ,  A61F2007/126

    摘要： Passive prosthetic devices for focally cooling a brain and methods for inhibiting seizures are disclosed. The prosthetic devices replace a thermally insulating bone flap with a thermally conductive insert having an inner surface that contacts the relatively warm meninges or brain and an outer surface that contacts the relatively cool scalp. In an embodiment, the prosthesis is unitary; in another, a biocompatible casing is filled with a highly conductive core; in another, a filled polymer block is attached to a plate; and in another, the bone flap is filled with a conductive polymer. In one embodiment, a filled polymer containing elements that exhibit the magnetocaloric effect provide heat transfer that can be enhanced by application of a suitable magnetic field. Focal cooling as low as 1.2° C. has been found effective at inhibiting seizures.

    摘要翻译： 公开了用于灶脑冷却的被动修复装置和抑制癫痫发作的方法。 假体装置用具有接触相对温暖的脑膜或脑的内表面的导热插入物和接触相对较冷的头皮的外表面替换绝热骨瓣。 在一个实施例中，假体是一体的; 在另一个中，生物相容性壳体填充有高度导电的芯; 另一方面，将填充的聚合物嵌段连接到板上; 另一方面，骨折片填充有导电聚合物。 在一个实施方案中，含有表现出磁热效应的元素的填充聚合物提供可以通过施加合适的磁场而增强的热传递。 发现低至1.2℃的局部冷却有效抑制癫痫发作。