公开(公告)号：US20080135826A1

公开(公告)日：2008-06-12

申请号：US11819360

申请日：2007-06-27

申请人： Stephen Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kaan Kalkan ,  Joseph D. Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Jun Nam

发明人： Stephen Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kaan Kalkan ,  Joseph D. Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Jun Nam

IPC分类号： H01L29/06

CPC分类号： B81C1/0019 ,  B81B2203/0109 ,  B81B2203/0118 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L51/0002 ,  Y02E10/549 ,  Y10S977/762

摘要： This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures including, for example, nanotubes, nanowires, nanoribbons, and nanotapes, including SiNW, using a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and may be built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed and may become part of the structure. Nanodevices such as nanotweezers, nanocantilevers, and nanobridges are formed utilizing the processes of the invention.

摘要翻译： 本发明提出了一种使用纳米通道模板形成均匀或不均匀的直线或弯曲和尺寸可控的纳米结构的新方法，其包括例如纳米管，纳米线，纳米带和纳米线，包括SiNW。 在半导体纳米线的情况下，可以在生长期间包括掺杂。 根据需要存在电极触点，并且可以内置于模板结构中。 如纳米线或纳米管制造完成时，制造，接触和排列诸如二极管，晶体管，太阳能电池，传感器和换能器的完成器件。 可选地，模板不被移除并且可以成为结构的一部分。 使用本发明的方法形成纳米维持器，纳米悬臂和纳米桥的纳米装置。

公开(公告)号：US07238594B2

公开(公告)日：2007-07-03

申请号：US11008989

申请日：2004-12-13

申请人： Stephen J. Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kaan Kalkan ,  Joseph D. Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Jun Nam

发明人： Stephen J. Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kaan Kalkan ,  Joseph D. Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Jun Nam

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： B81C1/0019 ,  B81B2203/0109 ,  B81B2203/0118 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L51/0002 ,  Y02E10/549 ,  Y10S977/762

摘要： This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures including, for example, nanotubes, nanowires, nanoribbons, and nanotapes, including SiNW, using a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and may be built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed and may become part of the structure. Nanodevices such as nanotweezers, nanocantilevers, and nanobridges are formed utilizing the processes of the invention.

摘要翻译： 本发明提出了一种使用纳米通道模板形成均匀或不均匀的直线或弯曲和尺寸可控的纳米结构的新方法，其包括例如纳米管，纳米线，纳米带和纳米线，包括SiNW。 在半导体纳米线的情况下，可以在生长期间包括掺杂。 根据需要存在电极触点，并且可以内置于模板结构中。 如纳米线或纳米管制造完成时，制造，接触和排列诸如二极管，晶体管，太阳能电池，传感器和换能器的完成器件。 可选地，模板不被移除并且可以成为结构的一部分。 使用本发明的方法形成纳米维持器，纳米悬臂和纳米桥的纳米装置。

公开(公告)号：US20050176228A1

公开(公告)日：2005-08-11

申请号：US11008989

申请日：2004-12-13

申请人： Stephen Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kalkan ,  Joseph Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Nam

发明人： Stephen Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kalkan ,  Joseph Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Nam

IPC分类号： B81C1/00 ,  H01L21/20 ,  H01L21/44 ,  H01L29/06 ,  H01L51/00

CPC分类号： B81C1/0019 ,  B81B2203/0109 ,  B81B2203/0118 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L51/0002 ,  Y02E10/549 ,  Y10S977/762

摘要： This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures, nanowires, and nanotapes, including SiNW, in a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed may become part of the structure. Nanostructures such as nanotweezers, nanocantiliver, and nanobridges are formed utilizing the processes of the invention.

摘要翻译： 本发明提出了一种在纳米通道模板中形成均匀或不均匀的直线或弯曲和尺寸可控的纳米结构，纳米线和纳米线（包括SiNW）的新方法。 在半导体纳米线的情况下，可以在生长期间包括掺杂。 根据需要存在电极触点，并内置于模板结构中。 如纳米线或纳米管制造完成时，制造，接触和排列诸如二极管，晶体管，太阳能电池，传感器和换能器的完成器件。 可选地，模板不被移除可能会成为结构的一部分。 使用本发明的方法形成纳米结构，如纳米滴定剂，纳坦溶剂和纳米桥。

公开(公告)号：US20140060635A1

公开(公告)日：2014-03-06

申请号：US13601162

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L31/0232

CPC分类号： H01L31/02963 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543

摘要： Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

摘要翻译： 介绍了光伏器件。 光电器件包括窗口层和包括设置在窗口层上的半导体材料的半导体层。 所述半导体层包括第一区域和第二区域，所述第一区域设置在所述窗口层附近，所述第二区域包括富硫族元素区域，其中所述第一区域和所述第二区域包括掺杂剂，并且平均原子浓度 在第二区域中的掺杂剂的平均原子浓度大于第一区域中的掺杂剂的平均原子浓度。

公开(公告)号：US20080251862A1

公开(公告)日：2008-10-16

申请号：US12102398

申请日：2008-04-14

申请人： Stephen J. Fonash ,  Yinghui Shan ,  S. Ashok

发明人： Stephen J. Fonash ,  Yinghui Shan ,  S. Ashok

IPC分类号： H01L29/00 ,  H01L21/336

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

摘要： A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.

摘要翻译： 提供了门控微电子器件，其具有源极与源极源极接触的源极，源极的源极掺杂剂类型和浓度为特征。 具有与漏极欧姆接触的漏极，其特征在于漏极掺杂剂类型和浓度。 中间通道部分，其特征在于通道部分掺杂剂型和浓度。 绝缘电介质与通道部分接触并依次由栅极覆盖。 栅极接触器施加栅极电压偏置以控制底层通道部分中的载流子累积和耗尽。 该通道部分具有​​垂直于关断状态完全耗尽的栅极的尺寸。 掺杂剂类型在器件的源极，漏极和沟道部分上是相同的。 器件导通电流由掺杂决定，与MOSFET不同，器件电容不成正比。

公开(公告)号：US09276157B2

公开(公告)日：2016-03-01

申请号：US13601110

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L21/00 ,  H01L31/073 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0392

CPC分类号： H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

摘要翻译： 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。

公开(公告)号：US20140065763A1

公开(公告)日：2014-03-06

申请号：US13601110

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L31/18

CPC分类号： H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

摘要翻译： 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。

公开(公告)号：US08569834B2

公开(公告)日：2013-10-29

申请号：US12102398

申请日：2008-04-14

申请人： Stephen J. Fonash ,  Yinghui Shan ,  Somasundaram Ashok

发明人： Stephen J. Fonash ,  Yinghui Shan ,  Somasundaram Ashok

IPC分类号： H01L29/786

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

摘要： A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.

公开(公告)号：US09231134B2

公开(公告)日：2016-01-05

申请号：US13601162

申请日：2012-08-31

申请人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

发明人： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC分类号： H01L31/042 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/073

CPC分类号： H01L31/02963 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543

摘要： Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

摘要翻译： 介绍了光伏器件。 光电器件包括窗口层和包括设置在窗口层上的半导体材料的半导体层。 所述半导体层包括第一区域和第二区域，所述第一区域设置在所述窗口层附近，所述第二区域包括富硫族元素区域，其中所述第一区域和所述第二区域包括掺杂剂，并且平均原子浓度 在第二区域中的掺杂剂的平均原子浓度大于第一区域中的掺杂剂的平均原子浓度。