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公开(公告)号:US20100200775A1
公开(公告)日:2010-08-12
申请号:US12370571
申请日:2009-02-12
申请人: Wei-Cheng Lin , Nai-Yuan Cheng
发明人: Wei-Cheng Lin , Nai-Yuan Cheng
IPC分类号: H01J37/08
CPC分类号: H01J37/3171 , H01J37/05 , H01J37/244 , H01J37/304 , H01J2237/24507 , H01J2237/30472
摘要: Deflections from a desired trajectory of an ion beam outputted from an analyzer magnet are corrected with real-time monitoring of the ion beam deflection. Conductive structures are located close to the boundary of the beam exit, where each conductive structure is electrically insulated from other conductive structures and the analyzer magnet. Then, during implantation of ions into a wafer, continuous measuring of any current appearing on each conductive structure occurs, such that any collision between the conductive structure(s) and the ion beam is real-time monitored. By properly adjusting the shape/location/number of the conductive structure(s), and by properly adjusting the relative geometric relation among the conductive structure(s) and the desired trajectory, both the deflected angle and the deflected direction can be real-time monitored. Hence, the on-going implantation process and the implanter can be adjusted/maintained.
摘要翻译: 通过对离子束偏转的实时监测来校正从分析器磁体输出的离子束的期望轨迹的偏转。 导电结构位于梁出口的边界附近,其中每个导电结构与其他导电结构和分析器磁体电绝缘。 然后,在将离子注入晶片期间,出现在每个导电结构上出现的任何电流的连续测量,使得导电结构和离子束之间的任何碰撞被实时监测。 通过适当地调整导电结构的形状/位置/数量,并且通过适当地调整导电结构和所需轨迹之间的相对几何关系,偏转角和偏转方向都可以是实时的 监控。 因此,可以调整/维持正在进行的植入过程和注入机。
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公开(公告)号:US5863334A
公开(公告)日:1999-01-26
申请号:US882134
申请日:1997-06-25
申请人: Chu-An Chou , Ching-Shou Lee , Nai-Yuan Cheng
发明人: Chu-An Chou , Ching-Shou Lee , Nai-Yuan Cheng
IPC分类号: C03B20/00 , C30B31/14 , H01L21/22 , H01L21/673 , H01L21/683 , C23C16/00
CPC分类号: H01L21/67313 , C30B31/14
摘要: A strength-enhanced quartz boat is provided to enhance the strength at connections between the quartz plates and quartz rods of the quartz boat. The strength-enhanced quartz boat includes a front quartz plate, a rear quartz plate, a first pair of quartz rods, a second pair of quartz rods and four reinforcement bars. The first pair of quartz rods are disposed longitudinally to connect the front quartz plate and rear quartz plate at an upper location respectively. The second pair of quartz rods are disposed longitudinally to connect, via first engagement connections, the front quartz plate and rear quartz plate at a lower location respectively. Each reinforcement bar is disposed longitudinally to connect, via a second engagement connection, to one corresponding front quartz plate or rear quartz plate at a location below one corresponding rod of the lower pair of quartz rods. A welding operation is performed on the first engagement connections and the second engagement connections respectively. The welding operation is further performed on a junction between each reinforcement bar and one corresponding rod of the second pair of quartz rods.
摘要翻译: 提供强度增强的石英舟,以提高石英舟石英板和石英棒之间连接处的强度。 强度增强的石英舟包括前石英板,后石英板,第一对石英棒,第二对石英棒和四根钢筋。 第一对石英棒纵向设置以分别在上部位置连接前石英板和后石英板。 第二对石英棒纵向设置,通过第一接合连接分别在较低位置连接前石英板和后石英板。 每个加强筋纵向设置,以通过第二接合连接件在下一对石英棒的一个对应的杆下方的位置处连接到一个对应的前石英板或后石英板。 在第一接合连接和第二接合连接上分别执行焊接操作。 焊接操作进一步在每个钢筋与第二对石英棒的一个对应杆之间的连接处进行。
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公开(公告)号:US07687784B2
公开(公告)日:2010-03-30
申请号:US12126312
申请日:2008-05-23
申请人: Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
发明人: Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
CPC分类号: H01J37/08 , H01J27/02 , H01J37/3171 , H01J2237/002 , H01J2237/08 , H01J2237/24585
摘要: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
摘要翻译: 注入机配备有离子束电流检测器,温度传感器,温度控制器和冷却系统,以增加注入机的离子源室中的特定离子簇的比例。 因此,浅离子注入的植入效率因此增加。
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公开(公告)号:US20090194704A1
公开(公告)日:2009-08-06
申请号:US12126312
申请日:2008-05-23
申请人: Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
发明人: Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
IPC分类号: H01J27/02
CPC分类号: H01J37/08 , H01J27/02 , H01J37/3171 , H01J2237/002 , H01J2237/08 , H01J2237/24585
摘要: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
摘要翻译: 注入机配备有离子束电流检测器,温度传感器,温度控制器和冷却系统,以增加注入机的离子源室中的特定离子簇的比例。 因此,浅离子注入的植入效率因此增加。
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