Method for batch cleaving semiconductor wafers and coating cleaved facets
    1.
    发明授权
    Method for batch cleaving semiconductor wafers and coating cleaved facets 失效
    分批切割半导体晶片和涂层切割面的方法

    公开(公告)号:US5171717A

    公开(公告)日:1992-12-15

    申请号:US647861

    申请日:1991-01-30

    摘要: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer, provided with scribe lines defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands and guiding it around a curved, large radius surface thereby applying a bending moment. With a moment of sufficient magnitude, individual bars are broken off the wafer as this is advanced, the bars having front-and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighboring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

    摘要翻译: 一种用于切割半导体晶片或其部分的方法,其包括将设置有限定要进行裂开的平面的切割线的晶片放置在一对柔性传输带之间并将其引导到弯曲的大半径表面上,从而施加 一个弯曲的时刻。 有了足够的时刻,随着这个进步,单个的条被从晶片上分离出来,这些条具有前端和后端方面。 在切割时,每个杆在仍然压靠弯曲表面的同时被自动分离,从而防止相邻杆的小面的相互损坏。 为了进一步处理,例如 为了将棒运送到用于钝化层沉积的蒸发站,进行了保持棒分离的规定。 切割和随后的钝化涂层可以在真空系统中原位进行,以防止在施加钝化之前的小面污染。