Acoustic wave bandpass filter comprising integrated acoustic guiding
    1.
    发明授权
    Acoustic wave bandpass filter comprising integrated acoustic guiding 有权
    声波带通滤波器,包括集成声导

    公开(公告)号:US09450563B2

    公开(公告)日:2016-09-20

    申请号:US13879598

    申请日:2011-10-11

    摘要: An acoustic wave bandpass filter comprises at least an input first acoustic wave resonator with an output surface, and an output second acoustic wave resonator with an input surface, said resonators being coupled to each other along a set direction, the input and output surfaces being substantially opposite, and at least one first phononic crystal structure between said input and output resonators and/or a second phonic crystal structure at the periphery of said resonators so as to guide the acoustic waves, generated by said input resonator, toward said output resonator along said set direction, the resonators ensuring an impedance conversion and/or a mode conversion.

    摘要翻译: 声波带通滤波器至少包括具有输出表面的输入第一声波谐振器和具有输入表面的输出第二声波谐振器,所述谐振器沿着设定方向彼此耦合,所述输入和输出表面基本上 所述输入和输出谐振器之间的至少一个第一声子晶体结构和/或所述谐振器周围的第二声子晶体结构,以便将由所述输入谐振器产生的声波沿着所述输入谐振器 设定方向,谐振器确保阻抗转换和/或模式转换。

    LATERALLY COUPLED BAW FILTER EMPLOYING PHONONIC CRYSTALS
    2.
    发明申请
    LATERALLY COUPLED BAW FILTER EMPLOYING PHONONIC CRYSTALS 有权
    使用PHONONY CRYSTALS的侧向耦合过滤器

    公开(公告)号:US20130214879A1

    公开(公告)日:2013-08-22

    申请号:US13879406

    申请日:2011-10-10

    IPC分类号: H03H9/56

    摘要: An acoustic wave bandpass filter comprises at least two bulk acoustic wave resonators, laterally coupled to each other acoustically, each resonator including a film of piezoelectric material and at least a first electrode and/or a second electrode, said bulk waves propagating in a direction perpendicular to the plane of the film of piezoelectric material, characterized in that: it further comprises at least a first phononic crystal structure between said resonators such that the transmission coefficient of the lateral acoustic waves can be decreased in a direction parallel to the plane of the piezoelectric film; and the first phononic crystal structure is formed in a matrix of dielectric material or with patterns made from dielectric material.

    摘要翻译: 声波带通滤波器包括至少两个在声学上彼此横向耦合的体声波谐振器,每个谐振器包括压电材料薄膜和至少第一电极和/或第二电极,所述体波在垂直方向上传播 到压电材料薄膜的平面,其特征在于:它还包括在所述谐振器之间的至少第一声子晶体结构,使得横向声波的透射系数可以在平行于压电体的平面的方向上减小 电影; 并且第一声子晶体结构形成在电介质材料的基体中或由介电材料制成的图案。

    Laterally coupled BAW filter employing phononic crystals
    3.
    发明授权
    Laterally coupled BAW filter employing phononic crystals 有权
    使用声子晶体的横向耦合的BAW滤波器

    公开(公告)号:US09325293B2

    公开(公告)日:2016-04-26

    申请号:US13879406

    申请日:2011-10-10

    IPC分类号: H03H9/56 H03H9/02

    摘要: An acoustic wave bandpass filter comprises at least two bulk acoustic wave resonators, laterally coupled to each other acoustically, each resonator including a film of piezoelectric material and at least a first electrode and/or a second electrode, said bulk waves propagating in a direction perpendicular to the plane of the film of piezoelectric material, characterized in that: it further comprises at least a first phononic crystal structure between said resonators such that the transmission coefficient of the lateral acoustic waves can be decreased in a direction parallel to the plane of the piezoelectric film; and the first phononic crystal structure is formed in a matrix of dielectric material or with patterns made from dielectric material.

    摘要翻译: 声波带通滤波器包括至少两个在声学上彼此横向耦合的体声波谐振器,每个谐振器包括压电材料薄膜和至少第一电极和/或第二电极,所述体波在垂直方向上传播 到压电材料薄膜的平面,其特征在于:它还包括在所述谐振器之间的至少第一声子晶体结构,使得横向声波的透射系数可以在平行于压电体的平面的方向上减小 电影; 并且第一声子晶体结构形成在电介质材料的基体中或由介电材料制成的图案。

    Process for Producing an Acoustic Device Having a Controlled-Bandgap Phononic Crystal Structure Containing Conical Inclusions
    4.
    发明申请
    Process for Producing an Acoustic Device Having a Controlled-Bandgap Phononic Crystal Structure Containing Conical Inclusions 有权
    具有包含锥形夹杂物的受控带隙声子晶体结构的声学装置的制造方法

    公开(公告)号:US20120204415A1

    公开(公告)日:2012-08-16

    申请号:US13371192

    申请日:2012-02-10

    IPC分类号: H04R31/00

    摘要: A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.

    摘要翻译: 一种用于制造具有声子晶体结构的声学装置的方法,包括:在分布在第二介质的矩阵中的第一介质中产生的夹杂物,以阻挡声带在带隙频带内的传播,包括:限定所述夹杂物的几何参数, 具有与所述基体接触的至少一个非零第一壁角,与所述结构的平面的法线接触,所述几何参数包括所述第一壁角; 确定与所述带隙的频率位置的变化相关的功能,或者与所述带隙的宽度的变化相关的所述壁角; 根据预先确定的功能或功能确定所选择的频率位置和/或带隙的选定宽度的至少第一角度; 并且在由所述第二介质形成的所述基体中产生至少具有所述第一壁角的所述夹杂物。

    Process for producing an acoustic device having a controlled-bandgap phononic crystal structure
    5.
    发明授权
    Process for producing an acoustic device having a controlled-bandgap phononic crystal structure 有权
    具有受控带隙声子晶体结构的声学装置的制造方法

    公开(公告)号:US08819904B2

    公开(公告)日:2014-09-02

    申请号:US13371192

    申请日:2012-02-10

    IPC分类号: H01L41/22

    摘要: A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.

    摘要翻译: 一种用于制造具有声子晶体结构的声学装置的方法,包括:在分布在第二介质的矩阵中的第一介质中产生的夹杂物,以阻挡声带在带隙频带内的传播,包括:限定所述夹杂物的几何参数, 具有与所述基体接触的至少一个非零第一壁角,与所述结构的平面的法线接触,所述几何参数包括所述第一壁角; 确定与所述带隙的频率位置的变化相关的功能,或者与所述带隙的宽度的变化相关的所述壁角; 根据预先确定的功能或功能确定所选择的频率位置和/或带隙的选定宽度的至少第一角度; 并且在由所述第二介质形成的所述基体中产生至少具有所述第一壁角的所述夹杂物。

    Acoustic Wave Bandpass Filter Comprising Integrated Acoustic Guiding
    6.
    发明申请
    Acoustic Wave Bandpass Filter Comprising Integrated Acoustic Guiding 有权
    声波带通滤波器包括综合声导引

    公开(公告)号:US20130214878A1

    公开(公告)日:2013-08-22

    申请号:US13879598

    申请日:2011-10-11

    IPC分类号: H03H9/54 H03H9/64

    摘要: An acoustic wave bandpass filter comprises at least an input first acoustic wave resonator with an output surface, and an output second acoustic wave resonator with an input surface, said resonators being coupled to each other along a set direction, the input and output surfaces being substantially opposite, and at least one first phononic crystal structure between said input and output resonators and/or a second phonic crystal structure at the periphery of said resonators so as to guide the acoustic waves, generated by said input resonator, toward said output resonator along said set direction, the resonators ensuring an impedance conversion and/or a mode conversion.

    摘要翻译: 声波带通滤波器至少包括具有输出表面的输入第一声波谐振器和具有输入表面的输出第二声波谐振器,所述谐振器沿着设定方向彼此耦合,所述输入和输出表面基本上 所述输入和输出谐振器之间的至少一个第一声子晶体结构和/或所述谐振器周围的第二声子晶体结构,以便将由所述输入谐振器产生的声波沿着所述输入谐振器 设定方向,谐振器确保阻抗转换和/或模式转换。