公开(公告)号：US07199429B2

公开(公告)日：2007-04-03

申请号：US11100163

申请日：2005-04-06

申请人： Douglas M. Reber ,  Mark D. Hall ,  Kurt H. Junker ,  Kyle W. Patterson ,  Tab Allen Stephens ,  Edward K. Theiss ,  Srikanteswara Dakshiina-Murthy ,  Marilyn Irene Wright

发明人： Douglas M. Reber ,  Mark D. Hall ,  Kurt H. Junker ,  Kyle W. Patterson ,  Tab Allen Stephens ,  Edward K. Theiss ,  Srikanteswara Dakshiina-Murthy ,  Marilyn Irene Wright

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/31612 ,  H01L21/32139 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S438/902 ,  Y10S438/952

摘要： In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.

摘要翻译： 在制造半导体器件中，待蚀刻的导电材料上方的图案化叠层具有图案化的光致抗蚀剂层，其用于对四乙基原硅酸盐（TEOS）层进行图案化。 在比常规温度低的温度下沉积TEOS层。 低温TEOS层位于导电层上方的有机抗反射涂层（ARC）上。 低温TEOS层提供有机ARC和光致抗蚀剂之间的粘附，具有低缺陷性，作为硬掩模操作，并且用作与有机ARC组合有助于减少不期望的反射的相移层。

公开(公告)号：US08039389B2

公开(公告)日：2011-10-18

申请号：US11676100

申请日：2007-02-16

申请人： Douglas M. Reber ,  Mark D. Hall ,  Kurt H. Junker ,  Kyle W. Patterson ,  Tab Allen Stephens ,  Edward K. Theiss ,  Srikanteswara Dakshiina-Murthy ,  Marilyn Irene Wright

发明人： Douglas M. Reber ,  Mark D. Hall ,  Kurt H. Junker ,  Kyle W. Patterson ,  Tab Allen Stephens ,  Edward K. Theiss ,  Srikanteswara Dakshiina-Murthy ,  Marilyn Irene Wright

IPC分类号： H01L21/4763

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/31612 ,  H01L21/32139 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S438/902 ,  Y10S438/952

摘要： In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.

摘要翻译： 在制造半导体器件中，待蚀刻的导电材料上方的图案化叠层具有图案化的光致抗蚀剂层，其用于对四乙基原硅酸盐（TEOS）层进行图案化。 在比常规温度低的温度下沉积TEOS层。 低温TEOS层位于导电层上方的有机抗反射涂层（ARC）上。 低温TEOS层提供有机ARC和光致抗蚀剂之间的粘附，具有低缺陷性，作为硬掩模操作，并且用作与有机ARC组合有助于减少不期望的反射的相移层。

公开(公告)号：US06972255B2

公开(公告)日：2005-12-06

申请号：US10628668

申请日：2003-07-28

申请人： Douglas M. Reber ,  Mark D. Hall ,  Kurt H. Junker ,  Kyle W. Patterson ,  Tab Allen Stephens ,  Edward K. Theiss ,  Srikanteswara Dakshiina-Murthy ,  Marilyn Irene Wright

发明人： Douglas M. Reber ,  Mark D. Hall ,  Kurt H. Junker ,  Kyle W. Patterson ,  Tab Allen Stephens ,  Edward K. Theiss ,  Srikanteswara Dakshiina-Murthy ,  Marilyn Irene Wright

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/44

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/31612 ,  H01L21/32139 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S438/902 ,  Y10S438/952

摘要： In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.

摘要翻译： 在制造半导体器件中，待蚀刻的导电材料上方的图案化叠层具有图案化的光致抗蚀剂层，其用于对四乙基原硅酸盐（TEOS）层进行图案化。 在比常规温度低的温度下沉积TEOS层。 低温TEOS层位于导电层上方的有机抗反射涂层（ARC）上。 低温TEOS层提供有机ARC和光致抗蚀剂之间的粘附，具有低缺陷性，作为硬掩模操作，并且用作与有机ARC组合有助于减少不期望的反射的相移层。