公开(公告)号：US20050263780A1

公开(公告)日：2005-12-01

申请号：US11177670

申请日：2005-07-07

Applicant: David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

Inventor： David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

公开(公告)号：US06768141B2

公开(公告)日：2004-07-27

申请号：US10226771

申请日：2002-08-23

Applicant: Sandeep R. Bahl ,  Nicolas J. Moll ,  Mark Hueschen

Inventor： Sandeep R. Bahl ,  Nicolas J. Moll ,  Mark Hueschen

IPC: H01L31072

CPC classification number: H01L29/7371 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/155

Abstract: A heterojunction bipolar transistor (HBT), including an emitter formed from a first semiconductor material, a base formed from a second semiconductor material, and a grading structure between the emitter and the base is disclosed. The grading structure comprises a semiconductor material containing at least one element not present in the first and second semiconductor materials, where the grading structure has a conduction band energy substantially equal to a conduction band energy of the base at an interface between the base and the grading structure, and where the grading structure has a conduction band energy substantially equal to a conduction band energy of the emitter at an interface between the emitter and the grading structure.

Abstract translation: 公开了一种异质结双极晶体管（HBT），包括由第一半导体材料形成的发射极，由第二半导体材料形成的基极以及发射极和基极之间的分级结构。 分级结构包括半导体材料，其含有不存在于第一和第二半导体材料中的至少一种元素，其中分级结构的导带能量基本上等于基底与基底与界面之间的界面处的导带能量 结构，并且其中分级结构的导带能量基本上等于发射器与分级结构之间的界面处的发射极的导带能量。

公开(公告)号：US06853663B2

公开(公告)日：2005-02-08

申请号：US10026232

申请日：2001-12-21

Applicant: Ghulam Hasnain ,  Richard P. Schneider ,  Scott W. Corzine ,  Mark Hueschen ,  Tetsuya Takeuchi ,  Danny E. Mars

Inventor： Ghulam Hasnain ,  Richard P. Schneider ,  Scott W. Corzine ,  Mark Hueschen ,  Tetsuya Takeuchi ,  Danny E. Mars

IPC: H01S5/10 ,  H01S5/323 ,  H01S5/40 ,  H01S5/00

CPC classification number: H01S5/10 ,  H01S5/32341 ,  H01S5/4037 ,  H01S2301/14

Abstract: An optical semiconductor device having an active layer for generating light via the recombination of holes and electrons therein. The active layer is part of a plurality of semiconductor layers including an n-p junction between an n-type layer and a p-type layer. The active layer has a polarization field therein having a field direction that depends on the orientation of the active layer when the active layer is grown. In the present invention, the polarization field in the active layer has an orientation such that the polarization field is directed from the n-layer to the p-layer.

Abstract translation: 一种光半导体器件，具有通过其中的空穴和电子的复合产生光的有源层。 活性层是包括n型层和p型层之间的n-p结的多个半导体层的一部分。 有源层具有其中当活性层生长时具有取决于有源层的取向的场方向的偏振场。 在本发明中，有源层中的偏振场具有使得极化场从n层指向p层的取向。

公开(公告)号：US20060007076A1

公开(公告)日：2006-01-12

申请号：US11222205

申请日：2005-09-07

Applicant: James Sheats ,  Mark Hueschen ,  Ronald Moon

Inventor： James Sheats ,  Mark Hueschen ,  Ronald Moon

IPC: G09G3/30

CPC classification number: H01L27/3251 ,  H01L27/322 ,  H01L2251/5338

Abstract: A display having a plurality of light emitting pixels. Each pixels includes an isolation transistor, a driving circuit, and an organic light emitting diode (OLED). The driving circuit storing a value that determines the magnitude of the light emitted by that pixels, the driving circuit placing the OLED in a conducting path between the first and second power terminals. The driving circuit is programmed through the isolation transistor. In one embodiment of the present invention, the driving circuit includes a storage capacitor and a driving transistor. The OLEDs are part of an array of OLEDs. The array of OLEDs is constructed on a flexible sheet having first and second surfaces, the flexible sheet being transparent to light of a first wavelength. A transparent first electrode layer is in contact with the first surface. A light emitting layer including an organic polymer is in contact with the first electrode layer. A plurality of second electrodes, one such second electrode corresponding to each of the OLEDs, is in contact with the light emitting layer. Each second electrode has an isolated conducting area. The driving transistor are part of a transistor array having a plurality of connection points disposed on a surface, each connection point corresponding to one of the second electrodes in the array of OLEDs. The connection points are arranged such that each second electrode overlies the corresponding connection point when the array of OLEDs is properly aligned with the transistor array. The connection points are bonded to the corresponding second electrodes by a bonding layer.

Abstract translation: 具有多个发光像素的显示器。 每个像素包括隔离晶体管，驱动电路和有机发光二极管（OLED）。 驱动电路存储确定由该像素发射的光的大小的值，驱动电路将OLED置于第一和第二电源端子之间的导电路径中。 驱动电路通过隔离晶体管编程。 在本发明的一个实施例中，驱动电路包括存储电容器和驱动晶体管。 OLED是OLED阵列的一部分。 OLED阵列构造在具有第一和第二表面的柔性片上，柔性片对第一波长的光是透明的。 透明的第一电极层与第一表面接触。 包含有机聚合物的发光层与第一电极层接触。 多个第二电极，对应于每个OLED的一个这样的第二电极与发光层接触。 每个第二电极具有隔离的导电区域。 驱动晶体管是具有设置在表面上的多个连接点的晶体管阵列的一部分，每个连接点对应于OLED阵列中的第二电极之一。 连接点布置成使得当OLED阵列与晶体管阵列正确对准时，每个第二电极覆盖相应的连接点。 连接点通过接合层与相应的第二电极接合。