公开(公告)号：US20140194277A1

公开(公告)日：2014-07-10

申请号：US14008965

申请日：2012-03-29

申请人： Yoshiyuki Ishihama ,  Ryousuke Asakawa ,  Tsutomu Sakuragi ,  Tetsurou Fukuda ,  Kazuya Sakata ,  Masaru Aoki ,  Kenji Kawagishi ,  Keiichi Yoshimoto

发明人： Yoshiyuki Ishihama ,  Ryousuke Asakawa ,  Tsutomu Sakuragi ,  Tetsurou Fukuda ,  Kazuya Sakata ,  Masaru Aoki ,  Kenji Kawagishi ,  Keiichi Yoshimoto

IPC分类号： C08F210/16 ,  C08F4/6592 ,  C08J5/18 ,  C08L23/08

CPC分类号： C08F210/16 ,  C08F4/65908 ,  C08F4/65912 ,  C08F4/65916 ,  C08F4/65927 ,  C08F10/02 ,  C08J5/18 ,  C08L23/0815 ,  C08L2205/025 ,  C08L2314/06 ,  C08F210/14 ,  C08F2500/04 ,  C08F2500/11 ,  C08F2500/12 ,  C08F2500/17 ,  C08F2500/26 ,  C08F210/08

摘要： An object of the present invention is to provide a polyethylene-based resin composition excellent in the moldability and at the same time, excellent in the balance between impact strength and stiffness as well as in the transparency, and a molded product and a film, which are obtained by the molding of the polyethylene-based resin composition. The polyethylene-based resin composition of the present invention comprises from 41 to 99 wt % of (A) an ethylene-based polymer satisfying specific conditions and from 1 to 59 wt % of (B) an ethylene-based polymer satisfying specific conditions, wherein MFR of the composition as a whole is from 0.05 to 50 g/10 min and the density is from 0.910 to 0.960 g/cm3.

摘要翻译： 本发明的目的是提供一种成型性优异，同时在冲击强度和刚度以及透明性之间的平衡方面优异的聚乙烯类树脂组合物，以及成型体和膜，其中 是通过模塑聚乙烯类树脂组合物得到的。 本发明的聚乙烯类树脂组合物含有（A）满足特定条件的（A）乙烯类聚合物和1〜59重量％（B）满足特定条件的乙烯系聚合物的41〜99重量％，其中， 组合物的总体MFR为0.05〜50g / 10min，密度为0.910〜0.960g / cm 3。

公开(公告)号：US08624244B2

公开(公告)日：2014-01-07

申请号：US13346193

申请日：2012-01-09

申请人： Reiko Noguchi ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

发明人： Reiko Noguchi ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/12 ,  H01L29/76 ,  H01L31/112 ,  H01L29/15

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/41733

摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

摘要翻译： 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

公开(公告)号：US20120305911A1

公开(公告)日：2012-12-06

申请号：US13480980

申请日：2012-05-25

申请人： Toshihiko IWASAKA ,  Kazunori INOUE ,  Masaru AOKI ,  Reiko NOGUCHI

发明人： Toshihiko IWASAKA ,  Kazunori INOUE ,  Masaru AOKI ,  Reiko NOGUCHI

IPC分类号： H01L33/08 ,  H01L33/28

CPC分类号： H01L27/1255 ,  H01L27/1225 ,  H01L27/1288

摘要： Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

摘要翻译： 本发明提供一种薄膜晶体管，其具有设置在半导体膜上的与半导体膜接触的基板，源电极和漏电极的多个部分中的半导体膜，并且彼此间隔开;以及 栅极电极，其经由栅极绝缘膜设置在所述源极电极和所述漏极电极之间; 辅助电容电极，与半导体膜接触地设置在半导体膜上; 在下层具有半导体膜的源极线从源电极延伸; 从栅电极延伸的栅极线; 与漏电极电连接的像素电极; 以及在相邻像素中将辅助电容电极彼此电连接的辅助电容电极连接线。

公开(公告)号：US20120200799A1

公开(公告)日：2012-08-09

申请号：US13450849

申请日：2012-04-19

申请人： Kenichi MIYAMOTO ,  Masami HAYASHI ,  Manabu TANAHARA ,  Masaru AOKI

发明人： Kenichi MIYAMOTO ,  Masami HAYASHI ,  Manabu TANAHARA ,  Masaru AOKI

IPC分类号： G02F1/1339

CPC分类号： G02F1/13394 ,  G02F1/133555

摘要： A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between both substrates over the gap retaining pad and over the pixel electrode.

摘要翻译： 液晶显示装置具有包括透射像素电极和反射像素电极的像素电极。 液晶显示装置包括TFT阵列基板，相对基板，粘合两基板的密封材料，形成在TFT阵列基板上的有机膜，并且具有设置在像素电极下方的厚膜部分和设置在像素电极下方的薄膜部分 厚膜部分，形成在相对基板上并保持两个基板之间的基板间隙的柱状间隔件，以及形成在显示区域外部和密封材料内部的区域中的间隙保持焊盘，以根据 到像素电极上的衬底间隙。 柱形间隔件在间隙保持垫上方和像素电极之间保持两个基板之间的基板间隙。

公开(公告)号：US20120187393A1

公开(公告)日：2012-07-26

申请号：US13346193

申请日：2012-01-09

申请人： Reiko NOGUCHI ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

发明人： Reiko NOGUCHI ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

IPC分类号： H01L33/08

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/41733

摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

摘要翻译： 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

公开(公告)号：US20110017993A1

公开(公告)日：2011-01-27

申请号：US12831658

申请日：2010-07-07

申请人： Kumi TSUDA ,  Kazunori Inoue ,  Masaru Aoki

发明人： Kumi TSUDA ,  Kazunori Inoue ,  Masaru Aoki

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384

摘要： There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.

摘要翻译： 提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分 形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有 平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。

公开(公告)号：US07852521B2

公开(公告)日：2010-12-14

申请号：US11753152

申请日：2007-05-24

申请人： Masaru Aoki

发明人： Masaru Aoki

IPC分类号： H04N1/04 ,  G06K9/40

CPC分类号： H04N1/00681 ,  H04N1/00716 ,  H04N1/00726 ,  H04N1/00734 ,  H04N1/0075 ,  H04N1/00755 ,  H04N1/00779 ,  H04N2201/0082

摘要： The image forming apparatus includes: a reflection LED for emitting light to a surface of a recording medium on which an image is not yet fixed; a transmission LED for emitting light to the back face of the surface of a recording medium on which an image is not yet fixed; a CMOS area sensor for reading, as image, a light irradiation region of the recording medium by the reflection LED or the transmission LED to output the image; and a condition setting mechanism for providing a control by which, in accordance with an output value from the CMOS sensor, a fixing processing condition of a fixing apparatus is set. The image forming apparatus transforms a waveform of the output from the CMOS area sensor to a frequency component to determine, based on the feature quantity of the frequency component, the type of the recording medium.

摘要翻译： 图像形成装置包括：反射LED，用于将光发射到图像尚未固定的记录介质的表面; 用于将光发射到其上尚未固定图像的记录介质的表面的透射LED; 用于通过反射LED或透射LED读取作为图像的记录介质的光照射区域以输出图像的CMOS区域传感器; 以及条件设定机构，用于提供根据CMOS传感器的输出值设定定影装置的定影处理条件的控制。 图像形成装置将来自CMOS区域传感器的输出的波形变换为频率分量，以基于频率分量的特征量来确定记录介质的类型。

公开(公告)号：US20100227987A1

公开(公告)日：2010-09-09

申请号：US12672089

申请日：2008-05-16

申请人： Masaaki Ito ,  Hideshi Uchino ,  Yoshiyuki Ishihama ,  Masaru Aoki ,  Masato Nakano ,  Fusaaki Katou ,  Kazuo Asuka

发明人： Masaaki Ito ,  Hideshi Uchino ,  Yoshiyuki Ishihama ,  Masaru Aoki ,  Masato Nakano ,  Fusaaki Katou ,  Kazuo Asuka

IPC分类号： C08F4/76 ,  C08F110/06 ,  C08F4/42

CPC分类号： C08F10/06 ,  C08F4/65904 ,  C08F4/65912 ,  C08F4/65916 ,  C08F110/06 ,  C08F210/06 ,  Y10S526/943 ,  C08F4/6492 ,  C08F4/65927 ,  C08F2500/15 ,  C08F2500/11 ,  C08F2500/14 ,  C08F2500/12 ,  C08F210/16

摘要： A propylene-based polymer which is suitably applicable to foam molding, sheet molding, blow molding or the like, because of having good flow characteristics, high melt tension, high swell ratio and thus good molding workability.It is attained by a propylene-based polymer or the like characterized by satisfying the following requirements (i) to (vi).Requirement (i): MFR is 0.1 g/10 minutes to 100 g/10 minutes.Requirement (ii): Q value by GPC is 3.5 to 10.5.Requirement (iii): ratio of components with a molecular weight of equal to or higher than 2,000,000, in a molecular weight distribution curve obtained by GPC, is equal to or larger than 0.4% by weight and less than 10% by weight.Requirement (iv): components, which elute at a temperature of equal to or lower than 40° C., are equal to or less than 3.0% by weight, in temperature rising elution fractionation by ODCB.Requirement (v): isotactic triad fraction (mm) measured with 13C-NMR is equal to or higher than 95%.Requirement (vi): strain hardening degree (λmax), in measurement of extensional viscosity, is equal to or higher than 6.0.

摘要翻译： 由于具有良好的流动特性，高熔体张力，高膨胀比和良好的成型加工性，适用于发泡成型，片状成型，吹塑等的丙烯类聚合物。 通过满足以下要求（i）至（vi）的特征在于基于丙烯的聚合物等来实现。 要求（i）：MFR为0.1g / 10分钟至100g / 10分钟。 要求（ii）：GPC的Q值为3.5〜10.5。 要求（iii）：通过GPC获得的分子量分布曲线中分子量等于或高于2,000,000的组分的比例等于或大于0.4重量％且小于10重量％。 要求（iv）：在通过ODCB的升温洗脱分级中，在等于或低于40℃的温度下洗脱的组分等于或小于3.0重量％。 要求（v）：用13 C-NMR测定的全同立构三单元组分数（mm）等于或高于95％。 要求（vi）：在拉伸粘度测定中的应变硬化度（λmax）等于或高于6.0。

公开(公告)号：US07505703B2

公开(公告)日：2009-03-17

申请号：US11555708

申请日：2006-11-02

申请人： Masanori Akita ,  Yoshitaka Kokubo ,  Tomoyuki Okada ,  Kengo Umeda ,  Masaru Aoki

发明人： Masanori Akita ,  Yoshitaka Kokubo ,  Tomoyuki Okada ,  Kengo Umeda ,  Masaru Aoki

IPC分类号： G03G15/00 ,  G03G15/20

CPC分类号： G03G15/5062 ,  G03G15/5029 ,  G03G15/6591 ,  G03G15/6594 ,  G03G2215/00447 ,  G03G2215/00751

摘要： The invention is objected to perform fixing in an optimum fixing condition even with various kinds of recording materials or the like while improving usability by discriminating the kinds of recording materials. An image reading sensor 123 includes a reflective LED 301, a transmissive LED 303 disposed on the opposite side relative to a recording material 304 for detecting the transmitted amount of light, a CMOS area sensor 211, and an imaging lens 1113. The light from the reflective LED 301 as a light source is applied toward the surface of the recording material 304, and the reflected light from the recording material 304 is collected via the lens 303 and an image is formed on the CMOS area sensor 211. The LED 301 is disposed so as to apply LED light to the surface of the recording material 304 diagonally at a predetermined angle.

摘要翻译： 本发明的目的在于即使采用各种记录材料等也能在最佳定影条件下执行定影，同时通过区分记录材料的种类来提高可用性。 图像读取传感器123包括反射LED 301，相对于用于检测透射光量的记录材料304的相对侧的透射型LED 303，CMOS区域传感器211和成像透镜1113。 作为光源的反射型LED301朝向记录材料304的表面施加，并且经由透镜303收集来自记录材料304的反射光，并且在CMOS区域传感器211上形成图像。将LED301设置 以便以预定角度对角地将LED光施加到记录材料304的表面。

公开(公告)号：US20080225131A1

公开(公告)日：2008-09-18

申请号：US12043164

申请日：2008-03-06

申请人： Masaru Aoki

发明人： Masaru Aoki

IPC分类号： H04N5/28

CPC分类号： H04N5/232 ,  G06T7/73

摘要： An image analysis system includes a camera which captures an image of a monitor object, a mirror mounted at a predetermined angle within a visual field of the camera so as to form an image of the monitor object viewed from a direction different from a capturing direction of the camera, and a data processing apparatus which monitors a change in the monitor object by segmenting an image captured by the camera into an image on the mirror and an image except the image on the mirror and separately analyzing the image on the mirror and the image except the image on the mirror. An image analysis method is also disclosed.

摘要翻译： 图像分析系统包括拍摄监视对象的图像的照相机，以相机的视野内的预定角度安装的反射镜，以形成从与拍摄方向不同的方向观察的监视对象的图像 照相机和数据处理装置，其通过将照相机拍摄的图像分割成镜子上的图像和除了镜子上的图像之外的图像来分别监视镜像和图像上的图像来监视监视对象的变化 除了镜子上的图像。 还公开了一种图像分析方法。