公开(公告)号：US20070120265A1

公开(公告)日：2007-05-31

申请号：US11602966

申请日：2006-11-22

申请人： Masayuki Fukumi ,  Alberto Adan

发明人： Masayuki Fukumi ,  Alberto Adan

IPC分类号： H01L23/48

CPC分类号： H01L29/7809 ,  H01L23/481 ,  H01L29/0657 ,  H01L29/0886 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor device comprises at least one first electrode 11b provided on the front surface of a semiconductor chip and electrically connected to at least one of electrodes that constitute a transistor, a second electrode 9 provided on the back surface of the semiconductor chip and electrically connected to one of the other electrodes, a via hole penetrating the semiconductor chip from the front surface to the back surface, and a through electrode 11a a part of which is exposed on the front surface of the semiconductor chip electrically connected to the second electrode 9 through the via hole.

摘要翻译： 半导体器件包括设置在半导体芯片的前表面上并电连接到构成晶体管的电极中的至少一个的至少一个第一电极11b，设置在半导体芯片的背面上的第二电极9并电连接 到另一个电极中的一个，从前表面到后表面穿过半导体芯片的通孔，以及贯穿电极11a，其一部分暴露在与第二电极9电连接的半导体芯片的前表面上 通孔。

公开(公告)号：US06812508B2

公开(公告)日：2004-11-02

申请号：US09993897

申请日：2001-11-27

申请人： Masayuki Fukumi

发明人： Masayuki Fukumi

IPC分类号： H01L27148

CPC分类号： H01L21/764

摘要： A semiconductor substrate device comprises a first semiconductor substrate including a concave-convex surface and a second semiconductor substrate having an insulating film on a surface thereof. The first semiconductor substrate and the second semiconductor substrate are brought together so that the surface of the first semiconductor substrate and the insulating film provided on the surface of the second semiconductor substrate contact each other to form a cavity in the semiconductor substrate device.

摘要翻译： 半导体衬底器件包括具有凹凸表面的第一半导体衬底和在其表面上具有绝缘膜的第二半导体衬底。 将第一半导体衬底和第二半导体衬底组合在一起，使得设置在第二半导体衬底的表面上的第一半导体衬底和绝缘膜的表面彼此接触以在半导体衬底器件中形成空腔。

公开(公告)号：US06294399B1

公开(公告)日：2001-09-25

申请号：US09492329

申请日：2000-01-27

申请人： Masayuki Fukumi ,  Yasumori Fukushima

发明人： Masayuki Fukumi ,  Yasumori Fukushima

IPC分类号： H01L2100

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/06

摘要： A Si protruding portion is formed on a Si substrate by opportunely using the general film forming technique, photolithographic technique and etching technique. A second oxide film is formed to fill up a space between Si protruding portions, and the surface is flattened by the CMP method or the like. Then, the second oxide film is subjected to anisotropic etching to form a Si exposed portion at the top of the Si protruding portion. A Si thin line is made to grow in this Si exposed portion, and then a third oxide film for isolating the Si thin line from the Si substrate is formed through oxidation. A quantum thin line is thus formed at low cost without using any special technique of SOI or the like. Furthermore, the substrate surface is flattened, allowing the formation of a single electron device or a quantum effect device to be easy. The quantum thin line is isolated from the Si substrate by the third oxide film, completely confining the electron. With this arrangement, a quantum thin line that has good substrate surface flatness and is able to form a complete electron confining region is formed by using a semiconductor substrate of a Si substrate or the like.

摘要翻译： 通过适当使用一般的成膜技术，光刻技术和蚀刻技术，在Si衬底上形成Si突出部分。 形成第二氧化物膜以填充Si突出部分之间的空间，并且通过CMP方法等使表面变平。 然后，对第二氧化物膜进行各向异性蚀刻，以在Si突出部分的顶部形成Si暴露部分。 在该Si暴露部分中使Si细线生长，然后通过氧化形成用于将Si细线与Si衬底隔离的第三氧化物膜。 因此，在不使用SOI等的任何特殊技术的情况下，以低成本形成量子细线。 此外，基板表面变平，容易形成单电子器件或量子效应器件。 量子细线通过第三氧化膜与Si衬底隔离，完全限制电子。 通过这种布置，通过使用Si衬底等的半导体衬底形成具有良好的衬底表面平坦度并且能够形成完整的电子约束区域的量子细线。