摘要:
A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.
摘要:
In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is between three-tenths and four-tenths of the array pitch. Between one-fourth and one-half of the surface area of each diode is covered by an electrode making contact with the diode through the window. The distance from the centers of the light-emitting diodes at the ends of the array to the edges of the substrate is between twenty-five and sixty-five hundredths of the array pitch.
摘要:
A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity type are formed in the substrate using the first interlayer dielectric as a diffusion mask. An electrode is formed in contact with each of the impurity diffusion regions. The substrate is separated so that the plurality of chip areas are separated into individual chips. A second interlayer dielectric may be formed on the first interlayer dielectric after forming the impurity diffusion regions. The second interlayer dielectric is formed such that the second interlayer dielectric is absent from a second area along which the substrate is separated into the individual chips, at least in the vicinity of the last one of a plurality of windows. Island-shaped patterns may be formed on the interlayer dielectric so as to hold the interlayer dielectric onto the substrate. The first interlayer dielectric may be removed such that the first interlayer dielectric is absent from the second area, at least in the vicinity of the last one of the plurality of windows.
摘要:
According to the present invention, a plurality of p-type semiconductor layers 13 are formed in a single row and a first layer insulating film 12 having first opening portions 16a and an n-side opening portion 17 is formed on the layers in an n-type semiconductor block 11. On the first layer insulating film 12, p-side electrodes 14 to connect to the p-type semiconductor layers 13 at the first opening portions 16a and an n-side electrode 55 (an n-side contact electrode 55a and an n-side pad electrode 55b) to connect with the n-type semiconductor block 11 at the n-side opening portion 17 are formed. Furthermore, p-side common wirings 4 to connect with specific p-side electrodes 14 are formed via a second layer insulating film 18. The p-side electrodes 14 and the n-side electrode 55 are formed using the same conductive film material through a single film formation and patterning process. An Au alloy film, for instance, may be used to form the conductive film that is to constitute the p-side electrodes 14 and the n-side electrode 55.
摘要:
A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An additional current-conducting area is formed by diffusion of the impurity into the upper layer. An electrode is formed on the substrate, making electrical contact with the current-conducting area, but not covering any part of the light-emitting area. The current-conducting area carries current from the electrode to the light-emitting area.
摘要:
A light-emitting element, or array of light-emitting elements, is formed by diffusion of an impurity into a semiconductor substrate, creating a light-emitting region. Following the diffusion, the surface zone of the light-emitting region, which includes crystal defects caused by the diffusion process, is removed by etching, thereby increasing the light-emitting efficiency by removing nonradiative recombination centers.
摘要:
A method of fabricating an LED array includes forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; patterning the first insulating film by photolithography to form a plurality of first windows; diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; forming a second insulating film on the first insulating film and the plurality of first windows; patterning the second insulating film by photolithography to-remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; forming a metal film on the second insulating film and the plurality of first windows; and patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.
摘要:
A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 .mu.m but not more than 2 .mu.m in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or sensing light, and a wider second region, used for electrode contact. The second regions are located on alternate sides of the array line, permitting a small array pitch to be combined with a large contact area. In a wafer process for fabrication of the chips, a diffusion mask has both windows defining the impurity diffusion regions, and dicing line marks. The dicing line marks are narrowed where they pass adjacent to the windows at the ends of the chip. In the electrode fabrication step, a photomask with an enlarged pattern is used, to allow for misalignment with the diffusion mask.
摘要:
A method of fabricating an LED array includes (a) forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; (b) patterning the first insulating film by photolithography to form a plurality of first windows; (c) diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; (d) forming a second insulating film on the first insulating film and the plurality of first windows; (e) patterning the second insulating film by photolithography to remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; (f) forming a metal film on the second insulating film and the plurality of first windows; and (g) patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.
摘要:
A light emitting element module is provided including a board and plural chips arranged in the form of an array on the board. Each chip includes at least one light emitting element having a light emitting function and/or a photosensing function. The chips are arranged on the board so that the upper surfaces of adjacent chips which are located opposite to the board are positionally displaced in the height direction of the chips by at least the distance corresponding to the thickness of the chips. This uneven chip arrangement in the height direction may be established by alternately arranging thicker chips and thinner chips on the board.