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    PROCESS FOR TRANSFERRING FILMS
    2.
    发明申请
    PROCESS FOR TRANSFERRING FILMS 失效
    传输片的过程

    公开(公告)号：US20090133811A1

    公开(公告)日：2009-05-28

    申请号：US12276125

    申请日：2008-11-21

    申请人： Hubert Moriceau ,  Maurice Couchaud ,  Jean-Luc Deschanvres ,  Anne-Laure Joudrier

    发明人： Hubert Moriceau ,  Maurice Couchaud ,  Jean-Luc Deschanvres ,  Anne-Laure Joudrier

    IPC分类号： B32B38/00 ,  B32B38/10

    CPC分类号： H01F10/24 ,  C30B29/28 ,  C30B31/22 ,  C30B33/06 ,  H01F41/34 ,  H01L21/76254

    摘要： A process of transferring a layer of a first material from a first substrate, having defects in a zone close to the surface, onto a host substrate made of a second material includes a step of thinning the first substrate in order to form a first thinned substrate, an ion or atom implantation in the first substrate in order to form an implantation plane therein, delimiting the layer to be transferred, and a transfer of the layer onto the host substrate by fracturing the substrate along the implantation plane.

    摘要翻译： 将具有靠近表面的区域中的缺陷的第一材料层转移到由第二材料制成的主体衬底上的工艺包括使第一衬底变薄以形成第一薄化衬底的步骤 在第一衬底中的离子或原子注入，以便在其中形成注入平面，限定待转移的层，以及通过沿着注入平面压裂衬底将层转移到主衬底上。

    Process for transferring films
    3.
    发明授权
    Process for transferring films 失效
    转印膜的工艺

    公开(公告)号：US08303745B2

    公开(公告)日：2012-11-06

    申请号：US12276125

    申请日：2008-11-21

    申请人： Hubert Moriceau ,  Maurice Couchaud ,  Jean-Luc Deschanvres ,  Anne-Laure Joudrier

    发明人： Hubert Moriceau ,  Maurice Couchaud ,  Jean-Luc Deschanvres ,  Anne-Laure Joudrier

    IPC分类号： B32B38/10

    CPC分类号： H01F10/24 ,  C30B29/28 ,  C30B31/22 ,  C30B33/06 ,  H01F41/34 ,  H01L21/76254

    摘要： A process of transferring a layer of a first material from a first substrate, having defects in a zone close to the surface, onto a host substrate made of a second material includes a step of thinning the first substrate in order to form a first thinned substrate, an ion or atom implantation in the first substrate in order to form an implantation plane therein, delimiting the layer to be transferred, and a transfer of the layer onto the host substrate by fracturing the substrate along the implantation plane.

    摘要翻译： 将具有靠近表面的区域中的缺陷的第一材料层转移到由第二材料制成的主体衬底上的工艺包括使第一衬底变薄以形成第一薄化衬底的步骤 在第一衬底中的离子或原子注入，以便在其中形成注入平面，限定待转移的层，以及通过沿着注入平面压裂衬底将层转移到主衬底上。

    Method of Producing a Partly or Completely Semi-Insulating or P-Type Doped ZnO Substrate, Substrates Obtained, and Electronic, Electro-Optic or Optoelectronic Devices Comprising Them
    4.
    发明申请
    Method of Producing a Partly or Completely Semi-Insulating or P-Type Doped ZnO Substrate, Substrates Obtained, and Electronic, Electro-Optic or Optoelectronic Devices Comprising Them 失效
    制造部分或全部半绝缘或P型掺杂的ZnO衬底，所获得的衬底以及包括它们的电子，电光或光电器件的方法

    公开(公告)号：US20100200850A1

    公开(公告)日：2010-08-12

    申请号：US12536897

    申请日：2009-08-06

    申请人： Maurice Couchaud ,  Céline Chevalier

    发明人： Maurice Couchaud ,  Céline Chevalier

    IPC分类号： H01L33/02 ,  H01L29/02 ,  H01L29/12 ,  H01L21/04

    CPC分类号： C30B29/16 ,  C30B31/04 ,  H01L21/388 ,  H01L29/227 ,  H01L33/0083

    摘要： Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate from an n-type doped ZnO substrate, in which the n-type doped ZnO substrate is brought into contact with an anhydrous molten salt chosen from anhydrous molten sodium nitrate, lithium nitrate, potassium nitrate and rubidium nitrate.Partly or completely semi-insulating or p-type doped ZnO substrate, said substrate being in particular in the form of a thin layer, film or in the form of nanowires ; and said substrate being doped at the same time by an element chosen from Na, Li, K and Rb; by N; and by O; it being furthermore possible for ZnO or GaN to be epitaxially grown on this substrate.Electronic, optoelectronic or electro-optic device such as a light-emitting diode (LED) comprising this substrate.

    摘要翻译： 从n型掺杂的ZnO衬底生产部分或完全半绝缘或p型掺杂的ZnO衬底的方法，其中n型掺杂的ZnO衬底与无水熔融盐接触，所述无水熔融盐选自无水硝酸钠 ，硝酸锂，硝酸钾和硝酸铷。 部分或完全半绝缘或p型掺杂的ZnO衬底，所述衬底特别是薄层，薄膜或纳米线形式; 并且所述衬底同时被选自Na，Li，K和Rb的元素掺杂; 由N; 和O; 还可以在该衬底上外延生长ZnO或GaN。 电子，光电子或电光器件，例如包括该衬底的发光二极管（LED）。

    Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate, substrates obtained, and electronic, electro-optic or optoelectronic devices comprising them
    5.
    发明授权
    Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate, substrates obtained, and electronic, electro-optic or optoelectronic devices comprising them 失效
    制备部分或完全半绝缘或p型掺杂的ZnO衬底，所获得的衬底以及包括它们的电子，电光或光电器件的方法

    公开(公告)号：US08216926B2

    公开(公告)日：2012-07-10

    申请号：US12536897

    申请日：2009-08-06

    申请人： Maurice Couchaud ,  Céline Chevalier

    发明人： Maurice Couchaud ,  Céline Chevalier

    IPC分类号： H01L21/22 ,  H01L21/38

    CPC分类号： C30B29/16 ,  C30B31/04 ,  H01L21/388 ,  H01L29/227 ,  H01L33/0083

    摘要： Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate from an n-type doped ZnO substrate, in which the n-type doped ZnO substrate is brought into contact with an anhydrous molten salt chosen from anhydrous molten sodium nitrate, lithium nitrate, potassium nitrate and rubidium nitrate. Partly or completely semi-insulating or p-type doped ZnO substrate, said substrate being in particular in the form of a thin layer, film or in the form of nanowires; and said substrate being doped at the same time by an element chosen from Na, Li, K and Rb; by N; and by O; it being furthermore possible for ZnO or GaN to be epitaxially grown on this substrate. Electronic, optoelectronic or electro-optic device such as a light-emitting diode (LED) comprising this substrate.

    摘要翻译： 从n型掺杂的ZnO衬底生产部分或完全半绝缘或p型掺杂的ZnO衬底的方法，其中n型掺杂的ZnO衬底与无水熔融盐接触，所述无水熔融盐选自无水硝酸钠 ，硝酸锂，硝酸钾和硝酸铷。 部分或完全半绝缘或p型掺杂的ZnO衬底，所述衬底特别是薄层，薄膜或纳米线形式; 并且所述衬底同时被选自Na，Li，K和Rb的元素掺杂; 由N; 和O; 还可以在该衬底上外延生长ZnO或GaN。 电子，光电子或电光器件，例如包括该衬底的发光二极管（LED）。

    METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD
    6.
    发明申请
    METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD 审中-公开
    在高温下通过化学活化的亚硫酸盐制备氧化锌（ZnO）的多晶型和单晶的方法和用于实施方法的装置

    公开(公告)号：US20110030611A1

    公开(公告)日：2011-02-10

    申请号：US12937063

    申请日：2009-04-09

    申请人： Jean-Louis Santailler ,  Guy Chichignoud ,  Maurice Couchaud

    发明人： Jean-Louis Santailler ,  Guy Chichignoud ,  Maurice Couchaud

    IPC分类号： C30B23/06 ,  B05D5/12 ,  C23C16/40

    CPC分类号： C30B23/066 ,  C30B23/005 ,  C30B29/16

    摘要： A method for preparing polycrystalline or single-crystal zinc oxide ZnO on a seed placed in an enclosure under a controlled atmosphere, by sublimation of a zinc oxide source placed in a crucible inside the enclosure and distant from the seed, by formation of gas species, transport of gas species, condensation of gas species on the seed, recombination of the ZnO at the surface of the seed, growth of polycrystalline or single-crystal ZnO on the seed, and cooling of the polycrystalline or single-crystal ZnO, wherein: the zinc oxide source is heated by induction at a temperature, a so-called sublimation temperature, from 900 to 1,400° C. under a pressure from 2.10−3 atmospheres to 0.9 atmospheres; CO is generated in situ as a sublimation activator by supplying at least one oxidizing species, or a mixture of an oxidizing species and of at least one inert gas on a solid carbon source placed inside the enclosure; and control of the stoichiometry of the ZnO is achieved by providing a localized supply with controlled flow rate, for example in an amount from 1 SCCM to 100 SCCM, of at least one oxidizing species or of a mixture of at least one oxidizing species and of at least one inert gas, in the vicinity of a growth interface of the ZnO. A device for carrying out the method.

    摘要翻译： 通过形成气体种类，通过放置在封闭体内部并远离种子的坩埚中的氧化锌源的升华，在受控气氛下放置在外壳中的种子上制备多晶或单晶氧化锌ZnO的方法， 气体种类的运输，种子上气体物质的冷凝，种子表面的ZnO的复合，种子上的多晶或单晶ZnO的生长以及多晶或单晶ZnO的冷却，其中： 氧化锌源通过在2.10-3大气压至0.9大气压的压力下在所谓的升华温度，900〜1400℃的温度下进行加热。 通过将至少一种氧化物质或氧化物质和至少一种惰性气体的混合物供应到置于封闭体内部的固体碳源上，CO原位生成作为升华活化剂; 并且ZnO的化学计量的控制通过提供具有受控流速，例如以1SCCM至100SCCM的量的至少一种氧化物质或至少一种氧化物质的混合物的受控流速和 在ZnO的生长界面附近的至少一种惰性气体。 用于执行该方法的装置。