摘要:
The optical information recording medium of the present invention includes an information layer provided on a substrate. The information layer includes: a recording layer with respect to which information can be recorded and reproduced through irradiation with a laser beam having a predetermined wavelength; a first protective layer that is located, with respect to the recording layer, on the side to which the laser beam is incident; and a second protective layer that is located, with respect to the recording layer, on the opposite side to the side to which the laser beam is incident. The refractive index n1 of the first protective layer and the refractive index n2 of the second protective layer at the predetermined wavelength of the laser beam that is used for recording and reproduction satisfy a relationship of n2
摘要:
An optical information recording medium of the present invention includes at least m (m is an integer of 2 or more) information layers, and each of the information layers includes a recording layer that changes irreversibly between a state A and a state B that are optically different from each other. In the case where the m information layers are taken as the first through m-th information layers in the order from a laser beam incidence side, when a recording layer included in the j-th information layer (j is an integer satisfying 1≦j≦m−1) is taken as the j-th recording layer, and when a transmittance of the j-th information layer at the time when the j-th recording layer is in the state A is TAj (%) and a transmittance of the j-th information layer at the time when the j-th recording layer is in the state B is TBj (%), the following relationship is satisfied in the j-th information layer: 0≦|TAj−TBj|/(TAj,TBj)max≦0.10 where (TAj,TBj)max is a larger value of TAj and TBj. Furthermore, at least one recording layer of the first through (m−1)th recording layers is formed of a material having a complex index of refraction (n−ik, where n is a refractive index and k is an extinction coefficient) that is different from that of the m-th recording layer.
摘要:
When manufacturing a write-once recording medium which contains an oxide having a lower oxygen content as a main component, if film formation of a recording layer is performed by introducing a large amount of oxygen into the film forming gas and the sputtering target does not contain oxygen, each medium produced has different properties, because a variation of oxygen flow in the gas easily occurs and the composition ratio of oxygen which is contained in the recording layer easily varies. To solve the problems above, an information recording medium, having at least a recording layer on a substrate and being able to record and reproduce information, contains an oxide A-O or A-O-M (A is a material which contains at least any one of Te, Sb, Ge, Sn, In, Zn, Mo and W, and M is a material which contains at least any one of a metal element, a semi-metal element, and a semiconductor-metal element), and a sputtering target used in the process of producing the layer contains at least A-O and, A and/or M. In this way, a recording layer having high reproducibility and stable properties can be produced, even in a mass production line.
摘要:
An optical information recording medium is provided in which recording can be performed at higher speed with higher density by enabling the cooling power of the recording medium to be improved, the overwritten-mark distortion to be decreased, and an medium with high transmittance to be obtained. The optical information recording medium is formed by laminating, sequentially on a substrate: a protective layer; an interface layer; a recording layer whose optical characteristics are varied reversibly by irradiation of a laser beam; an interface layer; a light transmittance type reflective layer that transmits the laser beam with a wavelength &lgr;; and a thermal diffusion layer. A thickness d of the thermal diffusion layer is set to be within a range of 0
摘要:
An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals (2, 3) that are arranged spaced apart from each other on the substrate and that form respectively raised flat surfaces; a source electrode (4) provided on the raised flat surface formed on one of the pedestals; a drain electrode (5) provided on the raised flat surface formed on the other pedestal; a gate electrode (6) provided on the substrate between the pair of pedestals; and an organic semiconductor layer (7) arranged in contact with the upper surfaces of the source electrode and the drain electrode. The gate electrode and the lower surface of the organic semiconductor layer vertically oppose each other across a gap region (8), and the side surfaces of the pedestals facing the gap region are shaped such that the lower side edges recede apart from the gate electrode with respect to the upper side edges. A contact resistance between the source and drain electrodes and the organic semiconductor layer is reduced, high-speed response performance is enhanced by shortening the channel, and short-circuits between the source and drain electrodes and the gate electrode, which accompany shortening of the channel, can be avoided.
摘要:
An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals (2, 3) that are arranged spaced apart from each other on the substrate and that form respectively raised flat surfaces; a source electrode (4) provided on the raised flat surface formed on one of the pedestals; a drain electrode (5) provided on the raised flat surface formed on the other pedestal; a gate electrode (6) provided on the substrate between the pair of pedestals; and an organic semiconductor layer (7) arranged in contact with the upper surfaces of the source electrode and the drain electrode. The gate electrode and the lower surface of the organic semiconductor layer vertically oppose each other across a gap region (8), and the side surfaces of the pedestals facing the gap region are shaped such that the lower side edges recede apart from the gate electrode with respect to the upper side edges. A contact resistance between the source and drain electrodes and the organic semiconductor layer is reduced, high-speed response performance is enhanced by shortening the channel, and short-circuits between the source and drain electrodes and the gate electrode, which accompany shortening of the channel, can be avoided.
摘要:
At least one information layer including a recording layer contains a material that can exhibit a transition between two optically different states in response to irradiation with a laser beam as a main component is provided on a substrate, and the material is configured so as to exhibit an energy gap ranging from 0.9 eV to 2.0 eV in the amorphous state. The information layer is configured to have a light transmittance of not less than 30% when irradiated with a laser beam having a wavelength ranging from 300 nm to 450 nm. It is possible to achieve excellent recording/reproduction, even if a plurality of recording layers are provided in the recording medium, when this medium is irradiated with a laser beam with a wavelength in the foregoing range from one side of the medium.
摘要:
The present invention provides an optical information medium having excellent weather resistance and repeating characteristics. The optical information medium has a barrier layer between a protective layer and a recording layer. The barrier layer includes GeN or GeON, and at least one element selected from the group consisting of Al, B, Ba, Bi, C, Ca, Ce, Cr, Dy, Eu, Ga, H, In, K, La, Mn, N, Nb, Ni, Pb, Pd, S, Si, Sb, Sn, Ta, Te, Ti, V, W, Yb, Zn and Zr.
摘要:
The present invention provides an optical information recording medium having excellent characteristics in repetitive recording and a sufficient C/N ratio. The optical information recording medium includes a recording layer containing Ge, Te and Sb and a diffusion preventing layers in contact with the recording layer. A composition ratio of Ge, Te and Sb in the recording layer has numerical values which lie within the range represented by the area ABCDE in a ternary phase diagram of Ge, Te and Sb, where the points A, B, C, D and E are as follows: A (Ge50Te50), B (Ge22.5Sb22.0Te55.5), C (Ge17.0Sb41.5Te41.5), D (Ge48.0Sb26.0Te26.0), E (Ge65Te35) The diffusion layer contains at least one compound selected from an oxide, a nitride, a nitrogen oxide, a carbide and a fluoride.
摘要:
An optical information recording medium includes a recording layer that changes reversibly between a crystalline state and an amorphous state. The irradiation of the recording layer with laser beams at a predetermined wavelength changes the recording layer from one selected from the group consisting of the crystalline state and the amorphous state to the other state. The absorptance Ac of the laser beams in the recording layer when the recording layer is in the crystalline state is larger than the absorptance Aa of the laser beams in the recording layer when the recording layer is in the amorphous state. Crystallization accelerating layers for accelerating the change of the recording layer from the amorphous state to the crystalline state are formed in contact with both surfaces of the recording layer.