Abstract:
An electrophoretic display and a method of manufacturing the electrophoretic display are provided. The electrophoretic display includes an lower electrode formed on an under layer, an lower electrode protection layer formed on the lower electrode, an insulating template formed on the lower electrode protection layer and having a plurality of holes of smaller size than the wavelength of visible rays region, a dielectric fluid filling the holes and having a color, a plurality of charged particles suspended in the dielectric fluid filling each of the plurality of holes having a color different from the color of the dielectric fluid, and an upper electrode formed on the insulating template in sequential order. Accordingly, a problem of agglomeration of the charged particles can be solved by the insulating template having holes of smaller size than the wavelength of visible rays region, and thus a reliable electrophoretic display emitting light of one color or natural colors is achieved.
Abstract:
Provided are an apparatus and method using large-area organic vapor phase deposition for formation of organic thin films and organic devices. The apparatus includes a deposition part and a source part. The deposition part includes a process chamber; a substrate holder installed in the process chamber for supporting a loaded substrate; a substrate temperature controller installed in the substrate holder for controlling the temperature of the substrate; and a shower head installed opposite the substrate holder in the process chamber for uniformly distributing onto the substrate organic source vapors to be used for a deposition reaction. The source part includes a source chamber for generating organic source vapors to be supplied to the shower head; a source heater which surrounds the source chamber and allows organic materials to evaporate to be organic source vapors in the source chamber; and a transfer gas supply source for supplying transfer gas that is used to transfer the organic source vapors to the process chamber.
Abstract:
A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.