Template type electrophoretic display and method of manufacturing the same
    1.
    发明申请
    Template type electrophoretic display and method of manufacturing the same 有权
    模板型电泳显示器及其制造方法

    公开(公告)号:US20080007516A1

    公开(公告)日:2008-01-10

    申请号:US11901417

    申请日:2007-09-17

    CPC classification number: G02F1/167

    Abstract: An electrophoretic display and a method of manufacturing the electrophoretic display are provided. The electrophoretic display includes an lower electrode formed on an under layer, an lower electrode protection layer formed on the lower electrode, an insulating template formed on the lower electrode protection layer and having a plurality of holes of smaller size than the wavelength of visible rays region, a dielectric fluid filling the holes and having a color, a plurality of charged particles suspended in the dielectric fluid filling each of the plurality of holes having a color different from the color of the dielectric fluid, and an upper electrode formed on the insulating template in sequential order. Accordingly, a problem of agglomeration of the charged particles can be solved by the insulating template having holes of smaller size than the wavelength of visible rays region, and thus a reliable electrophoretic display emitting light of one color or natural colors is achieved.

    Abstract translation: 提供电泳显示器和制造电泳显示器的方法。 电泳显示器包括形成在下层上的下电极,形成在下电极上的下电极保护层,形成在下电极保护层上的绝缘模板,并且具有比可见光区域的波长小的多个孔 填充所述孔并具有颜色的电介质流体,悬浮在所述介电流体中的多个带电粒子填充所述多个孔中的每一个具有不同于所述介电流体的颜色的颜色;以及形成在所述绝缘模板上的上电极 按顺序排列。 因此,可以通过具有比可见光区域的波长小的孔的绝缘模板来解决带电粒子的聚集问题,从而实现发出一种颜色或自然色的光的可靠的电泳显示。

    Method and apparatus using large-area organic vapor deposition for formation of organic thin films or organic devices
    2.
    发明申请
    Method and apparatus using large-area organic vapor deposition for formation of organic thin films or organic devices 审中-公开
    使用大面积有机气相沉积形成有机薄膜或有机器件的方法和设备

    公开(公告)号:US20050287299A1

    公开(公告)日:2005-12-29

    申请号:US11211111

    申请日:2005-08-23

    CPC classification number: C23C14/228 C23C14/12 C23C14/243

    Abstract: Provided are an apparatus and method using large-area organic vapor phase deposition for formation of organic thin films and organic devices. The apparatus includes a deposition part and a source part. The deposition part includes a process chamber; a substrate holder installed in the process chamber for supporting a loaded substrate; a substrate temperature controller installed in the substrate holder for controlling the temperature of the substrate; and a shower head installed opposite the substrate holder in the process chamber for uniformly distributing onto the substrate organic source vapors to be used for a deposition reaction. The source part includes a source chamber for generating organic source vapors to be supplied to the shower head; a source heater which surrounds the source chamber and allows organic materials to evaporate to be organic source vapors in the source chamber; and a transfer gas supply source for supplying transfer gas that is used to transfer the organic source vapors to the process chamber.

    Abstract translation: 提供了使用大面积有机气相沉积形成有机薄膜和有机器件的装置和方法。 该装置包括沉积部分和源部分。 沉积部分包括处理室; 安装在处理室中用于支撑加载的基板的基板保持架; 衬底温度控制器,其安装在所述衬底保持器中,用于控制所述衬底的温度; 以及在处理室中与衬底保持器相对安装的淋浴喷头,用于均匀地分布到用于沉积反应的衬底上的有机源蒸气。 源部分包括用于产生要供应到淋浴头的有机源蒸气的源室; 源加热器,其围绕源室并且允许有机材料蒸发成为源室中的有机源蒸气; 以及用于供给用于将有机源蒸气输送到处理室的转移气体的转移气体供给源。

    Method of fabricating bottom gate type organic thin film transistor
    3.
    发明申请
    Method of fabricating bottom gate type organic thin film transistor 有权
    底栅型有机薄膜晶体管的制造方法

    公开(公告)号:US20050142496A1

    公开(公告)日:2005-06-30

    申请号:US11009831

    申请日:2004-12-10

    Abstract: A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.

    Abstract translation: 提供一种制造底栅型有机薄膜晶体管的方法。 该方法包括以下动作:在基板上形成栅极导电层图案; 在所述衬底的表面和所述栅极导电层图案的暴露部分上形成栅极绝缘层; 在所述栅极绝缘层上形成源极/漏极,以在所述栅极导电层图案上露出所述栅极绝缘层的表面的一部分; 在所述栅极绝缘层的暴露部分上形成有机半导体薄膜; 在所述有机半导体薄膜上形成暴露所述有机半导体薄膜表面的一部分的钝化层图案; 以及通过使用钝化层图案作为蚀刻掩模蚀刻有机半导体薄膜的暴露表面来形成有机半导体薄膜图案。

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