摘要:
Provided are an apparatus and method using large-area organic vapor phase deposition for formation of organic thin films and organic devices. The apparatus includes a deposition part and a source part. The deposition part includes a process chamber; a substrate holder installed in the process chamber for supporting a loaded substrate; a substrate temperature controller installed in the substrate holder for controlling the temperature of the substrate; and a shower head installed opposite the substrate holder in the process chamber for uniformly distributing onto the substrate organic source vapors to be used for a deposition reaction. The source part includes a source chamber for generating organic source vapors to be supplied to the shower head; a source heater which surrounds the source chamber and allows organic materials to evaporate to be organic source vapors in the source chamber; and a transfer gas supply source for supplying transfer gas that is used to transfer the organic source vapors to the process chamber.
摘要:
An electrophoretic display and a method of manufacturing the electrophoretic display are provided. The electrophoretic display includes an lower electrode formed on an under layer, an lower electrode protection layer formed on the lower electrode, an insulating template formed on the lower electrode protection layer and having a plurality of holes of smaller size than the wavelength of visible rays region, a dielectric fluid filling the holes and having a color, a plurality of charged particles suspended in the dielectric fluid filling each of the plurality of holes having a color different from the color of the dielectric fluid, and an upper electrode formed on the insulating template in sequential order. Accordingly, a problem of agglomeration of the charged particles can be solved by the insulating template having holes of smaller size than the wavelength of visible rays region, and thus a reliable electrophoretic display emitting light of one color or natural colors is achieved.
摘要:
A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.
摘要:
A surface treatment method of an FRP substrate is provided. According to the method, an FRP substrate that is less deformed than a conventional flexible substrate material is used, and surface roughness, which is a drawback of the FRP substrate, is improved so that it may be applied to the fabrication of a device. In order to reduce the surface roughness of an FRP substrate, the FRP substrate is coated with an organic insulating solution and thereby planarized. Due to the reduced deformation and superior flatness, failures occurring due to misalignment in a photolithography process may be prevented.
摘要:
Provided are a color electrophoretic display and a method of manufacturing the same. The color electrophoretic display includes: a plurality of lower electrodes arranged on a lower layer and disposed with a predetermined interval therebetween; a plurality of first to third photoresist chambers arranged on the plurality of lower electrodes; first to third electronic inks accommodated in the plurality of first to third photoresist chambers respectively, and discriminatively operating to an electric field to independently display red, green, and blue colors; and a plurality of upper electrodes disposed with a predetermined interval therebetween and facing the plurality of lower electrodes with the plurality of first to third photoresist chambers being held therebetween.
摘要:
An adhesive film and a method of fabricating a flexible display using the same are provided. The adhesive film includes: a support including a first surface disposed opposite to a flexible substrate for forming an image display element and a second surface disposed opposite to a support substrate for supporting the flexible substrate; a first adhesive material applied on the first surface of the support; and a second adhesive material applied on the second surface of the support and having a greater adhesive strength than the first adhesive material. The flexible substrate can be easily detached from the support substrate, so that the flexible display can be realized in various sizes and thicknesses using existing equipment without modification of mass-production equipment for realizing the flexible display.
摘要:
Provided is a method of manufacturing a thin film transistor (TFT) including a transparent ZnO thin layer that is formed at a low temperature by causing a surface chemical reaction between precursors containing elements constituting the ZnO thin layer. The method includes the steps of: depositing a gate metal layer on a substrate and forming a gate electrode using photolithography and selective etching processes; depositing a gate insulator on the substrate having the gate electrode; forming source and drain electrodes; and depositing a ZnO thin layer on the gate insulator using a surface chemical reaction between precursors containing elements constituting the ZnO thin layer.
摘要:
Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.
摘要:
The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening.
摘要:
A cogeneration system is disclosed, wherein a generator which generates electricity, a drive source which operates to drive the generator, and generates waste heat during the operation of the drive source, a waste heat recoverer which recovers the waste heat of the drive source, and a radiator which radiates the waste heat recovered by the waste heat recoverer are arranged in a single chassis. The cogeneration system has a compact and simple arrangement, and achieves simple control operations, and an enhancement in operability.