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1.发明授权Fet sensor with specially configured gate electrode for the highly sensitive detection of analytes 失效用特殊配置的栅电极对传感器进行高灵敏度的分析物检测公开(公告)号：US07632670B2
公开(公告)日：2009-12-15
申请号：US10499751
申请日：2002-12-14
IPC分类号： C12M1/34
CPC分类号： G01N33/552 , C12Q1/005 , G01N27/4145 , G01N33/5438 , G01N33/551 , G01N2333/904 , G01N2333/908
摘要： Disclosed is a sensor comprising a substrate, a source contact region, a drain contact region, and the gate oxide of a transistor. A gate electrode is disposed between the gate oxide and a detection electrode made of a nonconducting material. The contact area Asens between the gate electrode and the detection electrode is larger than the contact area Agate between the gate electrode and the gate oxide, whereby the receptor can be immobilized on the surface of the detection electrode in a technically simple manner while the small contact area Agate between the gate electrode and the transistor provides for high sensitivity for detecting the analyte. According to the inventive method for detecting at least one analyte, at least one analyte is brought into contact with a receptor immobilized at the detection electrode so as to modify the electrical charge at the surface of the detection electrode. The analyte is detected by detecting the modified voltage in the transistor.
摘要翻译： 公开了一种传感器，其包括晶体管的基板，源极接触区域，漏极接触区域和栅极氧化物。 栅电极设置在栅极氧化物和由不导电材料制成的检测电极之间。 栅电极和检测电极之间的接触面积Asens大于栅电极和栅极氧化物之间的接触面积玛瑙，由此可以以技术上简单的方式将受体固定在检测电极的表面上，同时小接触 栅电极和晶体管之间的区域玛瑙提供了用于检测分析物的高灵敏度。 根据用于检测至少一种分析物的本发明的方法，至少一种分析物与固定在检测电极处的受体接触，以便改变检测电极表面的电荷。 通过检测晶体管中的修改的电压来检测分析物。
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2.发明申请Fet sensor with specially configured gate electrode for the highly sensitive detection of analytes 失效用特殊配置的栅电极对传感器进行高灵敏度的分析物检测公开(公告)号：US20050040483A1
公开(公告)日：2005-02-24
申请号：US10499751
申请日：2002-12-14
IPC分类号： C12Q1/00 , G01N27/414 , G01N33/543 , G01N33/551 , G01N33/552 , H01L29/78 , H01L27/14
CPC分类号： G01N33/552 , C12Q1/005 , G01N27/4145 , G01N33/5438 , G01N33/551 , G01N2333/904 , G01N2333/908
摘要： Disclosed is a sensor comprising a substrate, a source contact region, a drain contact region, and the gate oxide of a transistor. A gate electrode is disposed between the gate oxide and a detection electrode made of a nonconducting material. The contact area Asens between the gate electrode and the detection electrode is larger than the contact area Agate between the gate electrode and the gate oxide, whereby the receptor can be immobilized on the surface of the detection electrode in a technically simple manner while the small contact area Agate between the gate electrode and the transistor provides for high sensitivity for detecting the analyte. According to the inventive method for detecting at least one analyte, at least one analyte is brought into contact with a receptor immobilized at the detection electrode so as to modify the electrical charge at the surface of the detection electrode. The analyte is detected by detecting the modified voltage in the transistor.
摘要翻译： 公开了一种传感器，其包括晶体管的基板，源极接触区域，漏极接触区域和栅极氧化物。 栅电极设置在栅极氧化物和由不导电材料制成的检测电极之间。 栅电极和检测电极之间的接触面积Asens大于栅电极和栅极氧化物之间的接触面积玛瑙，由此可以以技术上简单的方式将受体固定在检测电极的表面上，同时小接触 栅电极和晶体管之间的区域玛瑙提供了用于检测分析物的高灵敏度。 根据用于检测至少一种分析物的本发明的方法，使至少一种分析物与固定在检测电极上的受体接触，以便改变检测电极表面的电荷。 通过检测晶体管中的修改的电压来检测分析物。
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公开(公告)号：US20220248648A1
公开(公告)日：2022-08-11
申请号：US17625677
申请日：2020-07-09
申请人： Mark Bailly , Jesse Senko , Jennifer Blain Christen , Michael Goryll , Stuart Bowden , Christopher Lue Sang
发明人： Mark Bailly , Jesse Senko , Jennifer Blain Christen , Michael Goryll , Stuart Bowden , Christopher Lue Sang
摘要： A fisheries bycatch reduction device is disclosed which may be coupled to or positioned proximate to a net. The device includes a housing and an electrical assembly positioned within the housing. The bycatch reduction device uses a power management strategy to control illumination and charging to create a hassle free, readily deployable substitute for traditional buoys and reduces the unintended catch of non-desired marine life.
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公开(公告)号：US10249741B2
公开(公告)日：2019-04-02
申请号：US14710830
申请日：2015-05-13
IPC分类号： G01N27/414 , H01L29/66 , H01L29/786
摘要： A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).
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5.发明申请System and Method for Ion-Selective, Field Effect Transistor on Flexible Substrate 审中-公开柔性基板上离子选择性场效应晶体管的系统和方法公开(公告)号：US20150330941A1
公开(公告)日：2015-11-19
申请号：US14710830
申请日：2015-05-13
IPC分类号： G01N27/414 , H01L29/66
CPC分类号： H01L29/66969 , G01N27/414 , G01N27/4148 , H01L29/66742 , H01L29/786
摘要： A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).
摘要翻译： 公开了柔性离子选择性场效应晶体管（ISFET）及其制造方法。 所述方法可以包括：（a）用粘合剂将柔性基底附接到刚性支撑件; （b）在柔性基板的表面上形成离子选择性场效应晶体管结构; 和（c）在步骤（b）之后将柔性基材从刚性载体上除去。
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